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1
Exciton-phonon systems in 'GA''AS'-'GA IND. 1-X''AL IND.X''AS' quantum wells
Exciton-phonon systems in 'GA''AS'-'GA IND. 1-X''AL IND.X''AS' quantum wells
Material Type:
Artículo 		Añadir a Mi Portal

Exciton-phonon systems in 'GA''AS'-'GA IND. 1-X''AL IND.X''AS' quantum wells

Marcos Henrique Degani Oscar Hipólito

Inglaterra v.2 , p.578-581, 1987 Semiconductor Science and Technology

Inglaterra 1987

Disponible en IFSC - Inst. Física de São Carlos    (PROD000736 )(Obténgalo)

2
Doping of silicon with boron by rapid thermal processing
Doping of silicon with boron by rapid thermal processing
Material Type:
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Doping of silicon with boron by rapid thermal processing

J. P. Souza Claus Martin Hasenack; Jacobus Willibrordus Swart 1950-

London v.3 , n.4 , p.277-90, apr. 1988 Semiconductor Science and Technology

London 1988

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3
Doping of silicon with boron by rapid thermal processing
Doping of silicon with boron by rapid thermal processing
Material Type:
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Doping of silicon with boron by rapid thermal processing

J. P. Souza Claus Martin Hasenack; Jacobus Willibrordus Swart 1950-

London v.3 , n.4 , p.277-90, apr. 1988 Semiconductor Science and Technology

London 1988

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4
Many-electron treatment for chalcogen complexes in silicon
Many-electron treatment for chalcogen complexes in silicon
Material Type:
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Many-electron treatment for chalcogen complexes in silicon

A Fazzio A Antonelli; H Ferreira de Paula Junior; Sylvio Canuto

v.5 , n.3 , p.196-9, 1990 Semiconductor Science and Technology

1990

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5
Many-electron treatment for chalcogen complexes in silicon
Many-electron treatment for chalcogen complexes in silicon
Material Type:
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Many-electron treatment for chalcogen complexes in silicon

A Fazzio A Antonelli; H Ferreira de Paula Junior; Sylvio Canuto

v.5 , n.3 , p.196-9, 1990 Semiconductor Science and Technology

1990

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6
Photoluminescence of 'GA' sb grown by metal-organic vapour phase epitaxy
Photoluminescence of 'GA' sb grown by metal-organic vapour phase epitaxy
Material Type:
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Photoluminescence of 'GA' sb grown by metal-organic vapour phase epitaxy

André Bohomoletz Henriques E T R Chidley; S K Haywood; R J Nicholas; N J Mason; P J Walker

v.6 , p.45, 1991 Semiconductor Science and Technology

1991

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7
Photoluminescence of 'GA' sb grown by metal-organic vapour phase epitaxy
Photoluminescence of 'GA' sb grown by metal-organic vapour phase epitaxy
Material Type:
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Photoluminescence of 'GA' sb grown by metal-organic vapour phase epitaxy

André Bohomoletz Henriques E T R Chidley; S K Haywood; R J Nicholas; N J Mason; P J Walker

v.6 , p.45, 1991 Semiconductor Science and Technology

1991

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8
New theoretical model for optical transitions in the photoreflectance spectrum from 'GHAMA'-doped structures
New theoretical model for optical transitions in the photoreflectance spectrum from 'GHAMA'-doped structures
Material Type:
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New theoretical model for optical transitions in the photoreflectance spectrum from 'GHAMA'-doped structures

D Beliaev L M R Scolfaro; J. R Leite (José Roberto)

v.8 , p.1479, 1993 Semiconductor Science and Technology

1993

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9
New theoretical model for optical transitions in the photoreflectance spectrum from 'GHAMA'-doped structures
New theoretical model for optical transitions in the photoreflectance spectrum from 'GHAMA'-doped structures
Material Type:
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New theoretical model for optical transitions in the photoreflectance spectrum from 'GHAMA'-doped structures

D Beliaev L M R Scolfaro; J. R Leite (José Roberto)

v.8 , p.1479, 1993 Semiconductor Science and Technology

1993

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10
Atomic relaxation and electronic states in ultrathin 'GE' / 'ZN''SE' superlattices
Atomic relaxation and electronic states in ultrathin 'GE' / 'ZN''SE' superlattices
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Atomic relaxation and electronic states in ultrathin 'GE' / 'ZN''SE' superlattices

A. C. Ferraz (Armando Corbani) G. P Srivastava

London v.8 , n.1 , p.67-72, jan. 1993 Semiconductor Science and Technology

London 1993

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por este autor/creador:

  1. Martino, J
  2. Henriques, A
  3. Leite, J
  4. Agopian, P
  5. Gonçalves, L

con este tema:

  1. Matéria Condensada
  2. Semicondutores
  3. Engenharia Mecânica
  4. Microeletrônica
  5. Silício

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