Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Surface Flattening of GaN by Selective Area Metalorganic Vapor Phase EpitaxyAkasaka, Tetsuya ; Nishida, Toshio ; Ando, Seigo ; Kobayashi, NaokiJapanese Journal of Applied Physics, 1998-07, Vol.37 (7B), p.L842 [Periódico revisado por pares]Texto completo disponível |
2 |
Material Type: Artigo
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Si2H6 doping of InP in gas-source molecular beam epitaxy using triethylindium and phosphineANDO, H ; OKAMOTO, N ; SANDHU, A ; FUJII, TJapanese journal of applied physics, 1991-10, Vol.30 (10A), p.L1696-L1698 [Periódico revisado por pares]Tokyo: Japanese journal of applied physicsTexto completo disponível |
3 |
Material Type: Artigo
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Self-limited facet growth for GaAs tetrahedral quantum dotsANDO, S ; HONDA, T ; KOBAYASHI, NJapanese Journal of Applied Physics, 1993, Vol.32 (1A/B), p.L104-L106 [Periódico revisado por pares]Tokyo: Japanese journal of applied physicsTexto completo disponível |
4 |
Material Type: Artigo
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Novel hexagonal-facet GaAs/AlGaAs laser grown by selective area metalorganic chemical vapour depositionANDO, S ; KOBAYASHI, N ; ANDO, HJapanese Journal of Applied Physics, 1993, Vol.32 (9B), p.L1293-L1296 [Periódico revisado por pares]Tokyo: Japanese journal of applied physicsTexto completo disponível |
5 |
Material Type: Artigo
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Triangular-facet laser with optical waveguides grown by selective area metalorganic chemical vapor depositionANDO, S ; KOBAYASHI, N ; ANDO, HJapanese Journal of Applied Physics, 1996-04, Vol.35 (4A), p.L411-L413 [Periódico revisado por pares]Tokyo: Japanese journal of applied physicsTexto completo disponível |
6 |
Material Type: Artigo
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Triangular-facet lasers coupled by a rectangular optical waveguideANDO, S ; KOBAYASHI, N ; ANDO, HJapanese Journal of Applied Physics, 1997-02, Vol.36 (2A), p.L76-L78 [Periódico revisado por pares]Tokyo: Japanese journal of applied physicsTexto completo disponível |
7 |
Material Type: Artigo
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Hexagonal-facet laser with optical waveguides grown by selective area metalorganic chemical vapor depositionANDO, S ; KOBAYASHI, N ; ANDO, HJapanese Journal of Applied Physics, 1995, Vol.34 (1A), p.L4-L6 [Periódico revisado por pares]Tokyo: Japanese journal of applied physicsTexto completo disponível |
8 |
Material Type: Artigo
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Short-Cavity Fabry-Perot Lasers Using Crystal FacetsAndo, Seigo ; Kobayashi, Naoki ; Ando, HiroakiJapanese Journal of Applied Physics, 1998-02, Vol.37 (2A), p.L105 [Periódico revisado por pares]Texto completo disponível |
9 |
Material Type: Artigo
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Application of HfSiON to Deep-Trench Capacitors of Sub-45-nm-Node Embedded Dynamic Random-Access MemoryAndo, Takashi ; Sato, Naoyuki ; Hiyama, Susumu ; Hirano, Tomoyuki ; Nagaoka, Kojiro ; Abe, Hitoshi ; Okuyama, Atsushi ; Ugajin, Hajime ; Tai, Kaori ; Fujita, Shigeru ; Watanabe, Koji ; Katsumata, Ryota ; Idebuchi, Jun ; Suzuki, Takashi ; Hasegawa, Toshiaki ; Iwamoto, Hayato ; Kadomura, ShingoJapanese Journal of Applied Physics, 2006-04, Vol.45 (4S), p.3165 [Periódico revisado por pares]Texto completo disponível |
10 |
Material Type: Artigo
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High-Speed Atomic Force Microscopy for Studying the Dynamic Behavior of Protein Molecules at WorkAndo, Toshio ; Uchihashi, Takayuki ; Kodera, Noriyuki ; Miyagi, Atsushi ; Nakakita, Ryo ; Yamashita, Hayato ; Sakashita, MitsuruJapanese Journal of Applied Physics, 2006-03, Vol.45 (3S), p.1897 [Periódico revisado por pares]Texto completo disponível |