Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Ata de Congresso
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Atomistic simulation of a III-V p-i-n junction: Comparison of density functional and tight-binding approachesStokbro, Kurt ; Blom, Anders ; Smidstrup, Soren2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2013, p.380-383IEEESem texto completo |
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2 |
Material Type: Ata de Congresso
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Identification of zirconia and hafnia crystalline phases by optical spectroscopy from first-principlesGunst, Tue ; Stradi, Daniele ; Blom, Anders Attias, André-Jean ; Park, Wounjhang ; Panchapakesan, BalajiSPIE 2020Sem texto completo |
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3 |
Material Type: Ata de Congresso
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First-principles method for the phonon-limited resistivity of metalsGunst, Tue ; Blom, Anders ; Stokbro, Kurt2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2018, p.79-82IEEESem texto completo |
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4 |
Material Type: Ata de Congresso
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Ab initio LCAO hybrid density-functional method for accurate, large-scale electronic structure simulations of semiconductor materials, interfaces and gate stacksKhomyakov, Petr A. ; Wellendorff, Jess ; Palsgaard, Mattias ; Gunst, Tue ; Miyagi, Haruhide ; Verstichel, Brecht ; Corsetti, Fabiano ; Arcisauskaite, Vaida ; Martinez, Umberto ; Blom, Anders ; Smidstrup, Soren2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2021, p.124-127IEEESem texto completo |
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5 |
Material Type: Ata de Congresso
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Atomistic Modeling Of Nanoscale Ferroelectric Capacitors Using a Density Functional Theory And Non-Equilibrium Green's-Function MethodStradi, Daniele ; Vej-Hansen, Ulrik G. ; Khomyakov, Petr A. ; Lee, Maeng-Eun ; Penazzi, Gabriele ; Blom, Anders ; Wellendorff, Jess ; Smidstrup, Soren ; Stokbro, Kurt2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2019, p.1-4IEEESem texto completo |
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6 |
Material Type: Ata de Congresso
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First-principles simulations of nanoscale transistorsBlom, Anders ; Martinez Pozzoni, Umberto ; Markussen, Troels ; Stokbro, Kurt2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2015, p.52-55IEEESem texto completo |
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7 |
Material Type: Ata de Congresso
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Grain boundary scattering in Ru and Cu interconnectsMarkussen, Troels ; Aboud, Shela ; Blom, Anders ; Lanzillo, Nicholas A. ; Gunst, Tue ; Cobb, Jonathan ; Philip, Tim M. ; Robison, Robert R.2020 IEEE International Interconnect Technology Conference (IITC), 2020, p.76-78IEEESem texto completo |
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8 |
Material Type: Ata de Congresso
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First-principles modeling of SiGe alloys and devicesBlom, Anders ; Khomyakov, Petr ; Stradi, Daniele ; Stokbro, Kurt2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO), 2017, p.339-340IEEESem texto completo |
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9 |
Material Type: Ata de Congresso
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Analysis of optimal energy management in smart homes using MPCSundstrom, Christofer ; Jung, Daniel ; Blom, Anders2016 EUROPEAN CONTROL CONFERENCE (ECC), 2016, p.2066-2071IEEETexto completo disponível |
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10 |
Material Type: Ata de Congresso
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Atomistic approach for modeling metal-semiconductor interfacesStradi, Daniele ; Martinez, Umberto ; Blom, Anders ; Brandbyge, Mads ; Stokbro, Kurt2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO), 2016, p.895-898IEEESem texto completo |