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Application of polysiloxane resists to multilayer resists systems for high-resolution microlithography

Rosilio, Charles ; Rosilio, André ; Buiguez, François

Microelectronic engineering, 1983, Vol.1 (3), p.197-208 [Periódico revisado por pares]

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Título:
Application of polysiloxane resists to multilayer resists systems for high-resolution microlithography
Autor: Rosilio, Charles ; Rosilio, André ; Buiguez, François
Assuntos: bi-layer and tri-level systems ; multilayer resist systems ; polysiloxane resists ; reactive ionic etching ; Submicron lithography
É parte de: Microelectronic engineering, 1983, Vol.1 (3), p.197-208
Descrição: This paper describes a multilayer resist system using polysiloxane resists, for use in submicron lithography. The application of this kind of resist to electron beam lithography in a bi-layer system and to direct stepping on wafers in a tri-level resist system has been demonstrated. Steep profile patterns with high-resolution and high-aspect ratio can be obtained with reactive ionic etching techniques associated with conventional lithography techniques.
Editor: Elsevier B.V
Idioma: Inglês

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