Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Simulations of the performance of the MVD in PHENIXBennett, M.J. ; Bernardin, J. ; Boissevain, J. ; Britton, C. ; Chang, J. ; Clark, D. ; Conway, R. ; Cunningham, R. ; Emery, M. ; Ericson, N. ; Fung, S.-Y. ; Hahn, S. ; Van Hecke, H. ; Jaffe, D. ; Kang, J.-H. ; Kim, S.-Y. ; Kim, Y.-G. ; Lind, R. ; Marek, L. ; McCabe, K. ; Moore, T. ; Park, J.-H. ; Richardson, G. ; Ryu, S.-S. ; Schlei, B. ; Seto, R. ; Shiina, T. ; Simon-Gillo, J. ; Simpson, M. ; Smith, G. ; Sullivan, J.P. ; Takahashi, Y. ; Wintenberg, A. ; Xu, G.IEEE transactions on nuclear science, 1999-12, Vol.46 (6), p.2022-2026 [Periódico revisado por pares]United States: IEEETexto completo disponível |
2 |
Material Type: Artigo
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Front-end electronics for PHENIX time expansion chamberK Barish W C Chang; Olácio Dietzsch; T Ferdousi; A Franz; J Fried; S Y Fung; J Gannon; J Harder; A Kandasamy; M A Kelley; D Kotchetkov; A Lebedev; X H Li; J Mahon; S Mioduszewiski; M Muniruzzaman; B Nandi; E O'Brien; P O'Connor; R Pisani; S Rankowitz; M Rosati; R Seto; E. M Takagui (Emi Marcia); W Von Achen; H Q Wang; W XieIEEE Transactions on Nuclear Science New York v. 49, n. 3, p. 1141-1146, 2002New York 2002Item não circula. Consulte sua biblioteca.(Acessar) |
3 |
Material Type: Artigo
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Front-end electronics for PHENIX time expansion chamberK Barish W C Chang; Olácio Dietzsch; T Ferdousi; A Franz; J Fried; S Y Fung; J Gannon; J Harder; A Kandasamy; M A Kelley; D Kotchetkov; A Lebedev; X H Li; J Mahon; S Mioduszewiski; M Muniruzzaman; B Nandi; E O'Brien; P O'Connor; R Pisani; S Rankowitz; M Rosati; R Seto; E. M Takagui (Emi Marcia); W Von Achen; H Q Wang; W XieIEEE Transactions on Nuclear Science New York v. 49, n. 3, p. 1141-1146, 2002New York 2002Item não circula. Consulte sua biblioteca.(Acessar) |
4 |
Material Type: Artigo
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Front-end electronics for PHENIX time expansion chamberBarish, K. ; Chang, W.C. ; Dietzsch, O. ; Ferdousi, T. ; Franz, A. ; Fried, J. ; Fung, S.Y. ; Gannon, J. ; Harder, J. ; Kandasamy, A. ; Kelley, M.A. ; Kotchetkov, D. ; Lebedev, A. ; Mahon, J. ; Mioduszewski, S. ; Muniruzzaman, M. ; Nandi, B. ; O'Brien, E. ; O'Connor, P. ; Pisani, R. ; Rankowitz, S. ; Rosati, M. ; Seto, R. ; Takagui, E.M. ; Von Achen, W. ; Wang, H.Q. ; Xie, W.IEEE transactions on nuclear science, 2002-06, Vol.49 (3), p.1141-1146 [Periódico revisado por pares]New York: IEEETexto completo disponível |
5 |
Material Type: Artigo
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Simulations of the performance of the MVD in PHENIBennett, M J ; Bernardin, J ; Boissevain, J ; Britton, C ; Chang, J ; Clark, D ; Conway, R ; Cunningham, R ; Emery, M ; Ericson, N ; Fung, S-Y ; Hahn, S ; Van Hecke, H ; Jaffe, D ; Kang, J-H ; Kim, S-Y ; Kim, Y-G ; Lind, R ; Marek, LIEEE transactions on nuclear science, 1999-12, Vol.46 (6), p.2022-2026 [Periódico revisado por pares]Texto completo disponível |
6 |
Material Type: Artigo
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An Area Efficient Stacked Latch Design Tolerant to SEU in 28 nm FDSOI TechnologyWang, H.-B ; Chen, L. ; Liu, R. ; Li, Y.-Q ; Kauppila, J. S. ; Bhuva, B. L. ; Lilja, K. ; Wen, S.-J ; Wong, R. ; Fung, R. ; Baeg, S.IEEE transactions on nuclear science, 2016-12, Vol.63 (6), p.3003-3009 [Periódico revisado por pares]New York: IEEETexto completo disponível |
7 |
Material Type: Artigo
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Evaluation of SEU Performance of 28-nm FDSOI Flip-Flop DesignsWang, H.-B ; Kauppila, J. S. ; Lilja, K. ; Bounasser, M. ; Chen, L. ; Newton, M. ; Li, Y.-Q ; Liu, R. ; Bhuva, B. L. ; Wen, S.-J ; Wong, R. ; Fung, R. ; Baeg, S. ; Massengill, L. W.IEEE transactions on nuclear science, 2017-01, Vol.64 (1), p.367-373 [Periódico revisado por pares]New York: IEEETexto completo disponível |
8 |
Material Type: Artigo
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Single-Event Transient Sensitivity Evaluation of Clock Networks at 28-nm CMOS TechnologyWang, H.-B ; Mahatme, N. ; Chen, L. ; Newton, M. ; Li, Y.-Q ; Liu, R. ; Chen, M. ; Bhuva, B. L. ; Lilja, K. ; Wen, S.-J ; Wong, R. ; Fung, R. ; Baeg, S.IEEE transactions on nuclear science, 2016-02, Vol.63 (1), p.385-391 [Periódico revisado por pares]New York: IEEETexto completo disponível |
9 |
Material Type: Artigo
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An SEU-Tolerant DICE Latch Design With Feedback TransistorsWang, H.-B ; Li, Y.-Q ; Chen, L. ; Li, L.-X ; Liu, R. ; Baeg, S. ; Mahatme, N. ; Bhuva, B. L. ; Wen, S.-J ; Wong, R. ; Fung, R.IEEE transactions on nuclear science, 2015-04, Vol.62 (2), p.548-554 [Periódico revisado por pares]IEEETexto completo disponível |
10 |
Material Type: Artigo
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Single-Event Upset Cross Section at High Frequencies for RHBD Flip-Flop Designs at the 5-nm Bulk FinFET NodeXiong, Yoni ; Pieper, Nicholas J. ; Qian, Ying ; Wodzro, Stuart E. ; Narasimham, Balaji ; Fung, Rita ; Wen, Shi-Jie ; Bhuva, Bharat L.IEEE transactions on nuclear science, 2024-04, Vol.71 (4), p.839-844 [Periódico revisado por pares]New York: IEEETexto completo disponível |