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Characterization of AlGaN/GaN and AlGaN/AlN/GaN HEMTs in terms of mobility and subthreshold slope

Prasad, Santashraya ; Dwivedi, Amit Krishna ; Islam, Aminul

Journal of computational electronics, 2016-03, Vol.15 (1), p.172-180 [Periódico revisado por pares]

New York: Springer US

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Título:
Characterization of AlGaN/GaN and AlGaN/AlN/GaN HEMTs in terms of mobility and subthreshold slope
Autor: Prasad, Santashraya ; Dwivedi, Amit Krishna ; Islam, Aminul
Assuntos: Aluminum gallium nitrides ; Aluminum nitride ; Current carriers ; Efficiency ; Electrical Engineering ; Electron gas ; Electronics ; Electrons ; Engineering ; Gallium nitrides ; High electron mobility transistors ; Mathematical and Computational Engineering ; Mathematical and Computational Physics ; Mechanical Engineering ; Optical and Electronic Materials ; Semiconductor devices ; Semiconductors ; Simulation ; Slopes ; Spacers ; Theoretical ; Transconductance ; Transistors
É parte de: Journal of computational electronics, 2016-03, Vol.15 (1), p.172-180
Notas: ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
Descrição: This paper presents two structures of wide band gap high electron mobility transistor (HEMT). One structure is made-up of a stack of AlGaN layer over GaN layer. This structure is characterized by two-dimensional (2-D) electron gas layer formed at the interface of the AlGaN and GaN layers. The 2-D electron gas plays an important role in determining the carrier-mobility ( μ ) and hence drain-to-source current ( I DS ) of HEMT. The other structure introduces an AlN spacer layer between the AlGaN and GaN layers to improve these characteristics. This paper compares the output characteristics curves ( I DS - V DS ) and transconductance characteristics curves ( I DS - V GS ) obtained from simulations performed using Silvaco ATLAS TM . The modified structure with spacer layer shows improvements in carrier-mobility and hence drain-to-source current. This paper estimates and compares the subthreshold slope (SS) of the two devices. AlGaN/AlN/GaN HEMT offers an SS of 80 mV/decade whereas AlGaN/GaN HEMT offers an SS of 95 mV/decade. Thus, an improvement in SS of about 18.75 % is achieved in AlGaN/AlN/GaN HEMT compared to AlGaN/GaN HEMT. HEMT with spacer layer also offers 10 × improvement in I D S as compared to HEMT without spacer layer. The proposed HEMTs achieve ≈ 3.19 × improvement in breakdown voltage, > 1.3 × improvement in SS compared to HEMTs previously proposed in the literature.
Editor: New York: Springer US
Idioma: Inglês

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Characterization of AlGaN/GaN and AlGaN/AlN/GaN HEMTs in terms of mobility and subthreshold slope

Prasad, Santashraya ; Dwivedi, Amit Krishna ; Islam, Aminul

New York: Springer US

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