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0.10 μm TiSi2 technology utilizing nitrogen diffusion controlled RTA
0.10 μm TiSi2 technology utilizing nitrogen diffusion controlled RTA
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0.10 μm TiSi2 technology utilizing nitrogen diffusion controlled RTA

MATSUBARA, Y ; SAKAI, T ; ISHIGAMI, T ; ANDO, K ; HORIUCHI, T

Thin solid films, 1995-12, Vol.270 (1-2), p.537-543 [Periódico revisado por pares]

Lausanne: Elsevier Science

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2
0.8 μm wavelength integrated photoreceiver: improvement using a special hetero-epitaxy suitable for high electron mobility transistor fabrication
0.8 μm wavelength integrated photoreceiver: improvement using a special hetero-epitaxy suitable for high electron mobility transistor fabrication
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0.8 μm wavelength integrated photoreceiver: improvement using a special hetero-epitaxy suitable for high electron mobility transistor fabrication

Gouy, J.P. ; Vilcot, J.P. ; Lorriaux, J.L. ; Raczy, L. ; Decoster, D.

Thin solid films, 1989-05, Vol.172 (1), p.L59-L63 [Periódico revisado por pares]

Lausanne: Elsevier B.V

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3
1 MEV ELECTRON-IRRADIATION INDUCED DEGRADATION OF BORON-DOPED STRAINED SI1-XGEX LAYERS
1 MEV ELECTRON-IRRADIATION INDUCED DEGRADATION OF BORON-DOPED STRAINED SI1-XGEX LAYERS
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1 MEV ELECTRON-IRRADIATION INDUCED DEGRADATION OF BORON-DOPED STRAINED SI1-XGEX LAYERS

VANHELLEMONT, J ; TRAUWAERT, MA ; POORTMANS, J ; CAYMAX, M ; CLAUWS, P

Thin solid films, 1992-12, Vol.222 (1-2), p.166-172 [Periódico revisado por pares]

LAUSANNE 1: Elsevier

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4
1 MHz quartz length extension resonator as a probe for scanning near-field acoustic microscopy
1 MHz quartz length extension resonator as a probe for scanning near-field acoustic microscopy
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1 MHz quartz length extension resonator as a probe for scanning near-field acoustic microscopy

Michels, A. ; Meinen, F. ; Murdfield, T. ; Göhde, W. ; Fischer, U.C. ; Beckmann, E. ; Fuchs, H.

Thin solid films, 1995-08, Vol.264 (2), p.172-175 [Periódico revisado por pares]

Lausanne: Elsevier B.V

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5
(110) Ultrathin GOI layers fabricated by Ge condensation method
(110) Ultrathin GOI layers fabricated by Ge condensation method
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(110) Ultrathin GOI layers fabricated by Ge condensation method

Dissanayake, Sanjeewa ; Shuto, Yusuke ; Sugahara, Satoshi ; Takenaka, Mitsuru ; Takagi, Shinichi

Thin solid films, 2008-11, Vol.517 (1), p.178-180 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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6
(112) and (220)/(204)-oriented CuInSe2 thin films grown by co-evaporation under vacuum
(112) and (220)/(204)-oriented CuInSe2 thin films grown by co-evaporation under vacuum
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(112) and (220)/(204)-oriented CuInSe2 thin films grown by co-evaporation under vacuum

Ruffenach, Sandra ; Robin, Yoann ; Moret, Matthieu ; Aulombard, Roger-Louis ; Briot, Olivier

Thin solid films, 2013-05, Vol.535, p.143-147 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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7
1,2-Dielaidoylphosphocholine/1,2-dimyristoylphosphoglycerol supported phospholipid bilayer formation in calcium and calcium-free buffer
1,2-Dielaidoylphosphocholine/1,2-dimyristoylphosphoglycerol supported phospholipid bilayer formation in calcium and calcium-free buffer
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1,2-Dielaidoylphosphocholine/1,2-dimyristoylphosphoglycerol supported phospholipid bilayer formation in calcium and calcium-free buffer

Evans, Kervin O.

Thin solid films, 2012-01, Vol.520 (7), p.3026-3030 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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8
1,2,4-Triazole as a corrosion inhibitor in copper chemical mechanical polishing
1,2,4-Triazole as a corrosion inhibitor in copper chemical mechanical polishing
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1,2,4-Triazole as a corrosion inhibitor in copper chemical mechanical polishing

Jiang, Liang ; Lan, Yongqing ; He, Yongyong ; Li, Yan ; Li, Yuzhuo ; Luo, Jianbin

Thin solid films, 2014-04, Vol.556, p.395-404 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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9
1.31 μm GaAs-based heterojunction p– i– n photodetectors using InGaAsNSb as the intrinsic layer grown by molecular beam epitaxy
1.31 μm GaAs-based heterojunction p– i– n photodetectors using InGaAsNSb as the intrinsic layer grown by molecular beam epitaxy
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1.31 μm GaAs-based heterojunction p– i– n photodetectors using InGaAsNSb as the intrinsic layer grown by molecular beam epitaxy

Cheah, W.K. ; Fan, W.J. ; Yoon, S.F. ; Zhang, D.H. ; Ng, B.K. ; Loke, W.K. ; Liu, R. ; Wee, A.T.S.

Thin solid films, 2007-03, Vol.515 (10), p.4441-4444 [Periódico revisado por pares]

Lausanne: Elsevier B.V

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10
13C nuclear magnetic resonance signals of Ge/C films deposited from tetraethylgermanium in an r.f. glow discharge
13C nuclear magnetic resonance signals of Ge/C films deposited from tetraethylgermanium in an r.f. glow discharge
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13C nuclear magnetic resonance signals of Ge/C films deposited from tetraethylgermanium in an r.f. glow discharge

Gazicki, M. ; Potrzebowski, M.J. ; Tyczkowski, J. ; Schalko, J.

Thin solid films, 1995-03, Vol.258 (1-2), p.10-13 [Periódico revisado por pares]

Lausanne: Elsevier B.V

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