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Modeling and simulation of insulated-gate field-effect transistor switching circuits

Shichman, H. ; Hodges, D.A.

IEEE journal of solid-state circuits, 1968-09, Vol.3 (3), p.285-289 [Periódico revisado por pares]

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Título:
Modeling and simulation of insulated-gate field-effect transistor switching circuits
Autor: Shichman, H. ; Hodges, D.A.
Assuntos: Application software ; Application specific integrated circuits ; Circuit simulation ; Computational modeling ; Computer aided analysis ; Computer simulation ; Equivalent circuits ; FETs ; Insulation ; Switching circuits
É parte de: IEEE journal of solid-state circuits, 1968-09, Vol.3 (3), p.285-289
Notas: ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
Descrição: A new equivalent circuit for the insulated-gate field-effect transistor (IGFET) is described. This device model is particularly useful for computer-aided analysis of monolithic integrated IGFET switching circuits. The results of computer simulations using the new equivalent circuit are in close agreement with experimental observations. As an example of a practical application, simulation results are shown for an integrated circuit IGFET memory cell.
Editor: IEEE
Idioma: Inglês

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