Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Scanning tunnelling engineeringSchneiker, Conrad ; Hameroff, Stuart ; Voelker, Mark ; He, Jackson ; Dereniak, Eustace ; McCuskey, RobertThe Monthly Microscopical Journal, 1870-03, Vol.3 (3), p.585-596 [Periódico revisado por pares]Oxford, UK: Blackwell Publishing LtdTexto completo disponível |
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2 |
Material Type: Artigo
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Measurement of Activity of Single Molecules of β -D-galactosidaseRotman, BorisProceedings of the National Academy of Sciences - PNAS, 1961-12, Vol.47 (12), p.1981-1991 [Periódico revisado por pares]United States: National Academy of Sciences of the United States of AmericaTexto completo disponível |
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3 |
Material Type: Artigo
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An assessment of the value of triplicated redundancy in digital systemsLongden, M. ; Page, L.J. ; Scantlebury, R.A.Microelectronics and reliability, 1966-01, Vol.5 (1), p.39-55 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
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4 |
Material Type: Artigo
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Quantitative measurements by scanning electron microscopy—I. The use of conductivity mapsThornton, P.R. ; Hughes, K.A. ; Sulway, D.V. ; Wayte, R.C.Microelectronics and reliability, 1966-01, Vol.5 (4), p.291,IN15,293-292,IN16,298 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
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5 |
Material Type: Artigo
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Modern basic concepts in component part reliabilityRyerson, C.M.Microelectronics and reliability, 1966-01, Vol.5 (4), p.239-250 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
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6 |
Material Type: Artigo
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Optical alignment equipment for interconnecting semiconductor integrated circuits at slice levelPrice, T.E.Microelectronics and reliability, 1966-01, Vol.5 (4), p.347,IN27-348,IN28 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
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7 |
Material Type: Artigo
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Integrated high figure of merit monolithic thin-film compatible logic circuits for data processingFuschillo, N. ; Kroboth, J.Microelectronics and reliability, 1966-01, Vol.5 (2), p.145,IN1,149-148,IN6,159 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
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8 |
Material Type: Artigo
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Localized breakdown in Ge mesa diodes due to inclusionsSulway, D.V. ; Davies, I.G. ; Hughes, K.A. ; Thornton, P.R. ; Holeman, B.R.Microelectronics and reliability, 1966-01, Vol.5 (4), p.323,IN21,325-324,IN24,327 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
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9 |
Material Type: Artigo
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The use of equivalent networks to minimize the tolerance of passive thin film circuitsNeuman, M.R. ; Ko, Wen-HsiungMicroelectronics and reliability, 1966-01, Vol.5 (4), p.329-335 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
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10 |
Material Type: Artigo
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The behaviour of electronic components at low operating stress levelsReiche, H.Microelectronics and reliability, 1966-01, Vol.5 (1), p.1-6 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |