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Resultados de 1 a 10 de 27  para Produção Intelectual da USP

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Refinado por: autor: Martino, J remover idioma: Inglês remover Proceedings remover
Result Number Material Type Add to My Shelf Action Record Details and Options
1
A simple model for a new SOI MOSFET with asymmetric trapezoidal gate
A simple model for a new SOI MOSFET with asymmetric trapezoidal gate
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

A simple model for a new SOI MOSFET with asymmetric trapezoidal gate

Renato Camargo Giacomini João Antonio Martino 1959-; Workshop IBERSHIP (9. 2003 Havana, Cuba)

Proceedings

Havana 2003

Item não circula. Consulte sua biblioteca.(Acessar)

2
A new SOI MOSFET structure to reduce the parasitic bipolar effect in SOI MOSFETs. (em CD-Rom)
A new SOI MOSFET structure to reduce the parasitic bipolar effect in SOI MOSFETs. (em CD-Rom)
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

A new SOI MOSFET structure to reduce the parasitic bipolar effect in SOI MOSFETs. (em CD-Rom)

Marcelo Antonio Pavanello João Antonio Martino 1959-; Conference of the Brazilian Microelectronics Society (12. 1997 Caxambu)

Proceedings Itajubá : SBMICRO/EFEI, 1997

Itajubá SBMICRO/EFEI 1997

Item não circula. Consulte sua biblioteca.(Acessar)

3
A new method for determination of the fixed charge density at the buried oxide/underlying substrate interface in accumulation-mode P-channel SOI MOSFETs. (em CD-Rom)
A new method for determination of the fixed charge density at the buried oxide/underlying substrate interface in accumulation-mode P-channel SOI MOSFETs. (em CD-Rom)
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

A new method for determination of the fixed charge density at the buried oxide/underlying substrate interface in accumulation-mode P-channel SOI MOSFETs. (em CD-Rom)

João Antonio Martino 1959- Marcelo Antonio Pavanello; Conference of the Brazilian Microelectronics Society (12. 1997 Caxambu)

Proceedings Itajubá : SBMICRO/EFEI, 1997

Itajubá SBMICRO/EFEI 1997

Item não circula. Consulte sua biblioteca.(Acessar)

4
A new method to extract the LDD doping concentration on fully depleted SOI nMOSFET at 300 K
A new method to extract the LDD doping concentration on fully depleted SOI nMOSFET at 300 K
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

A new method to extract the LDD doping concentration on fully depleted SOI nMOSFET at 300 K

Aparecido Sirley Nicolett João Antonio Martino 1959-; Eddy Simoen; Cor Claeys; IEEE International Conference on Devices, Circuits and Syems (3. 2000 Cancun)

Proceedings Piscataway : IEEE, 2000

Piscataway IEEE 2000

Item não circula. Consulte sua biblioteca.(Acessar)

5
Determination of silicon film doping concentration and back interface oxide charge density using SOI-MOS capacitor
Determination of silicon film doping concentration and back interface oxide charge density using SOI-MOS capacitor
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Determination of silicon film doping concentration and back interface oxide charge density using SOI-MOS capacitor

Victor Sonnenberg João Antonio Martino 1959-; International Symposium on Silicon-on-Insulator Technology and Devices (10. 2001 Washington, DC)

Proceedings Pennington : The Electrochemical Society, 2001

Pennington The Electrochemical Society 2001

Item não circula. Consulte sua biblioteca.(Acessar)

6
Components of the leakage current in enhancement-mode SOI nMOSFETs at high temperature. (em CD-Rom)
Components of the leakage current in enhancement-mode SOI nMOSFETs at high temperature. (em CD-Rom)
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Components of the leakage current in enhancement-mode SOI nMOSFETs at high temperature. (em CD-Rom)

Marcello Bellodi João Antonio Martino 1959-; Conference of the Brazilian Microelectronics Society (12. 1997 Caxambu)

Proceedings Itajubá : SBMICRO/EFEI, 1997

Itajubá SBMICRO/EFEI 1997

Item não circula. Consulte sua biblioteca.(Acessar)

7
Influence of the back interface accumulation on the interface traps density extraction in thin film SOI nMOSFET
Influence of the back interface accumulation on the interface traps density extraction in thin film SOI nMOSFET
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Influence of the back interface accumulation on the interface traps density extraction in thin film SOI nMOSFET

Victor Sonnenberg João Antonio Martino 1959-; Conference of the Brazilian Microelectronics Society (12. 1997 Caxambu)

Proceedings Itajubá : SBMICRO/EFEI, 1997

Itajubá SBMICRO/EFEI 1997

Item não circula. Consulte sua biblioteca.(Acessar)

8
Analysis of the series resistance and effective channel lenght extraction of submicron MOS transistors operating at high temperature. (em CD-Rom)
Analysis of the series resistance and effective channel lenght extraction of submicron MOS transistors operating at high temperature. (em CD-Rom)
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Analysis of the series resistance and effective channel lenght extraction of submicron MOS transistors operating at high temperature. (em CD-Rom)

Aparecido Sirley Nicolett João Antonio Martino 1959-; E A Gutierrez; Conference of the Brazilian Microelectronics Society (12. 1997 Caxambu)

Proceedings Itajubá : SBMICRO/EFEI, 1997

Itajubá SBMICRO/EFEI 1997

Item não circula. Consulte sua biblioteca.(Acessar)

9
Influence of the substrate potential drop on fully depleted soi mesfet threshold voltage at 77k
Influence of the substrate potential drop on fully depleted soi mesfet threshold voltage at 77k
Material Type:
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Influence of the substrate potential drop on fully depleted soi mesfet threshold voltage at 77k

Marcelo Antonio Pavanello João Antonio Martino 1959-; Congress of the Brazilian Microelectronics Society (10. 1995 Canela); Ibero-American Microelectronics Conference (1. 1995 Canela)

Proceedings Porto Alegre : Instituto de Informatica da Ufrgs, 1995

Porto Alegre Instituto de Informatica da Ufrgs 1995

Item não circula. Consulte sua biblioteca.(Acessar)

10
Analog circuit design using graded-channel SOI NMOSFETs
Analog circuit design using graded-channel SOI NMOSFETs
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Analog circuit design using graded-channel SOI NMOSFETs

Marcelo Antonio Pavanello João Antonio Martino 1959-; Denis Flandre; Symposium on Integrated Circuits and Systems Design (14. 2001 Campinas)

Proceedings Piscataway : IEEE, 2001

Piscataway IEEE 2001

Item não circula. Consulte sua biblioteca.(Acessar)

Resultados de 1 a 10 de 27  para Produção Intelectual da USP

Ordenado por: Ordenado por: RelevânciaOr hit Enter to replace sort method
Resultados 1 2 3 next page

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