Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Dose Rate Tolerant HEXFET Power SupplyAbare, W. E. ; Martindale, W. K.IEEE transactions on nuclear science, 1981-01, Vol.28 (6), p.4380-4383 [Periódico revisado por pares]IEEETexto completo disponível |
2 |
Material Type: Ata de Congresso
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On the synthesis of MVL functions for current-mode CMOS circuits implementationAbd-El-Barr, M.H. ; Mahroos, M.I.Multiple-Valued Logic, 22nd Symposium (ISMVL '92), 1992, p.221-228IEEE Comput. Soc. PressTexto completo disponível |
3 |
Material Type: Ata de Congresso
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Analysis and design of broadside and overlap microstrip line couplers by finite element methodAbdallah, E.A.F. ; El-Said, M. ; Ahmed, A.A.N. ; El-Kinawy, E.E.K.[1992] Proceedings of the 35th Midwest Symposium on Circuits and Systems, 1992, p.647-650 vol.1IEEETexto completo disponível |
4 |
Material Type: Artigo
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Yield optimization for arbitrary statistical distributions: Part II-ImplementationAbdel-Malek, H. ; Bandler, J.IEEE transactions on circuits and systems, 1980-04, Vol.27 (4), p.253-262IEEETexto completo disponível |
5 |
Material Type: Artigo
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Nonlinear model for MODFET parasitic resistancesAbdel-Motaleb, Ibrahim M. ; Li, C.N.Solid-state electronics, 1992-06, Vol.35 (6), p.759-767 [Periódico revisado por pares]OXFORD: Elsevier LtdTexto completo disponível |
6 |
Material Type: Artigo
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GaAs inverted common drain logic (ICDL) and its performance compared with other GaAs logic familiesAbdel-Motaleb, Ibrahim M. ; Rutherford, William C. ; Young, LawrenceSolid-state electronics, 1987-04, Vol.30 (4), p.403-414 [Periódico revisado por pares]Oxford: Elsevier LtdTexto completo disponível |
7 |
Material Type: Artigo
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An analytical charge control model for AlGaAs modulation-doped field effect transistorsAbdel-Motaleb, Ibrahim M. ; Syu, T.-L.Journal of applied physics, 1990-03, Vol.67 (6), p.3141-3147 [Periódico revisado por pares]Texto completo disponível |
8 |
Material Type: Artigo
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Electronic control of impulse generatorsAbdel-Salam, M ; El-Mohandes, M ThMeasurement science & technology, 1991-11, Vol.2 (11), p.1113-1115 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
9 |
Material Type: Ata de Congresso
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Behavioural description of VLSI circuits based on Petri netsAbdelrazik, M.B.E.1991 IEEE International Symposium on Circuits and Systems (ISCAS), 1991, p.926-929 vol.2IEEETexto completo disponível |
10 |
Material Type: Artigo
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A GaAs MESFET Oscillator Quasi-Linear Design MethodAbe, H.IEEE transactions on microwave theory and techniques, 1986-01, Vol.34 (1), p.19-25 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |