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Resultados de 1 a 10 de 24  para Produção Intelectual da USP

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1
Analog circuit design using graded-channel SOI NMOSFETs
Analog circuit design using graded-channel SOI NMOSFETs
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Analog circuit design using graded-channel SOI NMOSFETs

Marcelo Antonio Pavanello João Antonio Martino 1959-; Denis Flandre; Symposium on Integrated Circuits and Systems Design (14. 2001 Campinas)

Proceedings Piscataway : IEEE, 2001

Piscataway IEEE 2001

Item não circula. Consulte sua biblioteca.(Acessar)

2
Parasitic bipolar effects in graded-channel fully-depleted silicon-on-insulator nMOSFET
Parasitic bipolar effects in graded-channel fully-depleted silicon-on-insulator nMOSFET
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Parasitic bipolar effects in graded-channel fully-depleted silicon-on-insulator nMOSFET

Marcelo Antonio Pavanello João Antonio Martino 1959-; Denis Flandre; International Conference on Microelectronics and Packaging (15. 2000 Manaus)

SBMicro 2000: proceedings Manaus : SBMicro/UA/UFGRS/UNICAMP/USP, 2000

Manaus SBMicro/UA/UFRGS/UNICAMP/USP 2000

Item não circula. Consulte sua biblioteca.(Acessar)

3
Study of the deep-submicron SOI MOSFET leakage current behavior at high temperatures
Study of the deep-submicron SOI MOSFET leakage current behavior at high temperatures
Material Type:
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Study of the deep-submicron SOI MOSFET leakage current behavior at high temperatures

Marcello Bellodi Benjamin Iniguez; Cristine Raynaud; Denis Flandre; João Antonio Martino 1959-; International Conference on Microelectronics and Packaging (15. 2000 Manaus)

SBMicro 2000: proceedings Manaus : SBMicro/UA/UFGRS/UNICAMP/USP, 2000

Manaus SBMicro/UA/UFRGS/UNICAMP/USP 2000

Item não circula. Consulte sua biblioteca.(Acessar)

4
Design of operational transconductance amplifiers with improved gain by using graded-channel SOI nMOSFETs
Design of operational transconductance amplifiers with improved gain by using graded-channel SOI nMOSFETs
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Design of operational transconductance amplifiers with improved gain by using graded-channel SOI nMOSFETs

Salvador Pinillos Gimenez Marcelo Antonio Pavanello; João Antonio Martino 1959-; S Adriaensen; Denis Flandre; Symposium on Integrated Circuits and Systems Design (16th 2003 São Paulo)

SBCCI 03 : proceedings

Piscataway IEEE Computer Society 2003

Item não circula. Consulte sua biblioteca.(Acessar)

5
Diodes model for the leakage drain current in enhancement-mode SOI nMOSFETs at 300 GRAUS C
Diodes model for the leakage drain current in enhancement-mode SOI nMOSFETs at 300 GRAUS C
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Diodes model for the leakage drain current in enhancement-mode SOI nMOSFETs at 300 GRAUS C

Marcello Bellodi Benjamin Iniguez; Denis Flandre; João Antonio Martino 1959-; International Conference on Microelectronics and Packaging (15. 2000 Manaus)

SBMicro 2000 : proceedings Manaus : SBMicro/UA/UFRGS/UNICAMP/USP, 2000

Manaus SBMicro/UA/UFRGS/UNICAMP/USP 2000

Item não circula. Consulte sua biblioteca.(Acessar)

6
Modeling of the leakage drain current in accumulation mode SOI pMOSFETs for high-temperature applications
Modeling of the leakage drain current in accumulation mode SOI pMOSFETs for high-temperature applications
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Modeling of the leakage drain current in accumulation mode SOI pMOSFETs for high-temperature applications

Marcello Bellodi Benjamin Iniguez; Denis Flandre; João Antonio Martino 1959-; International Symposium on Silicon-on-Insulator Technology and Devices (10. 2001 Washington, DC)

Proceedings Pennington : The Electrochemical Society, 2001

Pennington The Electrochemical Society 2001

Item não circula. Consulte sua biblioteca.(Acessar)

7
High performance current mirrors using graded-channel SOI MOSFETs
High performance current mirrors using graded-channel SOI MOSFETs
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

High performance current mirrors using graded-channel SOI MOSFETs

Marcelo Antonio Pavanello João Antonio Martino 1959-; Denis Flandre; International Symposium on Silicon-on-Insulator Technology and Devices (10. 2001 Washington, DC)

Proceedings Pennington : The Electrochemical Society, 2001

Pennington The Electrochemical Society 2001

Item não circula. Consulte sua biblioteca.(Acessar)

8
Introduction to the soi mosfet dimensions in the high-temperature leakage drain current model
Introduction to the soi mosfet dimensions in the high-temperature leakage drain current model
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Introduction to the soi mosfet dimensions in the high-temperature leakage drain current model

Marcello Bellodi João Antonio Martino 1959-; Denis Flandre; Conference of the Brazilian Microelectronics Society (11. 1996 Águas de Lindóia, SP)

Proceedings São Paulo : Sbmicro, 1996

São Paulo Sbmicro 1996

Item não circula. Consulte sua biblioteca.(Acessar)

9
Comparison of analog performance in conventional and graded-channel fully-depleted SOI MOSFETs
Comparison of analog performance in conventional and graded-channel fully-depleted SOI MOSFETs
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Comparison of analog performance in conventional and graded-channel fully-depleted SOI MOSFETs

Marcelo Antonio Pavanello João Antonio Martino 1959-; Denis Flandre; International Conference on Microelectronics and Packaging (15. 2000 Manaus)

SBMicro 2000: proceedings Manaus : SBMicro/UA/UFGRS/UNICAMP/USP, 2000

Manaus SBMicro/UA/UFRGS/UNICAMP/USP 2000

Item não circula. Consulte sua biblioteca.(Acessar)

10
Low temperature and channel engineering influence on harmonic distortion of soi nmosfets for analog applications
Low temperature and channel engineering influence on harmonic distortion of soi nmosfets for analog applications
Material Type:
Livro 		Adicionar ao Meu Espaço

Low temperature and channel engineering influence on harmonic distortion of soi nmosfets for analog applications

Marcelo Antonio Pavanello Antonio Cerdeira; Miguel A Alemán; João Antonio Martino 1959-; Laurent Vancaillie; Denis Flandre; International Symposium on Silicon-on-Insulator Technology and Devices (12 2005 Quebec, Canada)

Celler,G.K; Cristoloveanu, S.; Gámiz, F.; Fossum, J.G.; Izumi, K. International Symposium on Silicon-on-Insulator Technology and Devices XII: proceedings Pennington: The Electrochemical Society, 2005

Pennington The Electrochemical Society 2005

Item não circula. Consulte sua biblioteca.(Acessar)

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