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Tunable Bandgap of LuxIn1-xO Ternary Alloy for Solar-blind Ultraviolet Detection

Zhang, Dan ; Liang, Jiarong ; Luo, Zhiyuan ; Wang, Zhao ; Liu, Yanghui ; Zheng, Wei

IEEE electron device letters, 2024-02, Vol.45 (2), p.1-1 [Periódico revisado por pares]

New York: IEEE

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Título:
Tunable Bandgap of LuxIn1-xO Ternary Alloy for Solar-blind Ultraviolet Detection
Autor: Zhang, Dan ; Liang, Jiarong ; Luo, Zhiyuan ; Wang, Zhao ; Liu, Yanghui ; Zheng, Wei
Assuntos: band engineering ; Detectors ; Energy gap ; In<; sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">; 2 O<; sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">; 3 ; Indium oxides ; Lu<; sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">; 2 O<; sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">; 3 ; Magnetron sputtering ; Performance evaluation ; Photodetectors ; Photonic band gap ; photovoltaic photodetector ; Photovoltaic systems ; Semiconductor device reliability ; solar blind ultraviolet ; Ternary alloys
É parte de: IEEE electron device letters, 2024-02, Vol.45 (2), p.1-1
Descrição: In this study, Lu atoms are incorporated into In 2 O 3 lattice by magnetron co-sputtering, expanding the bandgap of Lu x In 1-x O (0 < x < 1) to the solar-blind ultraviolet (SBUV) region. Based on the Lu 0.39 In 0.61 O film with a bandgap of 5.2 eV, a Pt/Lu 0.39 In 0.61 O/GaN device with stable and reliable detection performance to SBUV is fabricated. Under 0 V bias, the detector shows a maximum photoresponsivity of 0.81 mA/W under 255 nm irradiation, an SBUV-visible rejection ratio (R 255 nm /R 400 nm ) of 318, and a decay time of 0.56 s. Compared with Au/Lu 0.39 In 0.61 O/GaN device, this detector has a larger short-circuit current, a higher open-circuit voltage, and a lower dark current density. The Schottky junction between the Lu0.39In0.61O film and the Pt electrode is regarded as a key factor for the reliable optoelectronic performance exhibited by the device at 0 V bias. This work is significant in extending the application of Lu x In 1-x O ternary alloy in SBUV detection.
Editor: New York: IEEE
Idioma: Inglês

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Tunable Bandgap of LuxIn1-xO Ternary Alloy for Solar-blind Ultraviolet Detection

Zhang, Dan ; Liang, Jiarong ; Luo, Zhiyuan ; Wang, Zhao ; Liu, Yanghui ; Zheng, Wei

New York: IEEE

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