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Resonant tunneling of polarized electrons through nonmagnetic III-V semiconductor multiple barriers

Araújo, C. Moysés ; Silva, A. Ferreira da ; Silva, E. A. de Andrada e

Brazilian journal of physics, 2002-06, Vol.32 (2a), p.321-323 [Periódico revisado por pares]

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Título:
Resonant tunneling of polarized electrons through nonmagnetic III-V semiconductor multiple barriers
Autor: Araújo, C. Moysés ; Silva, A. Ferreira da ; Silva, E. A. de Andrada e
Assuntos: PHYSICS, MULTIDISCIPLINARY
É parte de: Brazilian journal of physics, 2002-06, Vol.32 (2a), p.321-323
Descrição: The quantum transport of spin-polarized electrons across nonmagnetic III-V semiconductor multiple barriers is considered theoretically. We have calculated the spin dependent transmission coeficient, for conducting electrons transversing lattice-matched In0. 53Ga0. 47As/GaAs0. 5Sb0: /In0. 53Ga0. 47As/ InP/In0. 53Ga0. 47As nanostructures with different numbers of asymmetric double barriers, as a function of electron energy and angle of incidence. Spin-orbit split resonances, due to the Rashba term, are observed. The envelope function approximation and the Kane k ·p model for the bulk are used. For an unpolarized incident beam of electrons, we also obtain the spin polarization of the transmitted beam. The formation of spin dependent minibands of energy with nonzero transmission is observed.
Editor: Sociedade Brasileira de Física
Idioma: Inglês;Português

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