Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
---|---|---|---|
1 |
Material Type: Artigo
|
High Performance Low Temperature Polycrystalline Silicon Thin Film Transistors on Non-alkaline Glass Produced Using Diode Pumped Solid State Continuous Wave Laser Lateral CrystallizationHara, Akito ; Takei, Michiko ; Takeuchi, Fumiyo ; Suga, Katsuyuki ; Yoshino, Kenichi ; Chida, Mitsuru ; Kakehi, Tatsuya ; Ebiko, Yoshiki ; Sano, Yasuyuki ; Sasaki, NobuoJapanese Journal of Applied Physics, 2004, Vol.43 (4R), p.1269-1276 [Periódico revisado por pares]Texto completo disponível |
|
2 |
Material Type: Artigo
|
High-Performance Polycrystalline Silicon Thin Film Transistors on Non-Alkali Glass Produced Using Continuous Wave Laser Lateral CrystallizationHara, Akito ; Takeuchi, Fumiyo ; Takei, Michiko ; Suga, Katsuyuki ; Yoshino, Kenichi ; Chida, Mitsuru ; Sano, Yasuyuki ; Sasaki, NobuoJapanese Journal of Applied Physics, 2002-03, Vol.41 (Part 2, No. 3B), p.L311-L313 [Periódico revisado por pares]Texto completo disponível |
|
3 |
Material Type: Artigo
|
Selective Single-Crystalline-Silicon Growth at the Pre-defined Active Region of a Thin Film Transistor on Glass by Using Continuous Wave Laser IrradiationHara, Akito ; Yoshino, Kenichi ; Takeuchi, Fumiyo ; Sasaki, NobuoJapanese Journal of Applied Physics, 2003-01, Vol.42 (Part 1, No. 1), p.23-27 [Periódico revisado por pares]Texto completo disponível |
|
4 |
Material Type: Artigo
|
Micro-Scale Characterization of Crystalline Phase and Stress in Laser-Crystallized Poly-Si Thin Films by Raman SpectroscopyKitahara, Kuninori ; Moritani, Akihiro ; Hara, Akito ; Okabe, MasahiroJapanese Journal of Applied Physics, 1999-11, Vol.38 (11B), p.L1312 [Periódico revisado por pares]Texto completo disponível |
|
5 |
Material Type: Artigo
|
Self-Aligned Metal Double-Gate Low-Temperature Polycrystalline Silicon Thin-Film Transistors on Non-Alkali Glass Substrate Using Diode-Pumped Solid-State Continuous Wave Laser Lateral CrystallizationHara, Akito ; Takei, Michiko ; Yoshino, Kenichi ; Takeuchi, Fumiyo ; Sasaki, NobuoJapanese Journal of Applied Physics, 2004-06, Vol.43 (6B), p.L790 [Periódico revisado por pares]Texto completo disponível |
|
6 |
Material Type: Artigo
|
Control of Nucleation and Solidification Direction of Polycrystalline Silicon by Excimer Laser IrradiationHara, Akito ; Sasaki, NobuoJapanese Journal of Applied Physics, 2000-01, Vol.39 (1A), p.L1 [Periódico revisado por pares]Texto completo disponível |
|
7 |
Material Type: Artigo
|
Nonsteady Flow in Capillary TubesHara, AyakoJapanese Journal of Applied Physics, 2000-03, Vol.39 (3R), p.1437 [Periódico revisado por pares]Texto completo disponível |
|
8 |
Material Type: Artigo
|
Hydrogen-like ultrashallow thermal donors in silicon crystalsHARA, AJapanese Journal of Applied Physics, 1995, Vol.34 (7A), p.3418-3425 [Periódico revisado por pares]Tokyo: Japanese journal of applied physicsTexto completo disponível |
|
9 |
Material Type: Artigo
|
Effects of grown-in hydrogen on lifetime of Czochralski silicon crystalsHARA, AJapanese Journal of Applied Physics, 1995, Vol.34 (10), p.5483-5488 [Periódico revisado por pares]Tokyo: Japanese journal of applied physicsTexto completo disponível |
|
10 |
Material Type: Artigo
|
A New Approach for Form Polycrystalline Silicon by Excimer Laser Irradiation with a Wide Range of EnergiesHara, Akito ; Kitahara, Kuninori ; Nakajima, Kazuo ; Okabe, MasahiroJapanese Journal of Applied Physics, 1999-12, Vol.38 (12R), p.6624 [Periódico revisado por pares]Texto completo disponível |