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Preparation and characterization of CZTS thin films by vacuum-assisted spray pyrolysis and fabrication of Cd-free heterojunction solar cells
Preparation and characterization of CZTS thin films by vacuum-assisted spray pyrolysis and fabrication of Cd-free heterojunction solar cells
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Preparation and characterization of CZTS thin films by vacuum-assisted spray pyrolysis and fabrication of Cd-free heterojunction solar cells

Aabel, P ; Anupama, A ; Santhosh Kumar, M C

Semiconductor science and technology, 2023-04, Vol.38 (4), p.45010 [Periódico revisado por pares]

IOP Publishing

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2
Devices and desires in the 2-4 mu m region based on antimony-containing III-V heterostructures grown by MOVPE
Devices and desires in the 2-4 mu m region based on antimony-containing III-V heterostructures grown by MOVPE
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Devices and desires in the 2-4 mu m region based on antimony-containing III-V heterostructures grown by MOVPE

Aardvark, A ; Allogho, G G ; Bougnot, G ; David, J P R ; Giani, A ; Haywood, S K ; Hill, G ; Klipstein, P C ; Mansoor, F ; Mason, N J ; Nicholas, R J ; Pascal-Delannoy, F ; Pate, M ; Ponnampalam, L ; Walker, P J

Semiconductor science and technology, 1993-01, Vol.8 (1S), p.S380-S385 [Periódico revisado por pares]

IOP Publishing

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3
Atomic layer deposition of high-permittivity TiO2 dielectrics with low leakage current on RuO2 in TiCl4-based processes
Atomic layer deposition of high-permittivity TiO2 dielectrics with low leakage current on RuO2 in TiCl4-based processes
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Atomic layer deposition of high-permittivity TiO2 dielectrics with low leakage current on RuO2 in TiCl4-based processes

Aarik, Jaan ; Hudec, Boris ; Hušeková, Kristina ; Rammula, Raul ; Kasikov, Aarne ; Arroval, Tõnis ; Uustare, Teet ; Fröhlich, Karol

Semiconductor science and technology, 2012-07, Vol.27 (7) [Periódico revisado por pares]

IOP Publishing

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4
Atomic layer deposition of high-permittivity TiO 2 dielectrics with low leakage current on RuO 2 in TiCl 4 -based processes
Atomic layer deposition of high-permittivity TiO 2 dielectrics with low leakage current on RuO 2 in TiCl 4 -based processes
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Atomic layer deposition of high-permittivity TiO 2 dielectrics with low leakage current on RuO 2 in TiCl 4 -based processes

Aarik, Jaan ; Hudec, Boris ; Hušeková, Kristina ; Rammula, Raul ; Kasikov, Aarne ; Arroval, Tõnis ; Uustare, Teet ; Fröhlich, Karol

Semiconductor science and technology, 2012-07, Vol.27 (7), p.74007 [Periódico revisado por pares]

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5
Optical absorption and determination of band offset in strain-balanced GaInP/InAsP multiple quantum wells grown by low-pressure metalorganic vapour phase epitaxy
Optical absorption and determination of band offset in strain-balanced GaInP/InAsP multiple quantum wells grown by low-pressure metalorganic vapour phase epitaxy
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Optical absorption and determination of band offset in strain-balanced GaInP/InAsP multiple quantum wells grown by low-pressure metalorganic vapour phase epitaxy

Ababou, Y ; Desjardins, P ; Chennouf, A ; Masut, R A ; Yelon, A ; Beaudoin, M ; Bensaada, A ; Leonelli, R ; L'Espérance, G

Semiconductor science and technology, 1997-05, Vol.12 (5), p.550-554 [Periódico revisado por pares]

Bristol: IOP Publishing

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6
Germanium thin film manufacturing using covalent bonding process
Germanium thin film manufacturing using covalent bonding process
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Germanium thin film manufacturing using covalent bonding process

Abadie, K ; Fournel, F ; Morales, C ; Mazen, F ; Vignoud, L ; Colonna, J-P ; Widiez, J

Semiconductor science and technology, 2022-04, Vol.37 (4), p.45012 [Periódico revisado por pares]

IOP Publishing

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7
Domain instability in p-Ge⟨Au⟩ in a nonlinear regime
Domain instability in p-Ge⟨Au⟩ in a nonlinear regime
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Domain instability in p-Ge⟨Au⟩ in a nonlinear regime

Abakarova, N S ; Ibragimov, Kh O ; Aliev, K M ; Kamilov, I K

Semiconductor science and technology, 2001-11, Vol.16 (11), p.909-912 [Periódico revisado por pares]

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8
Domain instability in p-GeAu in a nonlinear regime
Domain instability in p-GeAu in a nonlinear regime
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Domain instability in p-GeAu in a nonlinear regime

Abakarova, N S ; Ibragimov, Kh O ; Aliev, K M ; Kamilov, I K

Semiconductor science and technology, 2001-11, Vol.16, p.909 [Periódico revisado por pares]

IOP Publishing

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9
Domain instability in p-Ge in a nonlinear regime
Domain instability in p-Ge in a nonlinear regime
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Domain instability in p-Ge in a nonlinear regime

ABAKAROVA, N. S ; IBRAGIMOV, Kh O ; ALIEV, K. M ; KAMILOV, I. K

Semiconductor science and technology, 2001, Vol.16 (11), p.909-912 [Periódico revisado por pares]

Bristol: Institute of Physics

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10
Gas mixture influence on the reactive ion etching of InSb in an inductively coupled methane-hydrogen plasma
Gas mixture influence on the reactive ion etching of InSb in an inductively coupled methane-hydrogen plasma
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Gas mixture influence on the reactive ion etching of InSb in an inductively coupled methane-hydrogen plasma

Abautret, J ; Evirgen, A ; Perez, J P ; Laaroussi, Y ; Cordat, A ; Boulard, F ; Christol, P

Semiconductor science and technology, 2015-06, Vol.30 (6), p.65014 [Periódico revisado por pares]

IOP Publishing

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Deste Autor:

  1. Henriques, A
  2. Martino, J
  3. Leite, J
  4. Agopian, P
  5. Gonçalves, L

Neste Assunto:

  1. Physics
  2. Materials Science
  3. Technology
  4. Engineering
  5. Engineering, Electrical & Electronic

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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