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Resultados de 1 a 10 de 132  para Produção Intelectual da USP

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1
A study on the self-heating effect in deep-submicrometer partially depleted SOI MOSFETs at low temperatures
A study on the self-heating effect in deep-submicrometer partially depleted SOI MOSFETs at low temperatures
Material Type:
Livro 		Adicionar ao Meu Espaço

A study on the self-heating effect in deep-submicrometer partially depleted SOI MOSFETs at low temperatures

Marcelo Antonio Pavanello João Antonio Martino 1959-; Eddy Simoen; A Mercha; Cor Claeys; K De Meyer; International Symposium on Microelectronics Technology and Devices SBMICRO 2003 (18 2003 São Paulo)

Martino J.A. ed ; Pavanello, M.A. ed ; Morimoto, N.I. ed Microelectronic Technology and Devices SBMicro 2003 Pennington : Electrochemical Society, 2003

Pennington Electrochemical Society 2003

Item não circula. Consulte sua biblioteca.(Acessar)

2
Experimental Comparison Between Trigate p-TFET and p-FinFET Analog Performance as a Function of Temperature
Experimental Comparison Between Trigate p-TFET and p-FinFET Analog Performance as a Function of Temperature
Material Type:
Artigo 		Adicionar ao Meu Espaço

Experimental Comparison Between Trigate p-TFET and p-FinFET Analog Performance as a Function of Temperature

Paula Ghedini Der Agopian Eddy Simoen; A Vandooren; Rita Rooyackers; João Antonio Martino 1959-

IEEE Transactions on Electron Devices v. 60, n. 8, p. 2493-2497, Aug. 2013

2013

Item não circula. Consulte sua biblioteca.(Acessar)

3
A novel simple method to extract the effective LDD doping concentration on fully depleted SOI NMOSFET
A novel simple method to extract the effective LDD doping concentration on fully depleted SOI NMOSFET
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

A novel simple method to extract the effective LDD doping concentration on fully depleted SOI NMOSFET

Aparecido Sirley Nicolett João Antonio Martino 1959-; Eddy Simoen; Cor Claeys; International Conference on Microelectronics and Packaging (14. 1999 Campinas)

ICMP 99 : Technical Digest São Paulo : SBMicro/IMAPS, 1999

São Paulo SBMicro/IMAPS 1999

Item não circula. Consulte sua biblioteca.(Acessar)

4
A new technique to extract the oxide charge density at front and back interfaces of SOI nMOSFETs devices
A new technique to extract the oxide charge density at front and back interfaces of SOI nMOSFETs devices
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

A new technique to extract the oxide charge density at front and back interfaces of SOI nMOSFETs devices

Aparecido Sirley Nicolett João Antonio Martino 1959-; Eddy Simoen; Cor Claeys; International Conference on Microelectronics and Packaging (16. 2001 Pirenópolis)

SBMicro 2001: proceedings Brasília : SBMicro, 2001

Brasília SBMicro 2001

Item não circula. Consulte sua biblioteca.(Acessar)

5
A new method to extract the silicon film thickness of enhancement mode fully depleted SOI nMOSFETs
A new method to extract the silicon film thickness of enhancement mode fully depleted SOI nMOSFETs
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

A new method to extract the silicon film thickness of enhancement mode fully depleted SOI nMOSFETs

Aparecido Sirley Nicolett João Antonio Martino 1959-; Eddy Simoen; Cor Claeys; IEEE Latin American Test Workshop (2000 Rio de Janeiro)

LATW 00: proceedings Piscataway : IEEE/SBC, 2000

Piscataway IEEE/SBC 2000

Item não circula. Consulte sua biblioteca.(Acessar)

6
Analog performance of vertical nanowire TFETs as a function of temperature and transport mechanism
Analog performance of vertical nanowire TFETs as a function of temperature and transport mechanism
Material Type:
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Analog performance of vertical nanowire TFETs as a function of temperature and transport mechanism

Márcio Dalla Valle Martino Aaron Thean; Cor Claeys; Felipe S Neves; Paula Ghedini Der Agopian; João Antonio Martino 1959-; A Vandooren; Rita Rooyackers; Eddy Simoen

Solid-State Electronics v. 112, p. 51-55, Oct 2015

2015

Item não circula. Consulte sua biblioteca.(Acessar)

7
A new method to extract the LDD doping concentration on fully depleted SOI nMOSFET at 300 K
A new method to extract the LDD doping concentration on fully depleted SOI nMOSFET at 300 K
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

A new method to extract the LDD doping concentration on fully depleted SOI nMOSFET at 300 K

Aparecido Sirley Nicolett João Antonio Martino 1959-; Eddy Simoen; Cor Claeys; IEEE International Conference on Devices, Circuits and Syems (3. 2000 Cancun)

Proceedings Piscataway : IEEE, 2000

Piscataway IEEE 2000

Item não circula. Consulte sua biblioteca.(Acessar)

8
Impact of the NW-TFET Diameter on the Efficiency and the Intrinsic Voltage Gain From a Conduction Regime Perspective
Impact of the NW-TFET Diameter on the Efficiency and the Intrinsic Voltage Gain From a Conduction Regime Perspective
Material Type:
Artigo 		Adicionar ao Meu Espaço

Impact of the NW-TFET Diameter on the Efficiency and the Intrinsic Voltage Gain From a Conduction Regime Perspective

Caio Cesar Mendes Bordallo Cor Claeys; Aaron Thean; Eddy Simoen; A Vandooren; Rita Rooyackers; Paula Ghedini Der Agopian; Victor de Bodt Sivieri; João Antonio Martino 1959-

IEEE Transactions on Electron Devices v. 63, n. 7, p. 2930-2935, July 2016

2016

Item não circula. Consulte sua biblioteca.(Acessar)

9
Theoretical and experimental study of the front and back interface trap density in accumulation mode SOI MOSFETs at low temperatures
Theoretical and experimental study of the front and back interface trap density in accumulation mode SOI MOSFETs at low temperatures
Material Type:
Livro 		Adicionar ao Meu Espaço

Theoretical and experimental study of the front and back interface trap density in accumulation mode SOI MOSFETs at low temperatures

João Antonio Martino 1959- Eddy Simoen; Cor Claeys

Claeys, C.L.; Raider, S.I.; Brown, W.D.; Kirschman, R.K. Low Temperature Electronics and High Temperature Superconductivity Pennington: The Electrochemical Society, 1995

Pennington The Electrochemical Society 1995

Item não circula. Consulte sua biblioteca.(Acessar)

10
Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K
Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K
Material Type:
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Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K

Welder Fernandes Perina João Antonio Martino 1959-; Eddy Simoen; Uthayasankaran Peralagu; Nadine Collaert; Paula Ghedini Der Agopian; Symposium on Microelectronics Technology and Devices (37th 2023 Rio de Janeiro, RJ, Brazil)

SBMicro [Piscataway, N.J.]: IEEE, 2023

Piscataway, N.J. IEEE 2023

Item não circula. Consulte sua biblioteca.(Acessar)

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Deste Autor:

  1. Martino, J
  2. Simoen, E
  3. Claeys, C
  4. Agopian, P
  5. Collaert, N

Neste Assunto:

  1. Microeletrônica
  2. Transistores
  3. Semicondutores
  4. Circuitos Integrados
  5. Silício

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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