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InGaAs/GaAs quantum well lasers grown on exact GaP/Si (001)

Huang, Xue ; Song, Yuncheng ; Masuda, Taizo ; Jung, Daehwan ; Lee, Minjoo

Electronics letters, 2014-08, Vol.50 (17), p.1226-1227 [Periódico revisado por pares]

Stevenage: The Institution of Engineering and Technology

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Título:
InGaAs/GaAs quantum well lasers grown on exact GaP/Si (001)
Autor: Huang, Xue ; Song, Yuncheng ; Masuda, Taizo ; Jung, Daehwan ; Lee, Minjoo
Assuntos: Density ; elemental semiconductors ; epitaxial GaP‐Si template ; Exact sciences and technology ; Fundamental areas of phenomenology (including applications) ; Gallium arsenide ; Gallium arsenides ; gallium compounds ; GaP‐Si ; indium compounds ; InGaAs‐GaAs ; Lasers ; Optics ; Photonics ; Physics ; pulsed mode ; Quantum well lasers ; red shift ; ridge lasers ; room temperature ; Semiconductor lasers; laser diodes ; semiconductor quantum wells ; Silicon ; Silicon substrates ; size 1.2 mm ; size 80 mum ; thermal mismatch ; threshold current densities ; Threshold currents ; wavelength 1030 nm ; wavelength 1043 nm
É parte de: Electronics letters, 2014-08, Vol.50 (17), p.1226-1227
Notas: ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
Descrição: InGaAs/GaAs strained quantum well lasers on both GaP and exact Si (001) via an epitaxial GaP/Si template are developed. Ridge lasers of length 1.2 mm and width 80 µm on GaP and GaP/Si templates show threshold current densities of 1.6 and 5.6 kA/cm2, respectively, in pulsed mode at room temperature. The emission wavelength of 1043 nm for lasers on GaP/Si was red shifted from 1030 nm for lasers on GaP and GaAs, due to the thermal mismatch with the Si substrate.
Editor: Stevenage: The Institution of Engineering and Technology
Idioma: Inglês

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InGaAs/GaAs quantum well lasers grown on exact GaP/Si (001)

Huang, Xue ; Song, Yuncheng ; Masuda, Taizo ; Jung, Daehwan ; Lee, Minjoo

Stevenage: The Institution of Engineering and Technology

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