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1
Structural and transport properties of Be-doped self-catalysed GaAs nanowires grown by molecular beam epitaxy
Structural and transport properties of Be-doped self-catalysed GaAs nanowires grown by molecular beam epitaxy
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Structural and transport properties of Be-doped self-catalysed GaAs nanowires grown by molecular beam epitaxy

Marcelo Rizzo Piton Eero Koivusalo; Soile Suomalainen; Teemu Hakkarainen; Sérgio Paulo Amaral Souto; Helder Vinícius Avanço Galeti; Donald Lupo; Ariano de Giovanni Rodrigues; Yara Galvao Gobato; Mircea Guina; International Workshop and School - Nanostructures for Photonics (2018 Saint Petersburg, Russia)

Abstracts NSP Saint Petersburg, 2018

Saint Petersburg 2018

Acesso online. A biblioteca também possui exemplares impressos.

2
Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy structural, optical and electrical properties
Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy structural, optical and electrical properties
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy structural, optical and electrical properties

Marcelo Rizzo Piton Eero Koivusalo; Soile Suomalainen; Sérgio Paulo Amaral Souto; Helder Vinícius Avanço Galeti; Donald Lupo; Ariano de Giovanni Rodrigues; Paulo Sérgio Pizani; Yara Galvao Gobato; Mircea Guina; Brazilian MRS Meeting (17. 2018 Natal, RN)

Proceedings Rio de Janeiro: Sociedade Brasileira de Pesquisa em Materiais - SBPMat, 2018

Rio de Janeiro Sociedade Brasileira de Pesquisa em Materiais - SBPMat 2018

Acesso online. A biblioteca também possui exemplares impressos.

3
Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy structural, optical and electrical properties
Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy structural, optical and electrical properties
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy structural, optical and electrical properties

Yara Galvao Gobato Helder Vinícius Avanço Galeti; Marcelo Rizzo Piton; Eero Koivusalo; Soile Suomalainen; Teemu Hakkarainen; Sérgio Paulo Amaral Souto; Ariano de Giovanni Rodrigues; Paulo Sérgio Pizani; Donald Lupo; Mircea Guina; International Conference on the Physics of Semiconductors (34. 2018 Montpellier, France)

Proceedings ICPS Montpellier, 2018

Montpellier 2018

Acesso online. A biblioteca também possui exemplares impressos.

4
Optical properties of Be and Te-doped GaAs nanowires grown by molecular beam epitaxy on Si
Optical properties of Be and Te-doped GaAs nanowires grown by molecular beam epitaxy on Si
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Artigo de Congresso 		Adicionar ao Meu Espaço

Optical properties of Be and Te-doped GaAs nanowires grown by molecular beam epitaxy on Si

Marcelo Rizzo Piton Eero Koivusalo; Teemu Hakkarainen; Soile Suomalainen; Helder Vinícius Avanço Galeti; Sérgio Paulo Amaral Souto; Yara Galvao Gobato; Mircea Guina; Optics & Photonics Days (2017 Oulu, Finland)

Abstracts Oulu, 2017

Oulu 2017

Localização: FZEA - Fac. Zoot. Eng. de Alimentos    (PCD 2017 Opt )(Acessar)

5
Optical and electrical characterization of Te and Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy
Optical and electrical characterization of Te and Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Optical and electrical characterization of Te and Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy

Marcelo Rizzo Piton Eero Koivusalo; Soile Suomalainen; Teemu Hakkarainen; Sérgio Paulo Amaral Souto; Helder Vinícius Avanço Galeti; Andreas Schramm; Yara Galvao Gobato; Mircea Guina; Symposium on Microelectronics Technology and Devices (SBMicro) (32. 2017 Fortaleza, CE, Brazil)

Proceedings Piscataway, NJ : IEEE, 2017

Piscataway, NJ IEEE 2017

Localização: FZEA - Fac. Zoot. Eng. de Alimentos    (PCD 2017 Opt )(Acessar)

6
Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates
Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates
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Artigo 		Adicionar ao Meu Espaço

Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates

G. A. Prando Vanessa Orsi Gordo; J Puustinen; J Hilska; H. M Alghamdi; G Som; M Gunes; M Akyol; Sérgio Paulo Amaral Souto; Ariano de Giovanni Rodrigues; Helder Vinícius Avanço Galeti; M Henini; Yara Galvao Gobato; Mircea Guina

