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1 |
Material Type: Ata de Congresso
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0.0354mm 82μW 125KS/s 3-axis readout circuit for capacitive MEMS accelerometerLai, Kelvin Yi-Tse ; Zih-Cheng He ; Yu-Tao Yang ; Hsie-Chia Chang ; Chen-Yi Lee2013 IEEE Asian Solid-State Circuits Conference (A-SSCC), 2013, p.109-112IEEETexto completo disponível |
2 |
Material Type: Ata de Congresso
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0.2 mu m gate pseudomorphic inverted HEMT for high speed digital ICsTsuji, H. ; Fujishiro, H.I. ; Shikata, M. ; Tanaka, K. ; Nishi, S.[1991] GaAs IC Symposium Technical Digest, 1991, p.113-116IEEETexto completo disponível |
3 |
Material Type: Ata de Congresso
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1.05 Tbit/s WDM transmission over 8,186 km using distributed Raman amplifier repeatersNakamo, H. ; Tanaka, T. ; Shimojoh, N. ; Naito, T. ; Yokota, I. ; Sugiyama, A. ; Ueki, T. ; Suyama, M.OFC 2001. Optical Fiber Communication Conference and Exhibit. Technical Digest Postconference Edition (IEEE Cat. 01CH37171), 2001, Vol.2, p.TuF6-TuF6IEEETexto completo disponível |
4 |
Material Type: Ata de Congresso
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1.22 Tbit/s WDM transmission over 7,221 km with 38 nm bandwidth expanded by distributed Raman amplifier and EDFAShimojoh, N. ; Tanaka, T. ; Naito, T. ; Nakamoto, H. ; Yokota, I. ; Sugiyama, A. ; Ueki, T. ; Suyama, M.OFC 2001. Optical Fiber Communication Conference and Exhibit. Technical Digest Postconference Edition (IEEE Cat. 01CH37171), 2001, Vol.3, p.WF3-WF3IEEETexto completo disponível |
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Material Type: Ata de Congresso
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A 0.026mm2 capacitance-to-digital converter for biotelemetry applications using a charge redistribution techniqueKota Tanaka ; Yasuhide Kuramochi ; Takashi Kurashina ; Kenichi Okada ; Akira Matsuzawa2007 IEEE Asian Solid-State Circuits Conference, 2007, p.244-247IEEETexto completo disponível |
6 |
Material Type: Ata de Congresso
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A 0.1 /spl mu/m CMOS with a step channel profile formed by ultra high vacuum CVD and in-situ doped ionsHori, A. ; Hirai, T. ; Tanaka, M. ; Nakaoka, H. ; Umimoto, H. ; Yasuhira, M.Proceedings of IEEE International Electron Devices Meeting, 1993, p.909-911IEEETexto completo disponível |
7 |
Material Type: Ata de Congresso
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A 0.13-μm CMOS 5-Gb/s 10-meter 28AWG cable transceiver with no-feedback-loop continuous-time post-equalizerKUDOH, Yoshiharu ; FUKAISHI, Muneo ; MIZUNO, MasayukiPiscataway NJ: IEEE 2002Texto completo disponível |
8 |
Material Type: Ata de Congresso
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A 0.15 /spl mu/m KrF lithography for 1 Gb DRAM product using highly printable patterns and thin resist processOzaki, T. ; Azuma, T. ; Itoh, M. ; Kawamura, D. ; Tanaka, S. ; Ishibashi, Y. ; Shiratake, S. ; Kyoh, S. ; Kondoh, T. ; Inoue, S. ; Tsuchida, K. ; Kohyama, Y. ; Onishi, Y.1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216), 1998, p.84-85IEEETexto completo disponível |
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Material Type: Ata de Congresso
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A 0.18-μm CMOS Low-spurious Local Signal Generator for MB-OFDM UWB RadioTokairin, T. ; Matsuno, N. ; Numata, K. ; Maeda, T. ; Tanaka, S.2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2007, p.215-218IEEETexto completo disponível |
10 |
Material Type: Ata de Congresso
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A 0.24pJ/bit, 16Gbps OOK Transmitter Circuit in 45-nm CMOS for Inter and Intra-Chip Wireless InterconnectsShinde, Tanmay ; Subramaniam, Suryanarayanan ; Deshmukh, Padmanabh ; Ahmed, M Meraj ; Indovina, Mark ; Ganguly, AmlanProceedings of the 2018 Great Lakes Symposium on VLSI, 2018, p.69-74New York, NY, USA: ACMTexto completo disponível |