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1
Antiferromagnetism with spin polarization of GaN-based diluted magnetic semiconductors
Antiferromagnetism with spin polarization of GaN-based diluted magnetic semiconductors
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Antiferromagnetism with spin polarization of GaN-based diluted magnetic semiconductors

J P T Santos Guennadii Michailovich Gusev; M Marques; L. K Teles (Lara Kühl); Luiz Guimarães Ferreira

Physical Review B v. 81, n. 8, p. 115209/1-115209/8, 2010

Woodbury 2010

Item não circula. Consulte sua biblioteca.(Acessar)

2
Antiferromagnetism with spin polarization of GaN-based diluted magnetic semiconductors
Antiferromagnetism with spin polarization of GaN-based diluted magnetic semiconductors
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Antiferromagnetism with spin polarization of GaN-based diluted magnetic semiconductors

J P T Santos Guennadii Michailovich Gusev; M Marques; L. K Teles (Lara Kühl); Luiz Guimarães Ferreira

Physical Review B v. 81, n. 8, p. 115209/1-115209/8, 2010

Woodbury 2010

Item não circula. Consulte sua biblioteca.(Acessar)

3
Magnetic properties of GaN/MnxGa1-xN digital heterostructures first-principles and Monte Carlo calculations
Magnetic properties of GaN/MnxGa1-xN digital heterostructures first-principles and Monte Carlo calculations
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Magnetic properties of GaN/MnxGa1-xN digital heterostructures first-principles and Monte Carlo calculations

M Marques FERROMAGNETISMO; L G Ferreira; L. K Teles (Lara Kühl); Luisa Maria Ribeiro Scolfaro; J Furthmuller; F Bechstedt

Physical Review B v. 73, n. 22, p. 224409, 2006

Woodbury 2006

Acesso online

4
Magnetic properties of GaN/MnxGa1-xN digital heterostructures first-principles and Monte Carlo calculations
Magnetic properties of GaN/MnxGa1-xN digital heterostructures first-principles and Monte Carlo calculations
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Magnetic properties of GaN/MnxGa1-xN digital heterostructures first-principles and Monte Carlo calculations

M Marques FERROMAGNETISMO; L G Ferreira; L. K Teles (Lara Kühl); Luisa Maria Ribeiro Scolfaro; J Furthmuller; F Bechstedt

Physical Review B v. 73, n. 22, p. 224409, 2006

Woodbury 2006

Acesso online

5
Theoretical study of strain-induced ordering in cubic 'In IND.X' 'Ga IND.1-X' N epitaxial layers
Theoretical study of strain-induced ordering in cubic 'In IND.X' 'Ga IND.1-X' N epitaxial layers
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Theoretical study of strain-induced ordering in cubic 'In IND.X' 'Ga IND.1-X' N epitaxial layers

L. K. Teles (Lara Kühl) L G Ferreira; Luisa Maria Ribeiro Scolfaro; J. R Leite (José Roberto)

Physical Review B v. 69, n. 24, p. 245317/1-245317/10, 2004

Woodbury 2004

Acesso online

6
Theoretical study of strain-induced ordering in cubic 'In IND.X' 'Ga IND.1-X' N epitaxial layers
Theoretical study of strain-induced ordering in cubic 'In IND.X' 'Ga IND.1-X' N epitaxial layers
Material Type:
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Theoretical study of strain-induced ordering in cubic 'In IND.X' 'Ga IND.1-X' N epitaxial layers

L. K. Teles (Lara Kühl) L G Ferreira; Luisa Maria Ribeiro Scolfaro; J. R Leite (José Roberto)

Physical Review B v. 69, n. 24, p. 245317/1-245317/10, 2004

Woodbury 2004

Acesso online

7
Influence of composition fluctuations and strain on gap bowing in 'In IND.X''Ga IND.1-X'N
Influence of composition fluctuations and strain on gap bowing in 'In IND.X''Ga IND.1-X'N
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Influence of composition fluctuations and strain on gap bowing in 'In IND.X''Ga IND.1-X'N

L. K. Teles (Lara Kühl) J Furthmuller; Luisa Maria Ribeiro Scolfaro; J. R Leite (José Roberto); F Bechstedt

Physical Review B Woodbury v. 63, n. 8, p. 5204/1-5204/5, 2001

Woodbury 2001

Acesso online

8
Influence of composition fluctuations and strain on gap bowing in 'In IND.X''Ga IND.1-X'N
Influence of composition fluctuations and strain on gap bowing in 'In IND.X''Ga IND.1-X'N
Material Type:
Artigo 		Adicionar ao Meu Espaço

Influence of composition fluctuations and strain on gap bowing in 'In IND.X''Ga IND.1-X'N

L. K. Teles (Lara Kühl) J Furthmuller; Luisa Maria Ribeiro Scolfaro; J. R Leite (José Roberto); F Bechstedt

Physical Review B Woodbury v. 63, n. 8, p. 5204/1-5204/5, 2001

Woodbury 2001

Acesso online

9
Structural, electronic, and effective-mass properties of silicon and zinc-blende group-III nitride semiconductor compounds
Structural, electronic, and effective-mass properties of silicon and zinc-blende group-III nitride semiconductor compounds
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Structural, electronic, and effective-mass properties of silicon and zinc-blende group-III nitride semiconductor compounds

L. E. Ramos (Luis Eugênio) L. K Teles (Lara Kühl); Luisa Maria Ribeiro Scolfaro; J L P Castineira; A L Rosa; J. R Leite (José Roberto)

Physical Review B Woodbury v. 63, n. 16, p. 5210/1-5210/10, 2001

Woodbury 2001

Acesso online

10
Structural, electronic, and effective-mass properties of silicon and zinc-blende group-III nitride semiconductor compounds
Structural, electronic, and effective-mass properties of silicon and zinc-blende group-III nitride semiconductor compounds
Material Type:
Artigo 		Adicionar ao Meu Espaço

Structural, electronic, and effective-mass properties of silicon and zinc-blende group-III nitride semiconductor compounds

L. E. Ramos (Luis Eugênio) L. K Teles (Lara Kühl); Luisa Maria Ribeiro Scolfaro; J L P Castineira; A L Rosa; J. R Leite (José Roberto)

Physical Review B Woodbury v. 63, n. 16, p. 5210/1-5210/10, 2001

Woodbury 2001

Acesso online

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Deste Autor:

  1. Teles, L
  2. Scolfaro, L
  3. Leite, J
  4. Bechstedt, F
  5. Ferreira, L

Neste Assunto:

  1. Semicondutores
  2. Estrutura Eletrônica
  3. Matéria Condensada
  4. Ferromagnetismo
  5. Estrutura Atômica (Física Moderna)

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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