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1
1.54 mu m photoluminescence of Er-containing N-doped a-Si : H
1.54 mu m photoluminescence of Er-containing N-doped a-Si : H
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Artigo 		Adicionar ao Meu Espaço

1.54 mu m photoluminescence of Er-containing N-doped a-Si : H

Antonio Ricardo Zanatta Luiz Antônio de Oliveira Nunes

Journal of Non-Crystalline Solids Amsterdam v. 230A, p. 389-393, 1998

Amsterdam 1998

Localização: IFSC - Inst. Física de São Carlos    (PROD005296 )(Acessar)

2
1.54 mu m photoluminescence of Er-containing N-doped a-Si : H
1.54 mu m photoluminescence of Er-containing N-doped a-Si : H
Material Type:
Artigo 		Adicionar ao Meu Espaço

1.54 mu m photoluminescence of Er-containing N-doped a-Si : H

Antonio Ricardo Zanatta Luiz Antônio de Oliveira Nunes

Journal of Non-Crystalline Solids Amsterdam v. 230A, p. 389-393, 1998

Amsterdam 1998

Localização: IFSC - Inst. Física de São Carlos    (PROD005296 )(Acessar)

3
1540 nm light emission from Er-doped amorphous GaAsN films
1540 nm light emission from Er-doped amorphous GaAsN films
Material Type:
Artigo 		Adicionar ao Meu Espaço

1540 nm light emission from Er-doped amorphous GaAsN films

Antonio Ricardo Zanatta

Applied Physics Letters College Park v. 75, n. 21, p. 3279-3281, 1999

College Park 1999

Item não circula. Consulte sua biblioteca.(Acessar)

4
1540 nm light emission from Er-doped amorphous GaAsN films
1540 nm light emission from Er-doped amorphous GaAsN films
Material Type:
Artigo 		Adicionar ao Meu Espaço

1540 nm light emission from Er-doped amorphous GaAsN films

Antonio Ricardo Zanatta

Applied Physics Letters College Park v. 75, n. 21, p. 3279-3281, 1999

College Park 1999

Item não circula. Consulte sua biblioteca.(Acessar)

5
AIN aloys prepared by reactive radio frequency sputtering
AIN aloys prepared by reactive radio frequency sputtering
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

AIN aloys prepared by reactive radio frequency sputtering

C. T. M. Ribeiro F Alvarez; Antonio Ricardo Zanatta; Encontro Nacional de Física da Matéria Condensada (24. 2001 São Lourenço)

Resumos São Paulo : SBF, 2001

São Paulo SBF 2001

Localização: IFSC - Inst. Física de São Carlos    (PROD007242 ) e outros locais(Acessar)

6
An alternative experimental approach to produce rare-earth-doped SiOx films
An alternative experimental approach to produce rare-earth-doped SiOx films
Material Type:
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An alternative experimental approach to produce rare-earth-doped SiOx films

Antonio Ricardo Zanatta

Journal of Applied Physics College Park : American Institute of Physics - AIP v. 119, n. 14, p. 145302-1-145302-5, Apr. 2016

College Park 2016

Localização: IFSC - Inst. Física de São Carlos    (PROD024786 )(Acessar)

7
Coexistence of Sm3+ and Sm2+ ions in amorphous SiOx origin, main light emission lines and excitation-recombination mechanisms
Coexistence of Sm3+ and Sm2+ ions in amorphous SiOx origin, main light emission lines and excitation-recombination mechanisms
Material Type:
Artigo 		Adicionar ao Meu Espaço

Coexistence of Sm3+ and Sm2+ ions in amorphous SiOx origin, main light emission lines and excitation-recombination mechanisms

Antonio Ricardo Zanatta

Optical Materials Express Washington, DC: Optical Society of America - OSA v. 6, n. 6, p. 2108-2117, May 2016

Washington, DC 2016

Localização: IFSC - Inst. Física de São Carlos    (PROD024820 )(Acessar)

8
Direct and host mediated excitation of 'Er POT.3+' ions in amorphous SiN alloys
Direct and host mediated excitation of 'Er POT.3+' ions in amorphous SiN alloys
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Direct and host mediated excitation of 'Er POT.3+' ions in amorphous SiN alloys

Maria José Valenzuela Bell Luiz Antônio de Oliveira Nunes; Antonio Ricardo Zanatta; Encontro Nacional de Física da Matéria Condensada (22. 1999 São Lourenço)

Resumos São Paulo: Sociedade Brasileira de Física, 1999

São Paulo Sociedade Brasileira de Física 1999

Localização: IFSC - Inst. Física de São Carlos    (PROD005982 ) e outros locais(Acessar)

9
Effects of Si'H IND.2''Cl IND.2' on the deposition and properties of amorphous and microcrystalline silicon fabricated from very high frequency glow discharges
Effects of Si'H IND.2''Cl IND.2' on the deposition and properties of amorphous and microcrystalline silicon fabricated from very high frequency glow discharges
Material Type:
Artigo 		Adicionar ao Meu Espaço

Effects of Si'H IND.2''Cl IND.2' on the deposition and properties of amorphous and microcrystalline silicon fabricated from very high frequency glow discharges

M. Mulato S Wagner; Antonio Ricardo Zanatta

Journal of the Electrochemical Society Pennington v. 147, n. 5, p. 1829-1834, 2000

Pennington 2000

Item não circula. Consulte sua biblioteca.(Acessar)

10
Effects of Si'H IND.2''Cl IND.2' on the deposition and properties of amorphous and microcrystalline silicon fabricated from very high frequency glow discharges
Effects of Si'H IND.2''Cl IND.2' on the deposition and properties of amorphous and microcrystalline silicon fabricated from very high frequency glow discharges
Material Type:
Artigo 		Adicionar ao Meu Espaço

Effects of Si'H IND.2''Cl IND.2' on the deposition and properties of amorphous and microcrystalline silicon fabricated from very high frequency glow discharges

M. Mulato S Wagner; Antonio Ricardo Zanatta

Journal of the Electrochemical Society Pennington v. 147, n. 5, p. 1829-1834, 2000

Pennington 2000

Item não circula. Consulte sua biblioteca.(Acessar)

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