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Study of the spectral response of CZT multiple-electrode detectors
Study of the spectral response of CZT multiple-electrode detectors
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Ata de Congresso 		Adicionar ao Meu Espaço

Study of the spectral response of CZT multiple-electrode detectors

Abbene, L. ; Del Sordo, S. ; Fauci, F. ; Gerardi, G. ; La Manna, A. ; Raso, G. ; Cola, A. ; Perillo, E. ; Raulo, A. ; Gostilo, V. ; Stumbo, S.

2007 IEEE Nuclear Science Symposium Conference Record, 2007, Vol.2, p.1525-1530

IEEE

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2
Study for the electrical quality degradation of N-channel VDMOSFET transistor induced by electrical stress
Study for the electrical quality degradation of N-channel VDMOSFET transistor induced by electrical stress
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Study for the electrical quality degradation of N-channel VDMOSFET transistor induced by electrical stress

Abboud, N. ; Salame, C. ; Khoury, A. ; Foucaran, A. ; Hoffmann, A. ; Mialhe, P.

2009 International Conference on Advances in Computational Tools for Engineering Applications, 2009, p.142-145

IEEE

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3
Adiabatic coherent quantum tunneling of ultracold atoms trapped in an asymmetrical two-dimensional magnetic lattices
Adiabatic coherent quantum tunneling of ultracold atoms trapped in an asymmetrical two-dimensional magnetic lattices
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Adiabatic coherent quantum tunneling of ultracold atoms trapped in an asymmetrical two-dimensional magnetic lattices

Abdelrahman, A. ; Alamehy, K. ; Hannafordz, P.

2009 6th International Symposium on High Capacity Optical Networks and Enabling Technologies (HONET), 2009, p.120-124

IEEE

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4
Reduction of Bulk Oxide Trapping in poly-Si Gated MOS Capacitors by Fluorination
Reduction of Bulk Oxide Trapping in poly-Si Gated MOS Capacitors by Fluorination
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Reduction of Bulk Oxide Trapping in poly-Si Gated MOS Capacitors by Fluorination

Afanas'ev, V. V. ; de Nijs, J. M. M. ; Balk, P.

ESSDERC '93: 23rd European solid State Device Research Conference, 1993, p.415-418

IEEE

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5
On the transient and steady-state transport of electrons and holes in the MNOS and MONOS devices
On the transient and steady-state transport of electrons and holes in the MNOS and MONOS devices
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On the transient and steady-state transport of electrons and holes in the MNOS and MONOS devices

Agarwal, A.K. ; Chao, C.C. ; Vogel, R.H. ; White, M.H.

1983 International Electron Devices Meeting, 1983, p.400-403

IRE

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6
Light dependent current transport mechanisms in chalcogenide solar cells
Light dependent current transport mechanisms in chalcogenide solar cells
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Light dependent current transport mechanisms in chalcogenide solar cells

Agostinelli, G. ; Dunlop, E.D. ; Batzner, D.L. ; Tiwari, A.N. ; Nollet, P. ; Burgelman, M. ; Kontges, M.

3rd World Conference onPhotovoltaic Energy Conversion, 2003. Proceedings of, 2003, Vol.1, p.356-359 Vol.1

IEEE

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7
Time-dependent dielectric breakdown characteristics of N/sub 2/O oxide under dynamic stressing
Time-dependent dielectric breakdown characteristics of N/sub 2/O oxide under dynamic stressing
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Time-dependent dielectric breakdown characteristics of N/sub 2/O oxide under dynamic stressing

Ahn, J. ; Joshi, A. ; Lo, G.Q. ; Kwong, D.-L.

IEEE electron device letters, 1992-10, Vol.13 (10), p.513-515 [Periódico revisado por pares]

IEEE

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8
Response of Lithium-Drifted Silicon Radiation Detectors to High Energy Charged Particies
Response of Lithium-Drifted Silicon Radiation Detectors to High Energy Charged Particies
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Response of Lithium-Drifted Silicon Radiation Detectors to High Energy Charged Particies

Aitken, D. W. ; Emerson, D. W. ; Zulliger, H. R.

IEEE transactions on nuclear science, 1968-02, Vol.15 (1), p.456-465 [Periódico revisado por pares]

IEEE

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9
A Novel Approach in Separating the Roles of Electrons and Holes in Causing Degradation in Hf-Based MOSFET Devices by Using Stress-Anneal Technique
A Novel Approach in Separating the Roles of Electrons and Holes in Causing Degradation in Hf-Based MOSFET Devices by Using Stress-Anneal Technique
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A Novel Approach in Separating the Roles of Electrons and Holes in Causing Degradation in Hf-Based MOSFET Devices by Using Stress-Anneal Technique

Akbar, M.S. ; Choi, C.H. ; Rhee, S.J. ; Krishnan, S.A. ; Kang, C.Y. ; Zhang, M.H. ; Lee, T. ; Ok, I.J. ; Zhu, F. ; Kim, H.-S. ; Lee, J.C.

IEEE electron device letters, 2007-02, Vol.28 (2), p.132-134 [Periódico revisado por pares]

New York, NY: IEEE

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10
Field acceleration for oxide breakdown-can an accurate anode hole injection model resolve the E vs. 1/E controversy?
Field acceleration for oxide breakdown-can an accurate anode hole injection model resolve the E vs. 1/E controversy?
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Field acceleration for oxide breakdown-can an accurate anode hole injection model resolve the E vs. 1/E controversy?

Alam, M.A. ; Bude, J. ; Ghetti, A.

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059), 2000, p.21-26

IEEE

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