Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Design and optimization of nanowire betavoltaic generatorsWagner, D. L. ; Novog, D. R. ; LaPierre, R. R.Journal of applied physics, 2020-06, Vol.127 (24) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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2 |
Material Type: Artigo
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The Young’s modulus of silica beads/epoxy composites: Experiments and simulationsMonette, L. ; Anderson, M. P. ; Wagner, H. D. ; Mueller, R. R.Journal of applied physics, 1994-02, Vol.75 (3), p.1442-1455 [Periódico revisado por pares]Texto completo disponível |
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3 |
Material Type: Artigo
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Dielectric relaxation and Maxwell-Wagner interface polarization in Nb2O5 doped 0.65BiFeO3–0.35BaTiO3 ceramicsWang, Tong ; Hu, Jiacong ; Yang, Haibo ; Jin, Li ; Wei, Xiaoyong ; Li, Chunchun ; Yan, Fei ; Lin, YingJournal of applied physics, 2017-02, Vol.121 (8) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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4 |
Material Type: Artigo
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Maxwell–Wagner polarization engineering in ferroelectric photovoltaic effectBai, Yulong ; Chen, Yongquan ; Zhang, Lei ; Wang, Junyu ; Chen, Jieyu ; Zhao, ShifengJournal of applied physics, 2022-12, Vol.132 (22) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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5 |
Material Type: Artigo
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Maxwell–Wagner piezoelectric relaxation in ferroelectric heterostructuresDamjanovic, D. ; Demartin Maeder, M. ; Duran Martin, P. ; Voisard, C. ; Setter, N.Journal of applied physics, 2001-12, Vol.90 (11), p.5708-5712 [Periódico revisado por pares]Texto completo disponível |
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6 |
Material Type: Artigo
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The mechanism behind the high radiation tolerance of Fe–Cr alloysAgarwal, S. ; Butterling, M. ; Liedke, M. O. ; Yano, K. H. ; Schreiber, D. K. ; Jones, A. C. L. ; Uberuaga, B. P. ; Wang, Y. Q. ; Chancey, M. ; Kim, H. ; Derby, B. K. ; Li, N. ; Edwards, D. J. ; Hosemann, P. ; Kaoumi, D. ; Hirschmann, E. ; Wagner, A. ; Selim, F. A.Journal of applied physics, 2022-03, Vol.131 (12) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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7 |
Material Type: Artigo
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Impact of nanoscale fluctuations and cap-layer thickness in buried InGaN single quantum wells probed by tip-enhanced Raman scatteringRies, M. ; Poliani, E. ; Nippert, F. ; Seidlitz, D. ; Greif, L. T. H. ; Koslow, I. ; Bläsing, J. ; Auf der Maur, M. ; Hoffmann, A. ; Esser, N. ; Wagner, M. R.Journal of applied physics, 2023-03, Vol.133 (9) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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8 |
Material Type: Artigo
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Influence of the relaxation of Maxwell-Wagner-Sillars polarization and dc conductivity on the dielectric behaviors of nylon 1010Lu, Hongbo ; Zhang, Xingyuan ; Zhang, HuiJournal of applied physics, 2006-09, Vol.100 (5), p.054104-054104-7 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |
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9 |
Material Type: Artigo
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Accurate vertical nanoelectromechanical measurementsProksch, R. ; Wagner, R. ; Lefever, J.Journal of applied physics, 2024-01, Vol.135 (3) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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10 |
Material Type: Artigo
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Analysis of pentacene field-effect transistor with contact resistance as an element of a Maxwell-Wagner effect systemLim, Eunju ; Manaka, Takaaki ; Iwamoto, MitsumasaJournal of applied physics, 2008-09, Vol.104 (5), p.054511-054511-5 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |