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Refinado por: Nome da Publicação: Journal Of Applied Physics remover
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1
A comparative analysis of deep level emission in ZnO layers deposited by various methods
A comparative analysis of deep level emission in ZnO layers deposited by various methods
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A comparative analysis of deep level emission in ZnO layers deposited by various methods

Ahn, Cheol Hyoun ; Kim, Young Yi ; Kim, Dong Chan ; Mohanta, Sanjay Kumar ; Cho, Hyung Koun

Journal of applied physics, 2009-01, Vol.105 (1), p.013502-013502-5 [Periódico revisado por pares]

United States: American Institute of Physics

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2
Factors driving c -axis orientation and disorientation of Li Nb O 3 thin films deposited on TiN and indium tin oxide by electron cyclotron resonance plasma sputtering
Factors driving c -axis orientation and disorientation of Li Nb O 3 thin films deposited on TiN and indium tin oxide by electron cyclotron resonance plasma sputtering
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Factors driving c -axis orientation and disorientation of Li Nb O 3 thin films deposited on TiN and indium tin oxide by electron cyclotron resonance plasma sputtering

Akazawa, H. ; Shimada, M.

Journal of applied physics, 2006-06, Vol.99 (12), p.124103-124103-8 [Periódico revisado por pares]

American Institute of Physics

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3
Localized surface plasmons in face to face dimer silver triangular prism nanoparticles
Localized surface plasmons in face to face dimer silver triangular prism nanoparticles
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Localized surface plasmons in face to face dimer silver triangular prism nanoparticles

Azarian, Abas ; Babaei, Ferydon

Journal of applied physics, 2016-05, Vol.119 (20) [Periódico revisado por pares]

Melville: American Institute of Physics

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4
Effects of annealing on photoluminescence and defect interplay in ZnO bombarded by heavy ions: Crucial role of the ion dose
Effects of annealing on photoluminescence and defect interplay in ZnO bombarded by heavy ions: Crucial role of the ion dose
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Effects of annealing on photoluminescence and defect interplay in ZnO bombarded by heavy ions: Crucial role of the ion dose

Azarov, Alexander ; Galeckas, Augustinas ; Mieszczyński, Cyprian ; Hallén, Anders ; Kuznetsov, Andrej

Journal of applied physics, 2020-01, Vol.127 (2) [Periódico revisado por pares]

Melville: American Institute of Physics

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5
Photoreflectance measurements on 'SI' 'DELTA'-doped 'GA''AS' samples grown by molecular-beam epitaxy
Photoreflectance measurements on 'SI' 'DELTA'-doped 'GA''AS' samples grown by molecular-beam epitaxy
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Photoreflectance measurements on 'SI' 'DELTA'-doped 'GA''AS' samples grown by molecular-beam epitaxy

A A Bernussi F Iikawa; P Motisuke; Pierre Basmaji; Máximo Siu Li; Oscar Hipólito

New York v.67, n.9 , p.4149-51, mai. 1990 Journal of Applied Physics

New York 1990

Localização: IFSC - Inst. Física de São Carlos    (PROD000861 )(Acessar)

6
Photoreflectance measurements on 'SI' 'DELTA'-doped 'GA''AS' samples grown by molecular-beam epitaxy
Photoreflectance measurements on 'SI' 'DELTA'-doped 'GA''AS' samples grown by molecular-beam epitaxy
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Photoreflectance measurements on 'SI' 'DELTA'-doped 'GA''AS' samples grown by molecular-beam epitaxy

A A Bernussi F Iikawa; P Motisuke; Pierre Basmaji; Máximo Siu Li; Oscar Hipólito

New York v.67, n.9 , p.4149-51, mai. 1990 Journal of Applied Physics

New York 1990

Localização: IFSC - Inst. Física de São Carlos    (PROD000861 )(Acessar)

7
Photoreflectance measurements on Si δ-doped GaAs samples grown by molecular-beam epitaxy
Photoreflectance measurements on Si δ-doped GaAs samples grown by molecular-beam epitaxy
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Photoreflectance measurements on Si δ-doped GaAs samples grown by molecular-beam epitaxy

BERNUSSI, A. A ; IIKAWA, F ; MOTISUKE, P ; BASMAJI, P ; SIU LI, M ; HIPOLITO, O

Journal of applied physics, 1990-05, Vol.67 (9), p.4149-4151 [Periódico revisado por pares]

Woodbury, NY: American Institute of Physics

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8
Carbon doping controlled thermoluminescent defect centers in nanoporous alumina for ion beam dosimetry
Carbon doping controlled thermoluminescent defect centers in nanoporous alumina for ion beam dosimetry
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Carbon doping controlled thermoluminescent defect centers in nanoporous alumina for ion beam dosimetry

Bhowmick, S. ; Pal, S. ; Das, D. ; Singh, V. K. ; Khan, S. A. ; Hübner, R. ; Barman, S. R. ; Kanjilal, D. ; Kanjilal, A.

Journal of applied physics, 2018-10, Vol.124 (13) [Periódico revisado por pares]

Melville: American Institute of Physics

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9
Revealing carbon mediated luminescence centers with enhanced lifetime in porous alumina
Revealing carbon mediated luminescence centers with enhanced lifetime in porous alumina
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Revealing carbon mediated luminescence centers with enhanced lifetime in porous alumina

Bhowmick, S. ; Pal, S. ; Singh, A. ; Gupta, M. ; Phase, D. M. ; Singh, A. K. ; Kanjilal, A.

Journal of applied physics, 2019-10, Vol.126 (16) [Periódico revisado por pares]

Melville: American Institute of Physics

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10
Photoluminescence of 6H-SiC nanostructures fabricatedby electrochemical etching
Photoluminescence of 6H-SiC nanostructures fabricatedby electrochemical etching
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Photoluminescence of 6H-SiC nanostructures fabricatedby electrochemical etching

Botsoa, J. ; Bluet, J. M. ; Lysenko, V. ; Marty, O. ; Barbier, D. ; Guillot, G.

Journal of applied physics, 2007-10, Vol.102 (8), p.083526-083526-5 [Periódico revisado por pares]

American Institute of Physics

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Deste Autor:

  1. Siu Li, M
  2. de Camargo, A
  3. Messaddeq, Y
  4. Hipólito, O
  5. Longo, V

Neste Assunto:

  1. Physics
  2. Physics, Applied
  3. Physical Sciences
  4. Science & Technology
  5. Applied Physics

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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