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1
DIBL behavior of triple gate FinFETs with SEG on biaxial strained devices
DIBL behavior of triple gate FinFETs with SEG on biaxial strained devices
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DIBL behavior of triple gate FinFETs with SEG on biaxial strained devices

Sara Dereste dos Santos Talitha Nicoletti; João Antonio Martino 1959-; Eddy Simoen; Cor Claeys

Microelectronics Technology and Devices - SBMicro 2010 v.31, n.1, p. 51-58, 2010

New Jersey 2010

Item não circula. Consulte sua biblioteca.(Acessar)

2
On the Variability of the Front-/Back-Channel LF Noise in UTBOX SOI nMOSFETs
On the Variability of the Front-/Back-Channel LF Noise in UTBOX SOI nMOSFETs
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On the Variability of the Front-/Back-Channel LF Noise in UTBOX SOI nMOSFETs

Sara Dereste dos Santos Talitha Nicoletti; João Antonio Martino 1959-; Marc Aoulaiche; Anabela Veloso; Malgorzata Jurczak; Eddy Simoen; Cor Claeys

IEEE Transactions on Electron Devices v. 60, n. 1, p. 444-450, Jan 2013

2013

Item não circula. Consulte sua biblioteca.(Acessar)

3
Advantages of different source/drain engineering on scaled UTBOX FDSOI nMOSFETs at high temperature operation
Advantages of different source/drain engineering on scaled UTBOX FDSOI nMOSFETs at high temperature operation
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Advantages of different source/drain engineering on scaled UTBOX FDSOI nMOSFETs at high temperature operation

Talitha Nicoletti Sara Dereste dos Santos; João Antonio Martino 1959-; Marc Aoulaiche; Anabela Veloso; Cor Claeys; Eddy Simoen; Malgorzata Jurczak

Solid-State Electronics v. 91, p. 53-58, Jan 2014

2014

Item não circula. Consulte sua biblioteca.(Acessar)

4
Study of the Main Digital and Analog Parameters of Underlapped MuGFETs
Study of the Main Digital and Analog Parameters of Underlapped MuGFETs
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Study of the Main Digital and Analog Parameters of Underlapped MuGFETs

João Antonio Martino 1959- Sara Dereste dos Santos; Talitha Nicoletti; Marc Aoulaiche; Eddy Simoen; Cor Claeys; Institut d'Électronique; European Workshop on Silicon on Insulator Technology, Devices and Circuits (8. 2012 Montpellier, France)

EuroSoi 2012 VIII Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits Jan. 23-25, Montpellier, France : conference proceedings org. Institut d'Électronique

S.l Institut d'Électronique 2012

Item não circula. Consulte sua biblioteca.(Acessar)

5
Experimental and Simulation of 1T-DRAM Trend with the Gate Length on UTBOX Devices
Experimental and Simulation of 1T-DRAM Trend with the Gate Length on UTBOX Devices
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Experimental and Simulation of 1T-DRAM Trend with the Gate Length on UTBOX Devices

João Antonio Martino 1959- Talitha Nicoletti; Katia Regina Akemi Sasaki; Marc Aoulaiche; Eddy Simoen; Cor Claeys; European Workshop on Silicon on Insulator Technology, Devices and Circuits 2013 Paris, France) (9.

Anais EUROSOI 2013 Paris, 2013

Paris Institut Superieur d'Électronique 2013

Item não circula. Consulte sua biblioteca.(Acessar)

6
The impact of gate length scaling on UTBOX FDSOI devices the digital/analog performance of extension-less structures
The impact of gate length scaling on UTBOX FDSOI devices the digital/analog performance of extension-less structures
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The impact of gate length scaling on UTBOX FDSOI devices the digital/analog performance of extension-less structures

Talitha Nicoletti João Antonio Martino 1959-; S Santos; L Almeida; Marc Aoulaiche; A Veloso; Michael J Jurczak; Eddy Simoen; Cor Claeys; International Conference on Ultimate Integration on Silicon (13th 2012 Grenoble, FR)

Proceedings of the conference Grenoble, 2012

Piscataway IEEE 2012

Item não circula. Consulte sua biblioteca.(Acessar)

7
Comparison between low and high read bias in FB-RAM on UTBOX FDSOI devices
Comparison between low and high read bias in FB-RAM on UTBOX FDSOI devices
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Comparison between low and high read bias in FB-RAM on UTBOX FDSOI devices

Luciano Mendes Almeida João Antonio Martino 1959-; Marc Aoulaiche; Kátia Regina Akemi Sasaki; Talitha Nicoletti; Nadine Collaert; Eddy Simoen; Cor Claeys; Michael J Jurczak; International Conference on Ultimate Integration on Silicon (13th 2012 Grenoble, FR)

Proceedings of the conference Grenoble, 2012

Piscataway IEEE 2012

Item não circula. Consulte sua biblioteca.(Acessar)

8
Spacer length and tilt implantation influence on scaled UTBOX FD MOSFETS
Spacer length and tilt implantation influence on scaled UTBOX FD MOSFETS
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Spacer length and tilt implantation influence on scaled UTBOX FD MOSFETS

Sara Dereste dos Santos Talitha Nicoletti; Marc Aoulaiche; João Antonio Martino 1959-; A Veloso; Malgorzata Jurczak; Eddy Simoen; Cor Claeys; International Symposium on Microelectronics Technology and Devices (27th 2012 Brasilia)

Microelectronics technology and devices, SBMicro Pennington: Electrochemical Society, 2012

Pennington 2012

Item não circula. Consulte sua biblioteca.(Acessar)

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Deste Autor:

  1. Martino, J
  2. Nicoletti, T
  3. Simoen, E
  4. Claeys, C
  5. Aoulaiche, M

Neste Assunto:

  1. Microeletrônica (Congressos)
  2. Circuitos Integrados
  3. Microeletrônica
  4. Silício
  5. Transistores

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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