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1 |
Material Type: Artigo
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Two-dimensional electron gas density in Al1-x InMx N/AlN/GaN heterostructures (0.03=x=0.23)Gonschorek, M. ; Carlin, J.-F. ; Feltin, E. ; Py, M.A. ; Grandjean, N. ; Darakchieva, Vanya ; Monemar, Bo ; Lorenz, M. ; Ramm, G.Journal of applied physics, 2008, Vol.103 (9), p.093714 [Periódico revisado por pares]Texto completo disponível |
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Material Type: Artigo
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Interfacial chemistry of Alq3 and LiF with reactive metalsMason, M. G. ; Tang, C. W. ; Hung, L.-S. ; Raychaudhuri, P. ; Madathil, J. ; Giesen, D. J. ; Yan, L. ; Le, Q. T. ; Gao, Y. ; Lee, S.-T. ; Liao, L. S. ; Cheng, L. F. ; Salaneck, W. R. ; dos Santos, D. A. ; Brédas, J. L.Journal of applied physics, 2001-03, Vol.89 (5), p.2756-2765 [Periódico revisado por pares]Texto completo disponível |
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Material Type: Artigo
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X-ray magnetic circular dichroism and resonant photomission of V(TCNE)x hybrid magnetsTengstedt, C ; de Jong, M P ; Kanciurzewska, A ; Carlegrim, E ; Fahlman, MPhysical review letters, 2006-02, Vol.96 (5), p.057209-057209, Article 057209 [Periódico revisado por pares]United StatesTexto completo disponível |
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Material Type: Artigo
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Defect distribution in a-plane GaN on Al2 O3Tuomisto, F. ; Paskova, T. ; Kroger, R. ; Figge, S. ; Hommel, D. ; Monemar, Bo ; Kersting, R.Applied physics letters, 2007, Vol.90 (12) [Periódico revisado por pares]Texto completo disponível |
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Material Type: Artigo
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The Origin of the High Conductivity of Poly(3,4-ethylenedioxythiophene)−Poly(styrenesulfonate) (PEDOT−PSS) Plastic ElectrodesCrispin, X ; Jakobsson, F. L. E ; Crispin, A ; Grim, P. C. M ; Andersson, P ; Volodin, A ; van Haesendonck, C ; Van der Auweraer, M ; Salaneck, W. R ; Berggren, MChemistry of materials, 2006-09, Vol.18 (18), p.4354-4360 [Periódico revisado por pares]American Chemical SocietyTexto completo disponível |
6 |
Material Type: Artigo
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Dispersion self-free energies and interaction free energies of finite-sized ions in salt solutionsBoström, Mathias ; Ninham, B.W.Langmuir, 2004-08, Vol.20 (18), p.7569 [Periódico revisado por pares]Texto completo disponível |
7 |
Material Type: Artigo
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Defect-driven inhomogeneities in Ni4H-SiC Schottky barriersTumakha, S. ; Ewing, D.J. ; Porter, L.M. ; Wahab, Qamar Ul ; Ma, X. ; Sudharshan, T.S. ; Brillson, L.J.Applied physics letters, 2005, Vol.87 (24), p.242106 [Periódico revisado por pares]Texto completo disponível |
8 |
Material Type: Artigo
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Magnetron sputter epitaxy of wurtzite Al1-x Inx N (0.1<x<0.9) by dual reactive dc magnetron sputter depositionSeppänen, Timo ; Persson, Per ; Hultman, Lars ; Birch, Jens ; Radnoczi, G.Z.Journal of applied physics, 2005-04, Vol.97 (8), p.083503 [Periódico revisado por pares]Texto completo disponível |
9 |
Material Type: Artigo
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A solid phase reaction between Ti Cx thin films and Al2 O3 substratesPersson, P.O.A. ; Rosen, Johanna ; McKenzie, D.R. ; Bilek, M.M.M. ; Höglund, CarinaJournal of applied physics, 2008, Vol.103 (6) [Periódico revisado por pares]Texto completo disponível |
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Material Type: Artigo
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Photoemission of Alq 3 and C 60 films on Al and LiF/Al substratesJönsson, Stina ; Salaneck, William R ; Fahlman, MatsJournal of applied physics, 2005-07, Vol.98 (1), p.14901 [Periódico revisado por pares]Texto completo disponível |