skip to main content
Idioma:
Refinado por: tipo de recurso: Recursos Textuais remover
Result Number Material Type Add to My Shelf Action Record Details and Options
1
Non Linear Piezoelectricity in Wurtzite Semiconductor Core-Shell Nanowires: An Atomistic Modelling Approach
Non Linear Piezoelectricity in Wurtzite Semiconductor Core-Shell Nanowires: An Atomistic Modelling Approach
Material Type:
Recurso Textual 		Adicionar ao Meu Espaço

Non Linear Piezoelectricity in Wurtzite Semiconductor Core-Shell Nanowires: An Atomistic Modelling Approach

Alzahrani, Hanan

2017

Texto completo disponível

Citações Citado por
2
Observation of electronic Raman scattering from Mg-doped wurtzite GaN
Observation of electronic Raman scattering from Mg-doped wurtzite GaN
Material Type:
Recurso Textual 		Adicionar ao Meu Espaço

Observation of electronic Raman scattering from Mg-doped wurtzite GaN

Tsen, K. T ; Koch, C ; Chen, Y ; Morkoç, Hadis ; Li, J ; Lin, J. Y ; Jiang, H. X

VCU Scholars Compass 2000

Texto completo disponível

Citações Citado por
3
Ultrafast decay of hot phonons in an AlGaN/AlN/AlGaN/GaN camelback channel
Ultrafast decay of hot phonons in an AlGaN/AlN/AlGaN/GaN camelback channel
Material Type:
Recurso Textual 		Adicionar ao Meu Espaço

Ultrafast decay of hot phonons in an AlGaN/AlN/AlGaN/GaN camelback channel

Leach, J. H ; Wu, M ; Morkoç, H ; Liberis, J ; Šermukšnis, E ; Ramonas, M ; Matulionis, A

VCU Scholars Compass 2011

Texto completo disponível

Citações Citado por
4
Contactless electroreflectance, in the range of 20 K < T < 300 K, of freestanding wurtzite GaN prepared by hydride-vapor-phase epitaxy
Contactless electroreflectance, in the range of 20 K < T < 300 K, of freestanding wurtzite GaN prepared by hydride-vapor-phase epitaxy
Material Type:
Recurso Textual 		Adicionar ao Meu Espaço

Contactless electroreflectance, in the range of 20 K < T < 300 K, of freestanding wurtzite GaN prepared by hydride-vapor-phase epitaxy

Huang, Y. S ; Pollak, Fred H ; Park, S. S ; Lee, K. Y ; Morkoç, H

VCU Scholars Compass 2003

Texto completo disponível

Citações Citado por
5
Strain induced variations in band offsets and built-in electric fields in InGaN/GaN multiple quantum wells
Strain induced variations in band offsets and built-in electric fields in InGaN/GaN multiple quantum wells
Material Type:
Recurso Textual 		Adicionar ao Meu Espaço

Strain induced variations in band offsets and built-in electric fields in InGaN/GaN multiple quantum wells

Dong, L ; Mantese, J. V ; Avrutin, Vitaliy ; Özgür, Ü ; Morkoç, H ; Alpay, S. P

VCU Scholars Compass 2013

Texto completo disponível

Citações Citado por
6
DISLOCATIONS AND WIDE STACKING FAULTS IN WURTZITE TYPE CRYSTALS - ZINC SULFIDE AND ALUMINIUM NITRIDE. Reprinted from Physica Status Solidi, No. 2-1962
DISLOCATIONS AND WIDE STACKING FAULTS IN WURTZITE TYPE CRYSTALS - ZINC SULFIDE AND ALUMINIUM NITRIDE. Reprinted from Physica Status Solidi, No. 2-1962
Material Type:
Recurso Textual 		Adicionar ao Meu Espaço

DISLOCATIONS AND WIDE STACKING FAULTS IN WURTZITE TYPE CRYSTALS - ZINC SULFIDE AND ALUMINIUM NITRIDE. Reprinted from Physica Status Solidi, No. 2-1962

1963

Texto completo disponível

Citações Citado por
7
Electron drift velocity in lattice-matched AlInN/AlN/GaN channel at high electric fields
Electron drift velocity in lattice-matched AlInN/AlN/GaN channel at high electric fields
Material Type:
Recurso Textual 		Adicionar ao Meu Espaço

Electron drift velocity in lattice-matched AlInN/AlN/GaN channel at high electric fields

Ardaravičius, L ; Ramonas, M ; Liberis, J ; Kiprijanovič, O ; Matulionis, A ; Xie, J ; Wu, M ; Leach, J. H ; Morkoç, H

VCU Scholars Compass 2009

Texto completo disponível

Citações Citado por
8
Effect of ammonia flow rate on impurity incorporation and material properties of Si-doped GaN epitaxial films grown by reactive molecular beam epitaxy
Effect of ammonia flow rate on impurity incorporation and material properties of Si-doped GaN epitaxial films grown by reactive molecular beam epitaxy
Material Type:
Recurso Textual 		Adicionar ao Meu Espaço

Effect of ammonia flow rate on impurity incorporation and material properties of Si-doped GaN epitaxial films grown by reactive molecular beam epitaxy

Kim, Wook ; Botchkarev, A. E ; Morkoç, H ; Fang, Z.-Q ; Look, D. C ; Smith, David J

VCU Scholars Compass 1998

Texto completo disponível

Citações Citado por
9
Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy
Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy
Material Type:
Recurso Textual 		Adicionar ao Meu Espaço

Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy

Huang, D ; Visconti, P ; Jones, K. M ; Reshchikov, Michael A ; Yun, F ; Baski, A. A ; King, T ; Morkoç, Hadis

VCU Scholars Compass 2001

Texto completo disponível

Citações Citado por
10
Unusual luminescence lines in GaN
Unusual luminescence lines in GaN
Material Type:
Recurso Textual 		Adicionar ao Meu Espaço

Unusual luminescence lines in GaN

Reshchikov, M. A ; Huang, D ; Yun, F ; Visconti, P ; He, L ; Morkoç, H ; Jasinski, J ; Liliental-Weber, Z ; Molnar, R. J ; Park, S. S ; Lee, K. Y

VCU Scholars Compass 2003

Texto completo disponível

Citações Citado por

Personalize Seus Resultados

  1. Editar

Refine Search Results

Expandir Meus Resultados

  1.   

Data de Publicação 

De até
Refinar
  1. Antes de2000  (3)
  2. 2000Até2004  (4)
  3. 2005Até2010  (6)
  4. 2011Até2017  (4)
  5. Após 2017  (3)
  6. Mais opções open sub menu

Idioma 

  1. Inglês  (18)
  2. Catalão  (1)
  3. Mais opções open sub menu

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

Buscando em bases de dados remotas. Favor aguardar.