Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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0.3 pJ/Bit Machine Learning Resistant Strong PUF Using Subthreshold Voltage Divider ArrayVenkatesh, Abilash ; Venkatasubramaniyan, Aishwarya Bahudhanam ; Xi, Xiaodan ; Sanyal, ArindamIEEE transactions on circuits and systems. II, Express briefs, 2020-08, Vol.67 (8), p.1394-1398 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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2 |
Material Type: Artigo
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0.5-V 4-MB Variation-Aware Cache Architecture Using 7T/14T SRAM and Its Testing SchemeNakata, Yohei ; Okumura, Shunsuke ; Kawaguchi, Hiroshi ; Yoshimoto, MasahikoInformation and Media Technologies, 2012, Vol.7(2), pp.544-555Tokyo: Information and Media Technologies Editorial BoardTexto completo disponível |
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3 |
Material Type: Artigo
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0.77 fJ/bit/search Content Addressable Memory Using Small Match Line Swing and Automated Background Checking Scheme for Variation ToleranceAnh Tuan Do ; Chun Yin ; Velayudhan, Kavitha ; Zhao Chuan Lee ; Kiat Seng Yeo ; Kim, Tony Tae-HyoungIEEE journal of solid-state circuits, 2014-07, Vol.49 (7), p.1487-1498 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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4 |
Material Type: Artigo
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A 0.016 mV/mA Cross-Regulation 5-Output SIMO DC-DC Buck Converter Using Output-Voltage-Aware Charge Control SchemeNgoc-Son Pham ; Taegeun Yoo ; Kim, Tony Tae-Hyoung ; Chan-Gun Lee ; Kwang-Hyun BaekIEEE transactions on power electronics, 2018-11, Vol.33 (11), p.9619-9630 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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5 |
Material Type: Artigo
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A 0.027-mm2 Self-Calibrating Successive Approximation ADC Core in 0.18-.MU.m CMOSKURAMOCHI, Yasuhide ; MATSUZAWA, Akira ; KAWABATA, MasayukiIEICE transactions on fundamentals of electronics, communications and computer sciences, 2009, Vol.E92-A (2), p.360-366 [Periódico revisado por pares]Texto completo disponível |
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6 |
Material Type: Artigo
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A 0.13- \mu \text CMOS Dynamically Reconfigurable Charge Pump for Electrostatic MEMS ActuationAlameh, Abdul Hafiz ; Nabki, FredericIEEE transactions on very large scale integration (VLSI) systems, 2017-04, Vol.25 (4), p.1261-1270 [Periódico revisado por pares]IEEETexto completo disponível |
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7 |
Material Type: Artigo
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A 0.18 m CMOS 3rd-Order Digitally Programmable Gm-C Filter for VHF ApplicationsOTIN, A.IEICE transactions on information and systems, 2005-07, Vol.E88-D (7), p.1509-1510 [Periódico revisado por pares]Texto completo disponível |
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8 |
Material Type: Ata de Congresso
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A 0.3V VDDmin 4+2T SRAM for searching and in-memory computing using 55nm DDC technologyQing Dong ; Jeloka, Supreet ; Saligane, Mehdi ; Yejoong Kim ; Kawaminami, Masaru ; Harada, Akihiko ; Miyoshi, Satoru ; Blaauw, David ; Sylvester, Dennis2017 Symposium on VLSI Circuits, 2017, p.C160-C161JSAPSem texto completo |
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9 |
Material Type: Artigo
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A 0.4-mW, 4.7-ps Resolution Single-Loop TDC Using a Half-Delay Time IntegratorKwon, Chan-Keun ; Kim, Hoonki ; Park, Jongsun ; Kim, Soo-WonIEEE transactions on very large scale integration (VLSI) systems, 2016-03, Vol.24 (3), p.1184-1188 [Periódico revisado por pares]New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)Texto completo disponível |
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10 |
Material Type: Artigo
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A 0.4-V 10.9- \mu W/Pole Third-Order Complex BPF for Low Energy RF ReceiversCompassi-Severo, Lucas ; Van Noije, WilhelmusIEEE transactions on circuits and systems. I, Regular papers, 2019-06, Vol.66 (6), p.2017-2026 [Periódico revisado por pares]IEEETexto completo disponível |