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Toward a Germanium Laser for Integrated Silicon Photonics

Xiaochen Sun ; Jifeng Liu ; Kimerling, L.C. ; Michel, J.

IEEE journal of selected topics in quantum electronics, 2010-01, Vol.16 (1), p.124-131 [Periódico revisado por pares]

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Título:
Toward a Germanium Laser for Integrated Silicon Photonics
Autor: Xiaochen Sun ; Jifeng Liu ; Kimerling, L.C. ; Michel, J.
Assuntos: Band theory ; Capacitive sensors ; Doping ; Gain ; Germanium ; Guidelines ; Heterojunctions ; Integrated optoelectronics ; Laser theory ; light emitters ; Light emitting diodes ; Optical fiber communication ; Photonic band gap ; Silicon ; silicon photonics ; Strain ; Temperature
É parte de: IEEE journal of selected topics in quantum electronics, 2010-01, Vol.16 (1), p.124-131
Notas: ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
Descrição: It has been demonstrated theoretically and experimentally that germanium, with proper strain engineering and n-type doping, can be an efficient light emitter and a gain medium at its direct bandgap within the third optical communication window ( ~1520-1620 nm). In this paper, we systematically discuss the effect of strain, doping, and temperature on the direct-gap optical gain in germanium. For electrically pumped devices, properties and design guidelines of Ge/Si heterojunction are also analyzed and compared with the results from fabricated Ge/Si heterojunction LEDs.
Editor: New York: IEEE
Idioma: Inglês

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