Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
---|---|---|---|
1 |
Material Type: Artigo
|
![]() |
0-1 GHZ WAVE-GUIDE 10.6 MU M GAAS ELECTROOPTIC MODULATORBROWN, RTIEEE journal of quantum electronics, 1992-05, Vol.28 (5), p.1349-1352 [Periódico revisado por pares]NEW YORK: IEEETexto completo disponível |
2 |
Material Type: Artigo
|
![]() |
0.04 Hz relative optical-frequency stability in a 1.5 mu m distributed-Bragg-reflector (DBR) laserIshida, O. ; Toba, H. ; Tohmori, Y.IEEE photonics technology letters, 1989-12, Vol.1 (12), p.452-454IEEETexto completo disponível |
3 |
Material Type: Artigo
|
![]() |
0.1-1-THz High-Repetition-Rate Femtosecond Pulse Generation From Quasi-CW Dual-Pumped All-Fiber Phase-Locked Kerr CombsLuo, Zhengqian ; Zhong, Min ; Ruan, Qiujun ; Huang, Yizhong ; Guo, Changlei ; Xu, Huiying ; Che, Kaijun ; Xu, Bin ; Cai, ZhipingIEEE photonics journal, 2016-04, Vol.8 (2), p.1-7 [Periódico revisado por pares]Piscataway: IEEETexto completo disponível |
4 |
Material Type: Artigo
|
![]() |
0.1-20 THz ultra-broadband perfect absorber via a flat multi-layer structureXu, Gongjie ; Zhang, Jun ; Zang, Xiaofei ; Sugihara, Okihiro ; Zhao, Hongwei ; Cai, BinOptics express, 2016-10, Vol.24 (20), p.23177-23185 [Periódico revisado por pares]United StatesTexto completo disponível |
5 |
Material Type: Artigo
|
![]() |
0.1 dB/cm waveguide losses in single-mode SOI rib waveguidesFischer, U. ; Zinke, T. ; Kropp, J.-R. ; Arndt, F. ; Petermann, K.IEEE photonics technology letters, 1996-05, Vol.8 (5), p.647-648IEEETexto completo disponível |
6 |
Material Type: Artigo
|
![]() |
0.1 eV HgCdTe photoconductive detector performanceKinch, M.A. ; Borrello, S.R. ; Simmons, A.Infrared physics, 1977-01, Vol.17 (2), p.127-135Elsevier B.VTexto completo disponível |
7 |
Material Type: Artigo
|
![]() |
0.1 ev HgCdTe photodetectorsKinch, M.A. ; Borrello, S.R.Infrared physics, 1975-01, Vol.15 (2), p.111-124Elsevier B.VTexto completo disponível |
8 |
Material Type: Artigo
|
![]() |
0.1-Micrometer scaling by 1:1 synchrotron radiation lithographyMochiji, K ; Ogawa, T ; Oizumil, H ; Soga, TMicroelectronic engineering, 1992-11, Vol.18 (4), p.333-340 [Periódico revisado por pares]AMSTERDAM: Elsevier B.VTexto completo disponível |
9 |
Material Type: Artigo
|
![]() |
0.1-nm narrow bandwidth transmission of a 2.5-Gb/s spectrum-sliced incoherent light channel using an all-optical bandwidth expansion technique at the receiverHan, Jung-Hee ; Ko, Joon-Won ; Lee, Jae Seung ; Shin, Sang-YungIEEE photonics technology letters, 1998-10, Vol.10 (10), p.1501-1503IEEETexto completo disponível |
10 |
Material Type: Artigo
|
![]() |
0.1-μm InAlAs/InGaAs HEMTS with an InP-recess-etch stopper grown by MOCVDEnoki, Takatomo ; Ito, Hiroshi ; Ikuta, Kenji ; Umeda, Yohtaro ; Ishii, YasunobuMicrowave and optical technology letters, 1996-02, Vol.11 (3), p.135-139 [Periódico revisado por pares]New York: Wiley Subscription Services, Inc., A Wiley CompanyTexto completo disponível |