Performance improvement of 1.3 μm InAlGaAs MQW modulators grown by MOVPE using C-doped InAl(Ga)As cladding layers

Kobayashi, W. ; Ueda, Y. ; Shindo, T. ; Mitsuhara, M. ; Nakajima, F.

Journal of crystal growth, 2024-10, Vol.643, p.127813, Article 127813 [Periódico revisado por pares]

Elsevier B.V

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