Quenching of lasing in high power semiconductor laser

Slipchenko, S. O. ; Vinokurov, D. A. ; Lyutetskiy, A. V. ; Pikhtin, N. A. ; Stankevich, A. L. ; Fetisova, N. V. ; Bondarev, A. D. ; Tarasov, I. S.

Dordrecht: SP MAIK Nauka/Interperiodica

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High-power laser diodes with an emission wavelength of 835 nm on the basis of various types of heterostructures

Murashova, A. V. ; Vinokurov, D. A. ; Pikhtin, N. A. ; Slipchenko, S. O. ; Shamakhov, V. V. ; Vasilyeva, V. V. ; Kapitonov, V. A. ; Leshko, A. Yu ; Lyutetskiy, A. V. ; Nalet, T. A. ; Nikolaev, D. N. ; Stankevich, A. L. ; Fetisova, N. V. ; Tarasov, I. S. ; Kim, Y. S. ; Kang, D. H. ; Lee, C. Y.

Dordrecht: SP MAIK Nauka/Interperiodica

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850-nm diode lasers based on AlGaAsP/GaAs heterostructures

Vinokurov, D. A. ; Kapitonov, V. A. ; Lyutetskiy, A. V. ; Nikolaev, D. N. ; Pikhtin, N. A. ; Slipchenko, S. O. ; Stankevich, A. L. ; Shamakhov, V. V. ; Vavilova, L. S. ; Tarasov, I. S.

Dordrecht: SP MAIK Nauka/Interperiodica

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High-power laser diodes based on asymmetric separate-confinement heterostructures

Vinokurov, D. A. ; Zorina, S. A. ; Kapitonov, V. A. ; Murashova, A. V. ; Nikolaev, D. N. ; Stankevich, A. L. ; Khomylev, M. A. ; Shamakhov, V. V. ; Leshko, A. Yu ; Lyutetskii, A. V. ; Nalyot, T. A. ; Pikhtin, N. A. ; Slipchenko, S. O. ; Sokolova, Z. N. ; Fetisova, N. V. ; Tarasov, I. S.

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Diode lasers emitting at 1220 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate

Vinokurov, D. A. ; Kapitonov, V. A. ; Nikolaev, D. N. ; Pikhtin, N. A. ; Stankevich, A. L. ; Shamakhov, V. V. ; Bondarev, A. D. ; Vavilova, L. S. ; Tarasov, I. S.

Dordrecht: SP MAIK Nauka/Interperiodica

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Effect of silicon on relaxation of the crystal lattice in MOCVD–hydride AlxGa1 − xAs:Si/GaAs(100) heterostructures

Seredin, P. V. ; Glotov, A. V. ; Ternovaya, V. E. ; Domashevskaya, E. P. ; Arsentyev, I. N. ; Vinokurov, D. A. ; Stankevich, A. L. ; Tarasov, I. S.

Dordrecht: SP MAIK Nauka/Interperiodica

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High-power laser diodes of wavelength 808 nm based on various types of asymmetric heterostructures with an ultrawide waveguide

Bezotosnyĭ, V. V. ; Vasil’eva, V. V. ; Vinokurov, D. A. ; Kapitonov, V. A. ; Krokhin, O. N. ; Leshko, A. Yu ; Lyutetskiĭ, A. V. ; Murashova, A. V. ; Nalet, T. A. ; Nikolaev, D. N. ; Pikhtin, N. A. ; Popov, Yu. M. ; Slipchenko, S. O. ; Stankevich, A. L. ; Fetisova, N. V. ; Shamakhov, V. V. ; Tarasov, I. S.

Dordrecht: SP MAIK Nauka/Interperiodica

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Saturation of light-current characteristics of high-power laser diodes (λ = 1.0–1.8 μm) under pulse operation

Vinokurov, D. A. ; Kapitonov, V. A. ; Lyutetskiĭ, A. V. ; Pikhtin, N. A. ; Slipchenko, S. O. ; Sokolova, Z. N. ; Stankevich, A. L. ; Khomylev, M. A. ; Shamakhov, V. V. ; Borshchev, K. S. ; Arsent’ev, I. N. ; Tarasov, I. S.

United States

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Study of optical characteristics of structures with strongly strained InxGa1 − xAs quantum wells

Vinokurov, D. A. ; Kapitonov, V. A. ; Nikolaev, D. N. ; Sokolova, Z. N. ; Stankevich, A. L. ; Shamakhov, V. V. ; Tarasov, I. S.

Dordrecht: SP MAIK Nauka/Interperiodica

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Study of optical characteristics of structures with strongly strained In x Ga1 − x As quantum wells

Vinokurov, D. A. ; Kapitonov, V. A. ; Nikolaev, D. N. ; Sokolova, Z. N. ; Stankevich, A. L. ; Shamakhov, V. V. ; Tarasov, I. S.

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