Temperature measurement in AlGaN/GaN High-Electron-Mobility Transistors using micro-Raman scattering spectroscopy
Aubry, R. ; Dua, C. ; Jacquet, J.-C. ; Lemaire, F. ; Galtier, P. ; Dessertenne, B. ; Cordier, Y. ; DiForte-Poisson, M.-A. ; Delage, S. L.
European physical journal. Applied physics, 2005-05, Vol.30 (2), p.77-82 [Periódico revisado por pares]Les Ulis: EDP Sciences
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