skip to main content
Idioma:
Mostrar Somente
Refinado por: assunto: Electron Traps remover
Result Number Material Type Add to My Shelf Action Record Details and Options
1
Total Ionizing Dose Effect in Tri-gate Silicon Ferroelectric Transistor Memory
Total Ionizing Dose Effect in Tri-gate Silicon Ferroelectric Transistor Memory
Material Type:
Ata de Congresso 		Adicionar ao Meu Espaço

Total Ionizing Dose Effect in Tri-gate Silicon Ferroelectric Transistor Memory

Aabrar, Khandker Akif ; Read, James ; Kirtania, Sharadindu Gopal ; Stepanoff, Sergei ; Wolfe, Douglas E. ; Yu, Shimeng ; Datta, S.

2022 International Electron Devices Meeting (IEDM), 2022, p.32.7.1-32.7.4

IEEE

Sem texto completo

Citações Citado por
2
SAMURAI: An accurate method for modelling and simulating non-stationary Random Telegraph Noise in SRAMs
SAMURAI: An accurate method for modelling and simulating non-stationary Random Telegraph Noise in SRAMs
Material Type:
Ata de Congresso 		Adicionar ao Meu Espaço

SAMURAI: An accurate method for modelling and simulating non-stationary Random Telegraph Noise in SRAMs

Aadithya, K V ; Demir, A ; Venugopalan, S ; Roychowdhury, J

2011 Design, Automation & Test in Europe, 2011, p.1-6

IEEE

Texto completo disponível

Citações Citado por
3
Accurate Prediction of Random Telegraph Noise Effects in SRAMs and DRAMs
Accurate Prediction of Random Telegraph Noise Effects in SRAMs and DRAMs
Material Type:
Artigo 		Adicionar ao Meu Espaço

Accurate Prediction of Random Telegraph Noise Effects in SRAMs and DRAMs

Aadithya, K. V. ; Demir, A. ; Venugopalan, S. ; Roychowdhury, J.

IEEE transactions on computer-aided design of integrated circuits and systems, 2013-01, Vol.32 (1), p.73-86 [Periódico revisado por pares]

IEEE

Texto completo disponível

Citações Citado por
4
MUSTARD: a coupled, stochastic/deterministic, discrete/continuous technique for predicting the impact of random telegraph noise on SRAMs and DRAMs
MUSTARD: a coupled, stochastic/deterministic, discrete/continuous technique for predicting the impact of random telegraph noise on SRAMs and DRAMs
Material Type:
Ata de Congresso 		Adicionar ao Meu Espaço

MUSTARD: a coupled, stochastic/deterministic, discrete/continuous technique for predicting the impact of random telegraph noise on SRAMs and DRAMs

Aadithya, Karthik ; Venogopalan, Sriramkumar ; Demir, Alper ; Roychowdhury, Jaijeet

2011 48th ACM/EDAC/IEEE Design Automation Conference (DAC), 2011, p.292-297

New York, NY, USA: ACM

Texto completo disponível

Citações Citado por
5
Current transient spectroscopy on AlInAs/GaAlInAs heterojunction field effect transistors
Current transient spectroscopy on AlInAs/GaAlInAs heterojunction field effect transistors
Material Type:
Ata de Congresso 		Adicionar ao Meu Espaço

Current transient spectroscopy on AlInAs/GaAlInAs heterojunction field effect transistors

Ababou, S. ; Ducroquet, F. ; Guillot, G. ; Berthier, Ph ; Giraudet, L. ; Praseuth, J. P.

ESSDERC '93: 23rd European solid State Device Research Conference, 1993, p.451-454

IEEE

Texto completo disponível

Citações Citado por
6
Correlation between theory and data for mechanisms leading to dielectric breakdown
Correlation between theory and data for mechanisms leading to dielectric breakdown
Material Type:
Ata de Congresso 		Adicionar ao Meu Espaço

Correlation between theory and data for mechanisms leading to dielectric breakdown

Abadeer, W.W. ; Vollertsen, R.-P. ; Bolam, R.J. ; DiMaria, D.J. ; Cartier, E.

Proceedings of 1994 VLSI Technology Symposium, 1994, p.43-44

IEEE

Texto completo disponível

Citações Citado por
7
Hot Electron Induced Degradation of N-Channel IGFETs
Hot Electron Induced Degradation of N-Channel IGFETs
Material Type:
Ata de Congresso 		Adicionar ao Meu Espaço

Hot Electron Induced Degradation of N-Channel IGFETs

Abbas, S. A. ; Dockerty, R. C.

14th International Reliability Physics Symposium, 1976, p.38-41

IEEE

Sem texto completo

Citações Citado por
8
KMC Simulation of the Electroforming, Set and Reset Processes in Redox-Based Resistive Switching Devices
KMC Simulation of the Electroforming, Set and Reset Processes in Redox-Based Resistive Switching Devices
Material Type:
Artigo 		Adicionar ao Meu Espaço

KMC Simulation of the Electroforming, Set and Reset Processes in Redox-Based Resistive Switching Devices

Abbaspour, Elhameh ; Menzel, Stephan ; Hardtdegen, Alexander ; Hoffmann-Eifert, Susanne ; Jungemann, Christoph

IEEE transactions on nanotechnology, 2018-11, Vol.17 (6), p.1181-1188 [Periódico revisado por pares]

New York: IEEE

Texto completo disponível

Citações Citado por
9
The role of the interface reactions in the electroforming of redox-based resistive switching devices using KMC simulations
The role of the interface reactions in the electroforming of redox-based resistive switching devices using KMC simulations
Material Type:
Ata de Congresso 		Adicionar ao Meu Espaço

The role of the interface reactions in the electroforming of redox-based resistive switching devices using KMC simulations

Abbaspour, Elhameh ; Menzel, Stephan ; Jungemann, Christoph

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2015, p.293-296

IEEE

Sem texto completo

Citações Citado por
10
Random telegraph noise analysis in redox-based resistive switching devices using KMC simulations
Random telegraph noise analysis in redox-based resistive switching devices using KMC simulations
Material Type:
Ata de Congresso 		Adicionar ao Meu Espaço

Random telegraph noise analysis in redox-based resistive switching devices using KMC simulations

Abbaspour, Elhameh ; Menzel, Stephan ; Jungemann, Christoph

2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2017, p.313-316

The Japan Society of Applied Physics

Sem texto completo

Citações Citado por

Personalize Seus Resultados

  1. Editar

Refine Search Results

Expandir Meus Resultados

  1.   

Mostrar Somente

  1. Recursos Online (5.798)
  2. Revistas revisadas por pares (3.076)

Refinar Meus Resultados

Tipo de Recurso 

  1. Anais de Congresso  (3.766)
  2. Artigos  (3.195)
  3. magazinearticle  (79)
  4. Reports  (21)
  5. Standards  (7)
  6. Book Chapters  (7)
  7. Mais opções open sub menu

Data de Publicação 

De até
Refinar
  1. Antes de1963  (40)
  2. 1963Até1977  (309)
  3. 1978Até1992  (982)
  4. 1993Até2008  (2.729)
  5. Após 2008  (3.114)
  6. Mais opções open sub menu

Idioma 

  1. Inglês  (7.059)
  2. Japonês  (676)
  3. Francês  (12)
  4. Russo  (4)
  5. Chinês  (4)
  6. Ucraniano  (1)
  7. Norueguês  (1)
  8. Mais opções open sub menu

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

Buscando em bases de dados remotas. Favor aguardar.