Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Effects of a temperature gradient on a domain-mode Gunn oscillator operating in a resonatorDas, A.Solid-state electronics, 1974-01, Vol.17 (3), p.313-315 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
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2 |
Material Type: Ata de Congresso
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Effects of halo implant on hot carrier reliability of sub-quarter micron MOSFETsDas, A. ; De, H. ; Misra, V. ; Venkatesan, S. ; Veeraraghavan, S. ; Foisy, M.1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173), 1998, p.189-193IEEETexto completo disponível |
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3 |
Material Type: Ata de Congresso
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Room temperature polariton lasing in a single ZnO nanowire microcavityDas, A. ; Heo, J. ; Guo, W. ; Bayraktaroglu, A. ; Phillips, J. ; Bhattacharya, P.2012 Conference on Lasers and Electro-Optics (CLEO), 2012, p.1-2IEEETexto completo disponível |
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4 |
Material Type: Artigo
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Characterisation and integration feasibility of JSR’s low- k dielectric LKD-5109Das, A ; Kokubo, T ; Furukawa, Y ; Struyf, H ; Vos, I ; Sijmus, B ; Iacopi, F ; Van. Aelst, J ; Le, Q.T ; Carbonell, L ; Brongersma, S ; Maenhoudt, M ; Tokei, Z ; Vervoort, I ; Sleeckx, E ; Stucchi, M ; Schaekers, M ; Boullart, W ; Rosseel, E ; Van Hove, M ; Vanhaelemeersch, S ; Shiota, A ; Maex, KMicroelectronic engineering, 2002-10, Vol.64 (1), p.25-33 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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5 |
Material Type: Artigo
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Numerical study of emitter-base junction design for AlGaAs/GaAs heterojunction bipolar transistorsDas, A. ; Lundstrom, M.S.IEEE transactions on electron devices, 1988-07, Vol.35 (7), p.863-870 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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6 |
Material Type: Artigo
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Scattering matrix simulation of electron transport in model bipolar devicesDas, A. ; Lundstrom, M.S.IEEE transactions on electron devices, 1992-05, Vol.39 (5), p.1157-1163 [Periódico revisado por pares]NEW YORK: IEEETexto completo disponível |
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7 |
Material Type: Artigo
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Theoretical Investigation of Resonant Modes of Shorting Post Loaded Circular Microstrip Antenna On SphereDe, A. ; Chakravarty, T.Journal of electromagnetic waves and applications, 2000-01, Vol.14 (8), p.1087-1102 [Periódico revisado por pares]Zeist: Taylor & Francis GroupTexto completo disponível |
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8 |
Material Type: Artigo
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Electrodeposition of Sn and Au–Sn alloys from a single non-cyanide electrolyteHe, A. ; Ivey, D. G.Journal of materials science. Materials in electronics, 2012-12, Vol.23 (12), p.2186-2193 [Periódico revisado por pares]Boston: Springer USTexto completo disponível |
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9 |
Material Type: Artigo
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Considerations of the double-cross-slip mechanism for basal and rhombohedral twinning in sapphire (α-Al2O3)He, A. ; Lagerlöf, K. P. D. ; Castaing, J. ; Heuer, A. H.Philosophical magazine. A, Physics of condensed matter. Defects and mechanical properties, 2002-10, Vol.82 (15), p.2855-2867 [Periódico revisado por pares]Taylor & Francis GroupTexto completo disponível |
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10 |
Material Type: Artigo
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Development of stable, non-cyanide solutions for electroplating Au-Sn alloy filmsHe, A ; Liu, Q ; Ivey, D GJournal of materials science. Materials in electronics, 2006-01, Vol.17 (1), p.63-70 [Periódico revisado por pares]Texto completo disponível |