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Carrier dynamics at surface and interface in hydrogenated amorphous silicon observed by the transient grating method
Carrier dynamics at surface and interface in hydrogenated amorphous silicon observed by the transient grating method
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Carrier dynamics at surface and interface in hydrogenated amorphous silicon observed by the transient grating method

KOMURO, S ; AOYAGI, Y ; SEGAWA, Y ; NAMBA, S ; MASUYAMA, A ; OKAMOTO, H ; HAMAKAWA, Y

Applied physics letters, 1983-11, Vol.43 (10), p.968-970 [Periódico revisado por pares]

Melville, NY: American Institute of Physics

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2
Steady-state and time-resolved photoluminescence in microcrystalline silicon
Steady-state and time-resolved photoluminescence in microcrystalline silicon
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Steady-state and time-resolved photoluminescence in microcrystalline silicon

KOMURO, S ; AOYAGI, Y ; SEGAWA, Y ; NAMBA, S ; MASUYAMA, A ; KRUANGAM, D ; OKAMOTO, H ; HAMAKAWA, Y

Journal of applied physics, 1985-01, Vol.58 (2), p.943-947 [Periódico revisado por pares]

Woodbury, NY: American Institute of Physics

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3
Control of π-radical anion state of porphyrin with a polymer matrix
Control of π-radical anion state of porphyrin with a polymer matrix
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Control of π-radical anion state of porphyrin with a polymer matrix

SEGAWA, H ; SHIMIDZU, T ; HONDA, K.-I

Polymer journal, 1988-01, Vol.20 (6), p.441-446 [Periódico revisado por pares]

Tokyo: Society of Polymer Science

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4
A novel photo-sensitized polymerization of pyrrole
A novel photo-sensitized polymerization of pyrrole
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A novel photo-sensitized polymerization of pyrrole

SEGAWA, H ; SHIMIDZU, T ; HONDA, K

Journal of the Chemical Society. Chemical communications, 1989 (2), p.132-133

Cambridge: Royal Society of Chemistry

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5
One-dimensional donor-acceptor polymer: Phosphorus porphyrins linked with molecular wire
One-dimensional donor-acceptor polymer: Phosphorus porphyrins linked with molecular wire
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One-dimensional donor-acceptor polymer: Phosphorus porphyrins linked with molecular wire

Segawa, H. ; Nakayama, N. ; Wu, F. ; Shimidzu, T.

Synthetic metals, 1993-03, Vol.55 (2), p.966-971 [Periódico revisado por pares]

Lausanne: Elsevier B.V

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6
Epitaxial growth and magnetic properties of Fe(211)
Epitaxial growth and magnetic properties of Fe(211)
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Epitaxial growth and magnetic properties of Fe(211)

YAEGASHI, S ; KURIHARA, T ; SEGAWA, H

Journal of applied physics, 1993-10, Vol.74 (7), p.4506-4512 [Periódico revisado por pares]

Woodbury, NY: American Institute of Physics

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7
Quarter-micrometer SPI (Self-aligned Pocket Implantation) MOSFET's and its application for low supply voltage operation
Quarter-micrometer SPI (Self-aligned Pocket Implantation) MOSFET's and its application for low supply voltage operation
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Quarter-micrometer SPI (Self-aligned Pocket Implantation) MOSFET's and its application for low supply voltage operation

Hori, A. ; Hiroki, A. ; Nakaoka, H. ; Segawa, M. ; Hori, T.

IEEE transactions on electron devices, 1995-01, Vol.42 (1), p.78-86 [Periódico revisado por pares]

New York, NY: IEEE

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8
Approaches to conducting polymer devices with nanostructures: photoelectrochemical function of one-dimensional and two-dimensional porphyrin polymers with oligothienyl molecular wire
Approaches to conducting polymer devices with nanostructures: photoelectrochemical function of one-dimensional and two-dimensional porphyrin polymers with oligothienyl molecular wire
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Approaches to conducting polymer devices with nanostructures: photoelectrochemical function of one-dimensional and two-dimensional porphyrin polymers with oligothienyl molecular wire

Shimidzu, Takeo ; Segawa, Hiroshi ; Wu, Feipeng ; Nakayama, Norihiro

Journal of photochemistry and photobiology. A, Chemistry, 1995-12, Vol.92 (1), p.121-127 [Periódico revisado por pares]

Lausanne: Elsevier B.V

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9
Nanometer-scale lithography on the oligosilane Langmuir-Blodgett film
Nanometer-scale lithography on the oligosilane Langmuir-Blodgett film
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Nanometer-scale lithography on the oligosilane Langmuir-Blodgett film

MARUYAMA, H ; KOSAI, N ; SATO, T ; SAGISAKA, S ; SEGAWA, H ; SHIMIDZU, T ; TANAKA, K

Japanese Journal of Applied Physics, 1997, Vol.36 (12A), p.7312-7316 [Periódico revisado por pares]

Tokyo: Japanese journal of applied physics

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10
Performance of positive tone chemically amplified resists for next generation photomask fabrication
Performance of positive tone chemically amplified resists for next generation photomask fabrication
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Performance of positive tone chemically amplified resists for next generation photomask fabrication

SEGAWA, T ; KURIHARA, M.-A ; SASAKI, S ; INOMATA, H ; HAYASHI, N ; SANO, H

SPIE proceedings series, 1998, p.82-93

Bellingham WA: SPIE

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