Semiconductor Science and Technology Bristol v. 33, n. 8, p. 1-7, 2018

Bristol 2018

Localização: FZEA - Fac. Zoot. Eng. de Alimentos    (PCD 2018 Exc )(Acessar)

7
Structural and optical properties of n-type and p-type GaAs(1−x)Bix thin films grown by molecular beam epitaxy on (311)B GaAs substrates
Structural and optical properties of n-type and p-type GaAs(1−x)Bix thin films grown by molecular beam epitaxy on (311)B GaAs substrates
Material Type:
Artigo 		Adicionar ao Meu Espaço

Structural and optical properties of n-type and p-type GaAs(1−x)Bix thin films grown by molecular beam epitaxy on (311)B GaAs substrates

Daniele de Souza Sultan Alhassan; Saud Alotaibi; Amra Alhassni; Amjad Almunyif; Hindi Albalawi; Igor P Kazakov; Alexey V Klekovkin; Sergey A ZinovEv; Igor A Likhachev; Elkhan M Pashaev; Sérgio Paulo Amaral Souto; Yara Galvao Gobato; Helder Vinícius Avanço Galeti; Mohamed Henini

Semiconductor Science and Technology Bristol v. 36, n. 7, art. 075018, p. 1-12, 2021

Bristol 2021

Localização: FZEA - Fac. Zoot. Eng. de Alimentos    (PCD 2021 Str )(Acessar)

8
Investigation of the effect of substrate orientation on the structural, electrical and optical properties of n-type GaAs1−xBix layers grown by Molecular Beam Epitaxy
Investigation of the effect of substrate orientation on the structural, electrical and optical properties of n-type GaAs1−xBix layers grown by Molecular Beam Epitaxy
Material Type:
Artigo 		Adicionar ao Meu Espaço

Investigation of the effect of substrate orientation on the structural, electrical and optical properties of n-type GaAs1−xBix layers grown by Molecular Beam Epitaxy

Sultan Alhassan Daniele de Souza; Amra Alhassni; Amjad Almunyif; Saud Alotaibi; Abdulaziz Almalki; Maryam Alhuwayz; Igor P Kazakov; Alexey V Klekovkin; Vladimir I Tsekhosh; Igor A Likhachev; Elkhan M Pashaev; Sérgio Paulo Amaral Souto; Yara Galvao Gobato; N Al Saqri; Helder Vinícius Avanço Galeti; Faisal Al Mashary; Hindi Albalawi; Norah Alwadai; Mohamed Henini

Journal of Alloys and Compounds Amsterdam v. 885, art. 161019, p. 1-11, 2021

Amsterdam 2021

Localização: FZEA - Fac. Zoot. Eng. de Alimentos    (PCD 2021 Inv )(Acessar)

9
Raman spectroscopy of n-type and p-type GaAs(1−x)Bix thin films grown by Molecular Beam Epitaxy on (311)B GaAs substrates
Raman spectroscopy of n-type and p-type GaAs(1−x)Bix thin films grown by Molecular Beam Epitaxy on (311)B GaAs substrates
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Raman spectroscopy of n-type and p-type GaAs(1−x)Bix thin films grown by Molecular Beam Epitaxy on (311)B GaAs substrates

Sérgio Paulo Amaral Souto Daniele de Souza; Sultan Alhassan; Saud Alotaibi; Amra Alhassni; Amjad Almunyif; A Almalki; M Alhuwayz; Igor Kazakov; Alexey V Klekovkin; Sergey A Zinov'ev; Igor A Likhachev; Elkhan. M Pashaev; Yara Galvao Gobato; Helder Vinícius Avanço Galeti; Mohamed Henini; Encontro de Outono (2021 São Paulo, SP)

Anais São Paulo : Sociedade Brasileira de Fisica, 2021

São Paulo Sociedade Brasileira de Fisica 2021

Acesso online. A biblioteca também possui exemplares impressos.

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Deste Autor:

  1. Galeti, H
  2. Gobato, Y
  3. Souto, S
  4. Guina, M
  5. Suomalainen, S

Neste Assunto:

  1. Epitaxia Por Feixe Molecular
  2. Semicondutores
  3. Espectroscopia Raman
  4. Fotoluminescência
  5. Física Óptica

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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