Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Novel Attributes of a Dual Material Gate Nanoscale Tunnel Field-Effect TransistorSaurabh, S ; Kumar, M JIEEE transactions on electron devices, 2011-02, Vol.58 (2), p.404-410 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
2 |
Material Type: Artigo
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InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect TransistorsMemisevic, Elvedin ; Svensson, Johannes ; Lind, Erik ; Wernersson, Lars-ErikIEEE transactions on electron devices, 2017-11, Vol.64 (11), p.4746-4751 [Periódico revisado por pares]IEEETexto completo disponível |
3 |
Material Type: Artigo
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Capacitance and Mobility Evaluation for Normally-Off Fully-Vertical GaN FinFETsGribisch, Philipp ; Carrascon, Rosalia Delgado ; Darakchieva, Vanya ; Lind, ErikIEEE transactions on electron devices, 2023-08, Vol.70 (8), p.4101-4107 [Periódico revisado por pares]New York: IEEETexto completo disponível |
4 |
Material Type: Artigo
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Demonstration of L-Shaped Tunnel Field-Effect TransistorsKim, Sang Wan ; Kim, Jang Hyun ; Liu, Tsu-Jae King ; Choi, Woo Young ; Park, Byung-GookIEEE transactions on electron devices, 2016-04, Vol.63 (4), p.1774-1778 [Periódico revisado por pares]New York: IEEETexto completo disponível |
5 |
Material Type: Artigo
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Gate Injection Transistor (GIT)-A Normally-Off AlGaN/GaN Power Transistor Using Conductivity ModulationUemoto, Y. ; Hikita, M. ; Ueno, H. ; Matsuo, H. ; Ishida, H. ; Yanagihara, M. ; Ueda, T. ; Tanaka, T. ; Ueda, D.IEEE transactions on electron devices, 2007-12, Vol.54 (12), p.3393-3399 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
6 |
Material Type: Artigo
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Tuning of Quasi-Vertical GaN FinFETs Fabricated on SiC SubstratesGribisch, Philipp ; Carrascon, Rosalia Delgado ; Darakchieva, Vanya ; Lind, ErikIEEE transactions on electron devices, 2023-05, Vol.70 (5), p.1-7 [Periódico revisado por pares]New York: IEEETexto completo disponível |
7 |
Material Type: Artigo
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Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power TransistorsYuhao Zhang ; Min Sun ; Zhihong Liu ; Piedra, D. ; Hyung-Seok Lee ; Feng Gao ; Fujishima, T. ; Palacios, T.IEEE transactions on electron devices, 2013-07, Vol.60 (7), p.2224-2230 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
8 |
Material Type: Artigo
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AlGaN Channel HEMT With Extremely High Breakdown VoltageNanjo, T. ; Imai, A. ; Suzuki, Y. ; Abe, Y. ; Oishi, T. ; Suita, M. ; Yagyu, E. ; Tokuda, Y.IEEE transactions on electron devices, 2013-03, Vol.60 (3), p.1046-1053 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
9 |
Material Type: Artigo
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Impact of Temperature-Induced Oxide Defects on HfxZr1−xO2 Ferroelectric Tunnel Junction Memristor PerformanceAthle, Robin ; Borg, MattiasIEEE transactions on electron devices, 2023-03, Vol.70 (3), p.1412 [Periódico revisado por pares]Texto completo disponível |
10 |
Material Type: Artigo
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Compact Modeling of Statistical BTI Under Trapping/DetrappingBhaskarr Velamala, Jyothi ; Sutaria, Ketul B. ; Shimizu, Hirofumi ; Awano, Hiromitsu ; Sato, Takashi ; Wirth, Gilson ; Yu CaoIEEE transactions on electron devices, 2013-11, Vol.60 (11), p.3645-3654 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |