Idioma:

MICROWAVE DIELECTRIC PROPERTIES OF Mn:BST AND PST THIN-FILMS

SUBRAMANYAM, GURU ; CHEN, CHONGLIN ; DEY, SANDWIP

Integrated ferroelectrics, 2005-12, Vol.77 (1), p.189-197 [Periódico revisado por pares]

Texto completo disponível

Citações Citado por

Título:
MICROWAVE DIELECTRIC PROPERTIES OF Mn:BST AND PST THIN-FILMS
Autor: SUBRAMANYAM, GURU ; CHEN, CHONGLIN ; DEY, SANDWIP
Assuntos: BST thin-films ; ferroelectric thin-films ; Microwave dielectrics ; PST thin-films
É parte de: Integrated ferroelectrics, 2005-12, Vol.77 (1), p.189-197
Notas: SourceType-Scholarly Journals-2
ObjectType-Feature-2
ObjectType-Conference Paper-1
content type line 23
SourceType-Conference Papers & Proceedings-1
ObjectType-Article-3
Descrição: In this study, we characterized nano-structured Mn doped BST thin-films fabricated using a pulsed laser deposition process at the University of Houston, and PST thin-films fabricated using MOCVD at the Arizona State University. Coplanar waveguide test structures were used for experimental evaluation of the dielectric properties of the BST and PST thin-films fabricated on MgO and saphire substrates respectively. The test structures were fabricated on bare substrates as well as on the thin-film test samples for determination of attenuation and phase constants with and without the ferroelectric thin-films. The ϵ film for the Mn:BST film was approximately 1200 over the frequency range of 15-30 GHz with the loss-tangent averaging to 0.033. The PST thin-film on sapphire substrate had a zero-bias relative dielectric constant of 200 and the loss-tangent was estimated to be 0.05 over the measured frequency range of 10 to 18 GHz.
Editor: Taylor & Francis Group
Idioma: Inglês

Voltar para lista de resultados