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1 |
Material Type: Artigo
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Boost up the electrical performance of InGaZnO thin film transistors by inserting an ultrathin InGaZnO:H layerAbliz, Ablat ; Wang, Jingli ; Xu, Lei ; Wan, Da ; Liao, Lei ; Ye, Cong ; Liu, Chuansheng ; Jiang, Changzhong ; Chen, Huipeng ; Guo, TailiangApplied physics letters, 2016-05, Vol.108 (21) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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Material Type: Artigo
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Synthesis and characterization of rare earth doped ZrO{sub 2} nanophosphorsAgrawal, Sadhana ; Dubey, VikasAIP conference proceedings, 2014-10, Vol.1621 (1) [Periódico revisado por pares]United StatesSem texto completo |
3 |
Material Type: Ata de Congresso
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Mo/ller polarimetry with polarized atomic hydrogen at MESAAguar, Bartolomé P ; Aulenbacher, K ; Tyukin, VAIP Conference Proceedings, 2013, Vol.1563 (1), p.246 [Periódico revisado por pares]Melville: American Institute of PhysicsSem texto completo |
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Material Type: Artigo
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Temporal dependence of transient dark counts in an avalanche photodiode: A solution for power-law behavior of afterpulsingAkiba, M. ; Tsujino, K.Applied physics letters, 2016-08, Vol.109 (6) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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Material Type: Artigo
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Stacking of a Low Current Electron Beam in a Harmonic Potential Trap by RF-RepellerAkihiro Mohri, Akihiro Mohri ; Tetsumori Yuyama, Tetsumori Yuyama ; Hitoshi Tanaka, Hitoshi Tanaka ; Hiroyuki Higaki, Hiroyuki Higaki ; Yohei Yamazawa, Yohei Yamazawa ; Toshinori Michishita, Toshinori MichishitaJapanese Journal of Applied Physics, 2000-12, Vol.39 (12R), p.6726 [Periódico revisado por pares]Texto completo disponível |
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Material Type: Artigo
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Auroral-Particle Precipitation and Trapping Caused by Electrostatic Double Layers in the IonosphereAlbert, R. D. ; Lindstrom, P. J.Science (American Association for the Advancement of Science), 1970-12, Vol.170 (3965), p.1398-1401 [Periódico revisado por pares]United States: American Association for the Advancement of ScienceTexto completo disponível |
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Material Type: Artigo
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Detection of minority carrier traps in p-type 4H-SiCAlfieri, G. ; Kimoto, T.Applied physics letters, 2014-03, Vol.104 (9), p.92105 [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
8 |
Material Type: Artigo
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Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)Anand, M. J. ; Ng, G. I. ; Arulkumaran, S. ; Manoj Kumar, C. M. ; Ranjan, K. ; Vicknesh, S. ; Foo, S. C. ; Syamal, B. ; Zhou, X.Applied physics letters, 2015-02, Vol.106 (8) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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Material Type: Ata de Congresso
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Steady-state confinement of non-neutral plasmas using Trivelpiece-Gould modes excited by a 'rotating wall'Anderegg, F. ; Hollmann, E. M. ; Driscoll, C. F.AIP conference proceedings, 1999, Vol.498 (1) [Periódico revisado por pares]United StatesSem texto completo |
10 |
Material Type: Artigo
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Defect level distributions and atomic relaxations induced by charge trapping in amorphous silicaAnderson, Nathan L. ; Pramod Vedula, Ravi ; Schultz, Peter A. ; Ginhoven, R. M. Van ; Strachan, AlejandroApplied physics letters, 2012-04, Vol.100 (17), p.172908-172908-4 [Periódico revisado por pares]United States: American Institute of PhysicsTexto completo disponível |