Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Size control of InP nanowires by in situ annealing and its application to the formation of InAsP quantum dotsSasaki, Masahiro ; Akamatsu, Tomoya ; Tomioka, Katsuhiro ; Motohisa, JunichiNanotechnology, 2024-05, Vol.35 (19), p.195604 [Periódico revisado por pares]EnglandTexto completo disponível |
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2 |
Material Type: Artigo
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High-quality vertically aligned InAs nanowires grown by molecular-beam epitaxy using Ag–In alloy segregationLiu, Lei ; Pan, Dong ; Wen, Lianjun ; Zhuo, Ran ; Zhao, JianhuaNanotechnology, 2023-05, Vol.34 (22), p.225701 [Periódico revisado por pares]England: IOP PublishingTexto completo disponível |
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3 |
Material Type: Artigo
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In situ off-axis electron holography of real-time dopant diffusion in GaAs nanowiresBalasubramanian, Ganapathi Prabhu Sai ; Lebedkina, Elizaveta ; Goktas, Nebile Isik ; Wagner, Jakob Birkedal ; Hansen, Ole ; LaPierre, Ray ; Semenova, Elizaveta ; Mølhave, Kristian ; Beleggia, Marco ; Fiordaliso, Elisabetta MariaNanotechnology, 2022-11, Vol.33 (47), p.475705 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
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4 |
Material Type: Artigo
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Effect of crystal structure on the Young’s modulus of GaP nanowiresAlekseev, Prokhor A ; Borodin, Bogdan R ; Geydt, Pavel ; Khayrudinov, Vladislav ; Bespalova, Kristina ; Kirilenko, Demid A ; Reznik, Rodion R ; Nashchekin, Alexey V ; Haggrén, Tuomas ; Lähderanta, Erkki ; Cirlin, George E ; Lipsanen, Harri ; Dunaevskiy, Mikhail SNanotechnology, 2021-09, Vol.32 (38), p.385706 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
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5 |
Material Type: Artigo
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Comparison of GaAs nanowire growth seeded by Ag and Au colloidal nanoparticles on siliconBerdnikov, Yury ; Ilkiv, Igor ; Sibirev, Nickolay ; Ubyivovk, Evgeniy ; Bouravleuv, AlexeiNanotechnology, 2020-09, Vol.31 (37), p.374005-374005 [Periódico revisado por pares]England: IOP PublishingTexto completo disponível |
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6 |
Material Type: Artigo
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Thermal decomposition of GaAs nanowiresIlkiv, Igor ; Kirilenko, Demid ; Kotlyar, Konstantin ; Bouravleuv, AlexeyNanotechnology, 2020-01, Vol.31 (5), p.55701-055701 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
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7 |
Material Type: Artigo
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Effects of the surface preparation and buffer layer on the morphology, electronic and optical properties of the GaN nanowires on SiBolshakov, A D ; Fedorov, V V ; Shugurov, K Yu ; Mozharov, A M ; Sapunov, G A ; Shtrom, I V ; Mukhin, M S ; Uvarov, A V ; Cirlin, G E ; Mukhin, I SNanotechnology, 2019-09, Vol.30 (39), p.395602-395602 [Periódico revisado por pares]England: IOP PublishingTexto completo disponível |
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8 |
Material Type: Artigo
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New method for MBE growth of GaAs nanowires on silicon using colloidal Au nanoparticlesBouravleuv, A ; Ilkiv, I ; Reznik, R ; Kotlyar, K ; Soshnikov, I ; Cirlin, G ; Brunkov, P ; Kirilenko, D ; Bondarenko, L ; Nepomnyaschiy, A ; Gruznev, D ; Zotov, A ; Saranin, A ; Dhaka, V ; Lipsanen, HNanotechnology, 2018-01, Vol.29 (4), p.045602-045602 [Periódico revisado por pares]England: IOP PublishingTexto completo disponível |