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| Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
|---|---|---|---|
| 1 |
Material Type: Artigo
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0-1 reformulations of the multicommodity capacitated network design problem: Reformulation Techniques and Mathematical ProgrammingFRANGIONI, Antonio ; GENDRON, BernardDiscrete applied mathematics, 2009, Vol.157 (6), p.1229-1241 [Periódico revisado por pares]Kidlington: ElsevierTexto completo disponível |
| 2 |
Material Type: Ata de Congresso
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0.1 μm InGaAs/InAlAs/InP HEMT MMICs: a flight qualified technologyCHOU, Y. C ; LEUNG, D ; LAI, R ; GRUNDBACHER, R ; BARSKY, M ; KAN, Q ; TSAI, RTechnical digest - IEEE Gallium Arsenide Integrated Circuit Symposium, 2002, p.77-80Piscataway NJ: IEEETexto completo disponível |
| 3 |
Material Type: Ata de Congresso
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0.1 μm RFCMOS on high resistivity substrates for system on chip (SOC) applicationsYANG, J.-Y ; BENAISSA, K ; ASHBURN, S ; MADHANI, P ; BLYTHE, T ; SHICHIJO, H ; CRENSHAW, D ; WILLIAMS, B ; SRIDHAR, S ; AI, J ; BOSELLI, G ; ZHAO, S ; TANG, S.-P ; MAHALINGAM, NPiscataway NJ: IEEE 2002Texto completo disponível |
| 4 |
Material Type: Artigo
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0.10 μm graded InGaAs channel InP HEMT with 305 GHz fT and 340 GHz fmaxWojtowicz, M. ; Lai, R. ; Streit, D.C. ; Ng, G.I. ; Block, T.R. ; Tan, K.L. ; Liu, P.H. ; Freudenthal, A.K. ; Dia, R.M.IEEE electron device letters, 1994-11, Vol.15 (11), p.477-479 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
| 5 |
Material Type: Ata de Congresso
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A 0.013 mm2, 5 μW, DC-Coupled Neural Signal Acquisition IC With 0.5 V SupplyMULLER, Rikky ; GAMBINI, Simone ; RABAEY, Jan MIEEE journal of solid-state circuits, 2012, Vol.47 (1), p.232-243 [Periódico revisado por pares]New York, NY: Institute of Electrical and Electronics EngineersTexto completo disponível |
| 6 |
Material Type: Artigo
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A 0.016-mm2 144-μW Three-Stage Amplifier Capable of Driving 1-to-15 nF Capacitive Load With >0.95-MHz GBWZUSHU YAN ; MAK, Pui-In ; LAW, Man-Kay ; MARTINS, Rui PIEEE journal of solid-state circuits, 2013, Vol.48 (2), p.527-540 [Periódico revisado por pares]New York, NY: Institute of Electrical and Electronics EngineersTexto completo disponível |
| 7 |
Material Type: Artigo
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A 0.01―8-GHz (12.5 Gb/s) 4 x 4 CMOS Switch MatrixSHIN, Donghyup ; KANG, Dong-Woo ; REBEIZ, Gabriel MIEEE transactions on microwave theory and techniques, 2012-02, Vol.60 (2), p.381-386 [Periódico revisado por pares]New York, NY: Institute of Electrical and Electronics EngineersTexto completo disponível |
| 8 |
Material Type: Artigo
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A 0.018% THD+N, 88-dB PSRR PWM Class-D Amplifier for Direct Battery HookupCHOI, Youngkil ; TAK, Wonho ; YOON, Younghyun ; ROH, Jeongjin ; KWON, Sunwoo ; KOH, JinseokIEEE journal of solid-state circuits, 2012-02, Vol.47 (2), p.454-463 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
| 9 |
Material Type: Artigo
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A 0.02-mm2 9-Bit 50-MS/s Cyclic ADC in 90-nm Digital CMOS TechnologyHUANG, Yen-Chuan ; LEE, Tai-ChengIEEE journal of solid-state circuits, 2010-03, Vol.45 (3), p.610-619 [Periódico revisado por pares]New York, NY: Institute of Electrical and Electronics EngineersTexto completo disponível |
| 10 |
Material Type: Artigo
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A 0.1-0.3 V 40-123 fJ/bit/ch On-Chip Data Link With ISI-Suppressed Bootstrapped RepeatersHo, Yingchieh ; Su, ChauchinIEEE journal of solid-state circuits, 2012-05, Vol.47 (5), p.1242-1251 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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