Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
---|---|---|---|
1 |
Material Type: Artigo
|
0.11-2.5 GHz All-digital DLL for Mobile Memory Interface with Phase Sampling Window Adaptation to Reduce Jitter Accumulation채주형 ; 김민오 ; 홍기문 ; 박지환 ; 고형준 ; 신우열 ; 지한규 ; 정덕균 ; 김수환JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2017, 17(3), 75, pp.411-424대한전자공학회Texto completo disponível |
|
2 |
Material Type: Artigo
|
0.13-μm 32-Mb/64-Mb embedded DRAM core with high efficient redundancy and enhanced testabilityKikukawa, H. ; Tomishima, S. ; Tsuji, T. ; Kawasaki, T. ; Sakamoto, S. ; Ishikawa, M. ; Abe, W. ; Tanizaki, H. ; Kato, H. ; Uchikoba, T. ; Inokuchi, T. ; Senoh, M. ; Fukushima, Y. ; Nirro, M. ; Maruta, M. ; Shibayama, A. ; Ooishi, T. ; Takahashi, K. ; Hidaka, H.IEEE journal of solid-state circuits, 2002-07, Vol.37 (7), p.932-940 [Periódico revisado por pares]Texto completo disponível |
|
3 |
Material Type: Artigo
|
0.18-μm CMOS equalization techniques for 10-Gb/s fiber optical communication linksMAENG, Moonkyun ; BIEN, Franklin ; HUR, Youngsik ; KIM, Hyoungsoo ; CHANDRAMOULI, Soumya ; GEBARA, Edward ; LASKAR, JoyIEEE transactions on microwave theory and techniques, 2005-11, Vol.53 (11), p.3509-3519 [Periódico revisado por pares]New York, NY: Institute of Electrical and Electronics EngineersTexto completo disponível |
|
4 |
Material Type: Artigo
|
0.18-μm Nondestructive readout FeRAM using charge compensation techniqueKATO, Yoshihisa ; YAMADA, Takayoshi ; SHIMADA, YasuhiroIEEE transactions on electron devices, 2005-12, Vol.52 (12), p.2616-2621 [Periódico revisado por pares]New York, NY: Institute of Electrical and Electronics EngineersTexto completo disponível |
|
5 |
Material Type: Artigo
|
A 0.05-mm2 2.91-nJ/Decision Keyword-Spotting (KWS) Chip Featuring an Always-Retention 5T-SRAM in 28-nm CMOSTan, Fei ; Wei-Han, Yu ; Ka-Fai Un ; Martins, Rui P ; Mak, Pui-InIEEE journal of solid-state circuits, 2024-02, Vol.59 (2), p.626 [Periódico revisado por pares]New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)Texto completo disponível |
|
6 |
Material Type: Artigo
|
A 0.1-1.5 GHz 8-bit Inverter-Based Digital-to-Phase Converter Using Harmonic RejectionMing-Shuan Chen ; Hafez, Amr Amin ; Chih-Kong Ken YangIEEE journal of solid-state circuits, 2013-11, Vol.48 (11), p.2681-2692 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
|
7 |
Material Type: Artigo
|
A 0.1- mu A standby current, ground-bounce-immune 1-Mbit CMOS SRAMAndo, M. ; Okazawa, T. ; Furuta, H. ; Ohkawa, M. ; Monden, J. ; Kodama, N. ; Abe, K. ; Ishihara, H. ; Sasaki, I.IEEE journal of solid-state circuits, 1989-12, Vol.24 (6), p.1708-1713 [Periódico revisado por pares]IEEETexto completo disponível |
|
8 |
Material Type: Artigo
|
A 0.1-μm 1.8-V 256-Mb phase-change random access memory (PRAM) with 66-MHz synchronous burst-read operationKANG, Sangbeom ; WOO YEONG CHO ; YU HWAN RO ; KIM, Suyeon ; HA, Choong-Duk ; KIM, Ki-Sung ; KIM, Young-Ran ; KIM, Du-Eung ; KWAK, Choong-Keun ; BYUN, Hyun-Geun ; JEONG, Gitae ; JEONG, Hongsik ; CHO, Beak-Hyung ; KIM, Kinam ; SHIN, Yunsueng ; LEE, Kwang-Jin ; LEE, Chang-Soo ; OH, Hyung-Rok ; CHOI, Byung-Gil ; QI WANG ; KIM, Hye-Jin ; PARK, Mu-HuiIEEE journal of solid-state circuits, 2007, Vol.42 (1), p.210-218 [Periódico revisado por pares]New York, NY: Institute of Electrical and Electronics EngineersTexto completo disponível |
|
9 |
Material Type: Artigo
|
A 0.13- \mu m CMOS 6 Gb/s/pin Memory Transceiver Using Pseudo-Differential Signaling for Removing Common-Mode Noise Due to SSNHA, Kyung-Soo ; KIM, Lee-Sup ; BAE, Seung-Jun ; PARK, Kwang-Il ; JOO SUN CHOI ; JUN, Young-Hyun ; KIM, KinamIEEE journal of solid-state circuits, 2009-11, Vol.44 (11), p.3146-3162 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
|
10 |
Material Type: Artigo
|
A 0.13-μm 1-GS/s CMOS Discrete-Time FFT Processor for Ultra-Wideband OFDM Wireless ReceiversLEHNE, Mark ; RAMAN, SanjayIEEE transactions on microwave theory and techniques, 2011-06, Vol.59 (6), p.1639-1650 [Periódico revisado por pares]New York, NY: Institute of Electrical and Electronics EngineersTexto completo disponível |