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2,7-Diphenyl[1]benzoselenopheno[3,2-b][1]benzoselenophene as a Stable Organic Semiconductor for a High-Performance Field-Effect Transistor

Takimiya, Kazuo ; Kunugi, Yoshihito ; Konda, Yasushi ; Ebata, Hideaki ; Toyoshima, Yuta ; Otsubo, Tetsuo

Journal of the American Chemical Society, 2006-03, Vol.128 (9), p.3044-3050 [Periódico revisado por pares]

Washington, DC: American Chemical Society

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  • Título:
    2,7-Diphenyl[1]benzoselenopheno[3,2-b][1]benzoselenophene as a Stable Organic Semiconductor for a High-Performance Field-Effect Transistor
  • Autor: Takimiya, Kazuo ; Kunugi, Yoshihito ; Konda, Yasushi ; Ebata, Hideaki ; Toyoshima, Yuta ; Otsubo, Tetsuo
  • Assuntos: Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Conductivity of specific materials ; Electronic transport in condensed matter ; Exact sciences and technology ; Physics ; Polymers; organic compounds (including organic semiconductors)
  • É parte de: Journal of the American Chemical Society, 2006-03, Vol.128 (9), p.3044-3050
  • Notas: istex:675441FB91B52197BC247CD4A531FA1A0DE0E8F2
    ark:/67375/TPS-1VPTHXFG-7
    ObjectType-Article-1
    SourceType-Scholarly Journals-1
    ObjectType-Feature-2
    content type line 23
  • Descrição: [1]Benzoselenopheno[3,2-b][1]benzoselenophene (BSBS) and its 2,7-diphenyl derivative (DPh-BSBS) were readily synthesized from diphenylacetylene and bis(biphenyl-4-yl)acetylene, respectively, with a newly developed straightforward selenocyclization protocol. In contrast to the parent BSBS that has poor film-forming properties, the diphenyl derivative DPh-BSBS formed a good thin film on the Si/SiO2 substrate by vapor deposition. X-ray diffraction examination revealed that this film consists of highly ordered molecules that are nearly perpendicular to the substrate, making it suitable for use in the fabrication of organic field-effect transistors (OFETs). When fabricated at different substrate temperatures (room temperature, 60 °C, and 100 °C) in a “top-contact” configuration, all the DPh-BSBS-based OFET devices exhibited excellent p-channel field-effect properties with hole mobilities >0.1 cm2 V-1 s-1 and current on/off ratios of ∼106. This high performance was essentially maintained over 3000 continuous scans between V g = +20 and −100 V and reproduced even after storage under ambient laboratory conditions for at least one year.
  • Editor: Washington, DC: American Chemical Society
  • Idioma: Inglês
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