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Growth and optical properties of In x Ga1−x P nanowires synthesized by selective-area epitaxy

Berg, Alexander ; Caroff, Philippe ; Shahid, Naeem ; Lockrey, Mark N. ; Yuan, Xiaoming ; Borgström, Magnus T. ; Tan, Hark Hoe ; Jagadish, Chennupati

Nano research, 2017-02, Vol.10 (2), p.672-682 [Periódico revisado por pares]

Beijing: Springer Nature B.V

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Título:
Growth and optical properties of In x Ga1−x P nanowires synthesized by selective-area epitaxy
Autor: Berg, Alexander ; Caroff, Philippe ; Shahid, Naeem ; Lockrey, Mark N. ; Yuan, Xiaoming ; Borgström, Magnus T. ; Tan, Hark Hoe ; Jagadish, Chennupati
Assuntos: Cathodoluminescence ; Crystal defects ; Crystal structure ; Electron microscopy ; Energy transmission ; Epitaxial growth ; Epitaxy ; Metalorganic chemical vapor deposition ; Metals ; Nanotechnology ; Nanowires ; Optical properties ; Photovoltaic cells ; Reproducibility ; Spectroscopy ; Synthesis ; Transmission electron microscopy ; Vapor phase epitaxy ; Wavelengths ; Wurtzite
É parte de: Nano research, 2017-02, Vol.10 (2), p.672-682
Descrição: Ternary III–V nanowires (NWs) cover a wide range of wavelengths in the solar spectrum and would greatly benefit from being synthesized as position-controlled arrays for improved vertical yield, reproducibility, and tunable optical absorption. Here, we report on successful selective-area epitaxy of metal-particle-free vertical InxGa1−xP NW arrays using metal–organic vapor phase epitaxy and detail their optical properties. A systematic growth study establishes the range of suitable growth parameters to obtain uniform NW growth over a large array. The optical properties of the NWs were characterized by room-temperature cathodoluminescence spectroscopy. Tunability of the emission wavelength from 870 nm to approximately 800 nm was achieved. Transmission electron microscopy and energy dispersive X-ray measurements performed on cross-section samples revealed a pure wurtzite crystal structure with very few stacking faults and a slight composition gradient along the NW growth axis.
Editor: Beijing: Springer Nature B.V
Idioma: Inglês

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Growth and optical properties of In x Ga1−x P nanowires synthesized by selective-area epitaxy

Berg, Alexander ; Caroff, Philippe ; Shahid, Naeem ; Lockrey, Mark N. ; Yuan, Xiaoming ; Borgström, Magnus T. ; Tan, Hark Hoe ; Jagadish, Chennupati

Beijing: Springer Nature B.V

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