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1
Low cost ion implantation technique
Low cost ion implantation technique
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Low cost ion implantation technique

M C Salvadori F S Teixeira; L G Sgubin; W W R Araújo; R E Spirin; E M Oks; K M Yu; I G Brown

Applied Physics Letters v.101, n.22, 2012, p. 224104/1-224104/4

Melville 2012

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2
Powerful continuous-wave sub-terahertz electron maser operating at the 3rd cyclotron harmonic
Powerful continuous-wave sub-terahertz electron maser operating at the 3rd cyclotron harmonic
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Powerful continuous-wave sub-terahertz electron maser operating at the 3rd cyclotron harmonic

Kalynov, Yu. K. ; Manuilov, V. N. ; Fiks, A. Sh ; Zavolskiy, N. A.

Applied physics letters, 2019-05, Vol.114 (21) [Peer Reviewed Journal]

Melville: American Institute of Physics

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3
Sub-20 nm patterning of thin layer WSe2 by scanning probe lithography
Sub-20 nm patterning of thin layer WSe2 by scanning probe lithography
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Sub-20 nm patterning of thin layer WSe2 by scanning probe lithography

Dago, Arancha I. ; Ryu, Yu K. ; Garcia, Ricardo

Applied physics letters, 2016-10, Vol.109 (16) [Peer Reviewed Journal]

Melville: American Institute of Physics

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4
Low-frequency vortex dynamic susceptibility and relaxation in mesoscopic ferromagnetic dots
Low-frequency vortex dynamic susceptibility and relaxation in mesoscopic ferromagnetic dots
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Low-frequency vortex dynamic susceptibility and relaxation in mesoscopic ferromagnetic dots

Guslienko, K. Yu

Applied physics letters, 2006-07, Vol.89 (2), p.022510-022510-3 [Peer Reviewed Journal]

American Institute of Physics

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5
Demonstration of DC Kerr effect induced high nonlinear susceptibility in silicon rich amorphous silicon carbide
Demonstration of DC Kerr effect induced high nonlinear susceptibility in silicon rich amorphous silicon carbide
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Demonstration of DC Kerr effect induced high nonlinear susceptibility in silicon rich amorphous silicon carbide

Chang, Li-Yang Sunny ; Nejadriahi, Hani ; Pappert, Steve ; Yu, Paul K. L.

Applied physics letters, 2022-02, Vol.120 (7) [Peer Reviewed Journal]

Melville: American Institute of Physics

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6
Direct fabrication of thin layer MoS2 field-effect nanoscale transistors by oxidation scanning probe lithography
Direct fabrication of thin layer MoS2 field-effect nanoscale transistors by oxidation scanning probe lithography
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Direct fabrication of thin layer MoS2 field-effect nanoscale transistors by oxidation scanning probe lithography

Espinosa, Francisco M. ; Ryu, Yu K. ; Marinov, Kolyo ; Dumcenco, Dumitru ; Kis, Andras ; Garcia, Ricardo

Applied physics letters, 2015-03, Vol.106 (10) [Peer Reviewed Journal]

Melville: American Institute of Physics

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7
Low-field electron emission from tetrapod-like ZnO nanostructures synthesized by rapid evaporation
Low-field electron emission from tetrapod-like ZnO nanostructures synthesized by rapid evaporation
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Low-field electron emission from tetrapod-like ZnO nanostructures synthesized by rapid evaporation

Wan, Q. ; Yu, K. ; Wang, T. H. ; Lin, C. L.

Applied physics letters, 2003-09, Vol.83 (11), p.2253-2255 [Peer Reviewed Journal]

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8
Unusual properties of the fundamental band gap of InN
Unusual properties of the fundamental band gap of InN
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Unusual properties of the fundamental band gap of InN

Wu, J. ; Walukiewicz, W. ; Yu, K. M. ; Ager, J. W. ; Haller, E. E. ; Lu, Hai ; Schaff, William J. ; Saito, Yoshiki ; Nanishi, Yasushi

Applied physics letters, 2002-05, Vol.80 (21), p.3967-3969 [Peer Reviewed Journal]

United States

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9
Bi-induced band gap reduction in epitaxial InSbBi alloys
Bi-induced band gap reduction in epitaxial InSbBi alloys
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Bi-induced band gap reduction in epitaxial InSbBi alloys

Rajpalke, M. K. ; Linhart, W. M. ; Yu, K. M. ; Birkett, M. ; Alaria, J. ; Bomphrey, J. J. ; Sallis, S. ; Piper, L. F. J. ; Jones, T. S. ; Ashwin, M. J. ; Veal, T. D.

Applied physics letters, 2014-11, Vol.105 (21) [Peer Reviewed Journal]

Melville: American Institute of Physics

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10
Small band gap bowing in In1−xGaxN alloys
Small band gap bowing in In1−xGaxN alloys
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Small band gap bowing in In1−xGaxN alloys

Wu, J. ; Walukiewicz, W. ; Yu, K. M. ; Ager, J. W. ; Haller, E. E. ; Lu, Hai ; Schaff, William J.

Applied physics letters, 2002-06, Vol.80 (25), p.4741-4743 [Peer Reviewed Journal]

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