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0.45-V 5.4-nW switched-capacitor bandgap reference with intermittent operation and improved supply immunity

Luo, Ziyang ; Lu, Yan ; Martins, Rui P

Electronics letters, 2018-10, Vol.54 (20), p.1154-1156 [Periódico revisado por pares]

The Institution of Engineering and Technology

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Título:
0.45-V 5.4-nW switched-capacitor bandgap reference with intermittent operation and improved supply immunity
Autor: Luo, Ziyang ; Lu, Yan ; Martins, Rui P
Assuntos: active‐idle duty ratio ; area‐consuming resistors ; BGRs ; charge pump circuits ; Circuits and systems ; CMOS integrated circuits ; constant bias currents ; cross‐coupled 2X charge pumps ; improved supply immunity ; load variations ; low supply voltages ; low‐leakage sample and hold circuit ; low‐power electronics ; open‐loop charge pumps ; output ripples ; power 5.4 nW ; power consumption ; reference circuits ; sample and hold circuits ; size 65.0 nm ; standard CMOS ; supply sensitivity reduction ; switched capacitor networks ; switched‐capacitor bandgap reference ; temperature coefficient ; ultra‐low power applications ; voltage 0.45 V ; voltage doubler charge pumps ; voltage multipliers
É parte de: Electronics letters, 2018-10, Vol.54 (20), p.1154-1156
Notas: Rui P. Martins: Also with Instituto Superior Técnico (on leave), Universidade de Lisboa, Portugal
Ziyang Luo: Also with ECE Department, University of Texas at Dallas, Texas, USA
Descrição: Switched-capacitor networks have been used as bandgap references (BGRs) to replace the area-consuming resistors in ultra-low power applications, incorporated with voltage doubler (2X) charge pumps to operate at low supply voltages. However, the open-loop charge pumps are sensitive to supply and load variations. Therefore, in this work, constant bias currents are added to the cross-coupled 2X charge pumps to reduce the supply sensitivity, and also to reduce the output ripples without using large capacitors. To further reduce the power consumption, a low-leakage sample and hold (S&H) circuit is used for an intermittent operation, the active/idle duty ratio of the BGR core is 1/15. Designed in standard 65 nm CMOS, the proposed BGR reaches a temperature coefficient of 64 ppm/°C consuming only 5.4 nW with a minimum supply of 0.45 V (simulated).
Editor: The Institution of Engineering and Technology
Idioma: Inglês

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0.45-V 5.4-nW switched-capacitor bandgap reference with intermittent operation and improved supply immunity

Luo, Ziyang ; Lu, Yan ; Martins, Rui P

The Institution of Engineering and Technology

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