Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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0.13 μm CMOS Traveling-Wave Power Amplifier with On- and Off-Chip Gate-Line TerminationVasjanov, Aleksandr ; Barzdenas, VaidotasElectronics (Basel), 2020-01, Vol.9 (1), p.133 [Periódico revisado por pares]Basel: MDPI AGTexto completo disponível |
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2 |
Material Type: Artigo
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0.2–4.35 GHz highly linear CMOS balun-LNA with substrate noise optimizationHuang, Dong ; Qian, Weiqiang ; Khan, Mehdi ; Diao, Shengxi ; Lin, FujiangAnalog integrated circuits and signal processing, 2015-06, Vol.83 (3), p.285-293 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
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3 |
Material Type: Artigo
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0.25 μm 1.2 MHz BOOST-PFM-CONTINUOUS triple mode LED driver integrated in analog front end IC for portable applicationLi, Hongxing ; Wakimoto, Tsutomu ; Murase, Keita ; Tomiyoshi, KenjiAnalog integrated circuits and signal processing, 2012-09, Vol.72 (3), p.595-603 [Periódico revisado por pares]Boston: Springer USTexto completo disponível |
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4 |
Material Type: Artigo
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A 0.0012 mm[sup.2] 6-bit 700 MS/s 1 mW Calibration-Free Pseudo-Loop-Unrolled SAR ADC in 28 nm CMOSAn, Eun-Ji ; Oh, Dong-RyeolElectronics (Basel), 2022-06, Vol.11 (11) [Periódico revisado por pares]MDPI AGTexto completo disponível |
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5 |
Material Type: Artigo
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A 0.0043-mm2 0.085-μW/MHz Relaxation Oscillator Using Charge-Prestored Asymmetric Swings R-RC NetworkWei, Yuchen ; Yang, Shiheng ; Liu, Yueduo ; Bao, Rongxin ; Zhu, Zihao ; Lin, Jiahui ; Zhang, Zehao ; Chen, Yong ; Yin, Jun ; Mak, Pui-In ; Li, QiangIEEE transactions on very large scale integration (VLSI) systems, 2023-08, Vol.31 (8), p.1248-1252 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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6 |
Material Type: Ata de Congresso
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A 0.084 nJ/b FSK transmitter and 4.8 μW OOK receiver for ISM-band medical sensor networksMoradi, Arash ; Zgaren, Mohamed ; Sawan, Mohamad2013 IEEE 11th International New Circuits and Systems Conference (NEWCAS), 2013, p.1-4IEEETexto completo disponível |
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7 |
Material Type: Artigo
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A 0.1–2.75 GHz high-linear low-noise transconductance amplifier for high-performance multi-standard wireless applicationsGladson, S. Chrisben ; Praveen, R. ; Bhaskar, M.Microsystem technologies : sensors, actuators, systems integration, 2020-07, Vol.26 (7), p.2279-2293 [Periódico revisado por pares]Berlin/Heidelberg: Springer Berlin HeidelbergTexto completo disponível |
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8 |
Material Type: Artigo
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A 0.1-40 GHz broadband MEMS clamped-clamped beam capacitive power sensor based on GaAs technologyHan, Juzheng ; Liao, XiaopingJournal of micromechanics and microengineering, 2014-06, Vol.24 (6), p.65024-7 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
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9 |
Material Type: Artigo
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A 0.1–4 GHz SDR receiver with reconfigurable 10–100 MHz signal bandwidth in 65 nm CMOSZhang, Xinwang ; Chi, Baoyong ; Cao, Meng ; Fu, Ling ; Xia, Zhaokang ; Yin, Yun ; Feng, Hongxing ; Zhang, Xing ; Chiang, Patrick ; Wang, ZhihuaAnalog integrated circuits and signal processing, 2013-12, Vol.77 (3), p.567-582 [Periódico revisado por pares]Boston: Springer USTexto completo disponível |
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10 |
Material Type: Artigo
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A 0.1 to 2.5 GHz logarithmic amplifier for RF detectionMicrowave Journal, 1998-07, Vol.41 (7), p.142-145Dedham: Horizon House Publications, IncTexto completo disponível |