Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Temperature- and Doping-Dependent Anisotropic Stationary Electron Velocity in Wurtzite GaNSridharan, S. ; Christensen, A. ; Venkatachalam, A. ; Graham, S. ; Yoder, P. D.IEEE electron device letters, 2011-11, Vol.32 (11), p.1522-1524 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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Material Type: Artigo
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Theoretical Evaluation of the Effects of Isolation-Feature Size and Geometry on the Built-In Strain and 2-D Electron Gas Density of AlGaN/GaN HeterostructuresGosselin, Jean-Lou ; Valizadeh, PouyaIEEE transactions on electron devices, 2018-11, Vol.65 (11), p.4800-4806 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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Material Type: Artigo
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GaN High Electron Mobility Transistor Simulations With Full Wave and Hot Electron EffectsGrupen, MattIEEE transactions on electron devices, 2016-08, Vol.63 (8), p.3096-3102 [Periódico revisado por pares]New York: IEEETexto completo disponível |
4 |
Material Type: Artigo
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Investigation of self-heating effects in submicrometer GaN/AlGaN HEMTs using an electrothermal Monte Carlo methodSadi, T. ; Kelsall, R.W. ; Pilgrim, N.J.IEEE transactions on electron devices, 2006-12, Vol.53 (12), p.2892-2900 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
5 |
Material Type: Recurso Textual
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Ultrafast decay of hot phonons in an AlGaN/AlN/AlGaN/GaN camelback channelLeach, J. H ; Wu, M ; Morkoç, H ; Liberis, J ; Šermukšnis, E ; Ramonas, M ; Matulionis, AVCU Scholars Compass 2011Texto completo disponível |
6 |
Material Type: Recurso Textual
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Electron drift velocity in lattice-matched AlInN/AlN/GaN channel at high electric fieldsArdaravičius, L ; Ramonas, M ; Liberis, J ; Kiprijanovič, O ; Matulionis, A ; Xie, J ; Wu, M ; Leach, J. H ; Morkoç, HVCU Scholars Compass 2009Texto completo disponível |
7 |
Material Type: Artigo
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GaN Substrates for III-Nitride DevicesPaskova, Tanya ; Hanser, Drew A. ; Evans, Keith R.Proceedings of the IEEE, 2010-07, Vol.98 (7), p.1324-1338 [Periódico revisado por pares]New York: IEEETexto completo disponível |
8 |
Material Type: Artigo
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Importance of the Gate-Dependent Polarization Charge on the Operation of GaN HEMTsAshok, A. ; Vasileska, D. ; Goodnick, S.M. ; Hartin, O.L.IEEE transactions on electron devices, 2009-05, Vol.56 (5), p.998-1006 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
9 |
Material Type: Artigo
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AlGaN/GaN HEMT Degradation: An Electro-Thermo-Mechanical Simulationder Maur, Matthias Auf ; Di Carlo, AldoIEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3142-3148 [Periódico revisado por pares]IEEETexto completo disponível |
10 |
Material Type: Ata de Congresso
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Physics of GaN-based heterostructure field effect transistorsShur, M.S. ; Gaska, R.IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05, 2005, p.4 pp.IEEETexto completo disponível |