Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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0.4-V logic-library-friendly SRAM array using rectangular-diffusion cell and delta-boosted-array voltage schemeYamaoka, M. ; Osada, K. ; Ishibashi, K.IEEE journal of solid-state circuits, 2004-06, Vol.39 (6), p.934-940 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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2 |
Material Type: Artigo
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041312 前腕伸展・屈曲の単発および連続動作の反応時間(4.運動生理学,一般研究B)関, 博之 ; 古藤, 高良 ; 笠井, 達哉日本体育学会大会号, 1986/10/01, pp.595一般社団法人 日本体育学会Texto completo disponível |
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3 |
Material Type: Artigo
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0.5-V 25-nm 6-T Cell with Boosted Word Voltage for 1-Gb SRAMsKOTABE, Akira ; ITOH, Kiyoo ; TAKEMURA, RiichiroIEICE transactions on electronics, 2012-01, Vol.E95.C (4) [Periódico revisado por pares]Texto completo disponível |
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4 |
Material Type: Artigo
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0.5-V 4-MB Variation-Aware Cache Architecture Using 7T/14T SRAM and Its Testing SchemeNakata, Yohei ; Okumura, Shunsuke ; Kawaguchi, Hiroshi ; Yoshimoto, MasahikoInformation and Media Technologies, 2012, Vol.7(2), pp.544-555Tokyo: Information and Media Technologies Editorial BoardTexto completo disponível |
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5 |
Material Type: Artigo
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0.5-V Low- V CMOS Preamplifier for Low-Power and High-Speed Gigabit-DRAM ArraysKotabe, Akira ; Yanagawa, Yoshimitsu ; Akiyama, Satoru ; Sekiguchi, TomonoriIEEE journal of solid-state circuits, 2010-11, Vol.45 (11), p.2348-2355 [Periódico revisado por pares]IEEETexto completo disponível |
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6 |
Material Type: Ata de Congresso
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0.5-V operation variation-aware word-enhancing cache architecture using 7T/14T hybrid SRAMNakata, Yohei ; Okumura, Shunsuke ; Kawaguchi, Hiroshi ; Yoshimoto, Masahiko2010 ACM/IEEE International Symposium on Low-Power Electronics and Design (ISLPED), 2010, p.219-224IEEETexto completo disponível |
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7 |
Material Type: Artigo
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0.5-V Sub-ns Open-BL SRAM Array with Mid-Point-Sensing Multi-Power-Supply 5T CellShaik, Khaja Ahmad ; Itoh, Kiyoo ; Amara, AmaraIEICE transactions on fundamentals of electronics, communications and computer sciences, 2016-01, Vol.E99.A (2), p.523-530 [Periódico revisado por pares]Texto completo disponível |
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8 |
Material Type: Artigo
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0.77 fJ/bit/search Content Addressable Memory Using Small Match Line Swing and Automated Background Checking Scheme for Variation ToleranceAnh Tuan Do ; Chun Yin ; Velayudhan, Kavitha ; Zhao Chuan Lee ; Kiat Seng Yeo ; Kim, Tony Tae-HyoungIEEE journal of solid-state circuits, 2014-07, Vol.49 (7), p.1487-1498 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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9 |
Material Type: Artigo
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0.8-Numerical-aperture two-element objective lens for the optical diskYAMAMOTO, K ; OSATO, K ; ICHIMURA, I ; MAEDA, F ; WATANABE, TJapanese Journal of Applied Physics, 1997-01, Vol.36 (1B), p.456-459 [Periódico revisado por pares]Tokyo: Japanese journal of applied physicsTexto completo disponível |
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10 |
Material Type: Artigo
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0歳児が語る阪神・淡路大震災:震災学習世代の中間記憶と世代責任高原, 耕平地域安全学会論文集, 2020/11/01, Vol.37, pp.89-96一般社団法人 地域安全学会Texto completo disponível |